APT50M50L2LLG

APT50M50L2LL 500V 89A 0.050Ω R POWER MOS 7 MOSFET TO-264 Max ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Increased Power Dissipation • Easier To Drive • Lower Gate Charge, Qg • Popular TO-264 MAX Package MAXIMUM RATINGS Symbol VDSS ID D G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT50M50L2LL UNIT 500 Volts Drain-Source Voltage 89 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 893 Watts Linear Derating Factor 7.14 W/°C PD TJ,TSTG 356 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS 1 -55 to 150 °C 300 Amps 89 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts 50 4 mJ 3200 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 500 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, 44.5A) TYP MAX Volts 0.050 Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA) 3 Downloaded from Elcodis.com electronic components distributor Ohms µA ±100 nA 5 Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 2-2004 Characteristic / Test Conditions 050-7043 Rev C Symbol APT50M50L2LL DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic MIN TYP Ciss Input Capacitance Coss Output Capacitance VDS = 25V 2060 Crss Reverse Transfer Capacitance f = 1 MHz 105 VGS = 10V 200 VDD = 250V 50 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) ID = 89A @ 25°C tf 22 VDD = 250V ID = 89A @ 25°C Turn-off Delay Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 8 INDUCTIVE SWITCHING @ 25°C 6 1490 VDD = 333V, VGS = 15V ID = 89A, RG = 3Ω 1650 INDUCTIVE SWITCHING @ 125°C 6 ns 56 RG = 0.6Ω Fall Time nC 24 VGS = 15V Rise Time td(off) pF 105 RESISTIVE SWITCHING Turn-on Delay Time tr UNIT 10550 VGS = 0V 3 MAX µJ 2105 VDD = 333V, VGS = 15V ID = 89A, RG = 3Ω 1835 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN Characteristic / Test Conditions TYP MAX 89 UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -89A, dl S/dt = 100A/µs) 680 ns Q rr Reverse Recovery Charge (IS = -89A, dl S/dt = 100A/µs) 17.0 µC dv/ Peak Diode Recovery dt dv/ 356 (Body Diode) 1.3 (VGS = 0V, IS = - 89A) dt 5 Amps Volts 8 V/ns MAX UNIT THERMAL CHARACTERISTICS Symbol MIN Characteristic RθJC Junction to Case RθJA Junction to Ambient TYP 0.14 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 0.81mH, RG = 25Ω, Peak IL = 89A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -89A di/dt ≤ 700A/µs VR ≤ 500V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.14 0.9 0.12 0.7 0.08 Note: 0.5 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7043 Rev C 2-2004 0.16 0.10 0.06 0.3 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.1 0.05 0 10-5 t1 t2 0.04 0.02 SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Downloaded from Elcodis.com electronic components distributor °C/W 40 1.0 Typical Performance Curves APT50M50L2LL 200 15 &10V 7.5V RC MODEL Junction temp. (°C) 0.0622 0.0191F Power (watts) 0.0778 0.209F ID, DRAIN CURRENT (AMPERES) 180 160 7V 140 120 6.5V 100 80 6V 60 40 5.5V 20 Case temperature. (°C) 5V FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 180 VDS> ID (ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @