APT50M65B2FLLG

APT50M65B2FLL APT50M65LFLL 500V 67A 0.065Ω POWER MOS 7 R FREDFET B2FLL T-MaxTM ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg VDSS ID LFLL D • Increased Power Dissipation • Easier To Drive • Popular T-MAX™ or TO-264 Package MAXIMUM RATINGS Symbol TO-264 G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT50M65B2FLL_LFLL UNIT 500 Volts Drain-Source Voltage 67 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 694 Watts Linear Derating Factor 5.5 W/°C PD TJ,TSTG 268 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 1 Volts -55 to 150 °C 300 Amps 67 (Repetitive and Non-Repetitive) 1 50 4 mJ 3000 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 500 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, 33.5A) TYP MAX UNIT Volts 0.065 Ohms Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com µA 12-2003 Characteristic / Test Conditions 050-7031 Rev C Symbol DYNAMIC CHARACTERISTICS Symbol APT50M65 B2FLL - LFLL Characteristic Input Capacitance VGS = 0V Coss Output Capacitance VDS = 25V C rss 3 Total Gate Charge Qgs Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time ID = 67A @ 25°C RESISTIVE SWITCHING VGS = 15V Rise Time td(off) VDD = 250V Turn-off Delay Time tf ID = 67A @ 25°C Fall Time Turn-on Switching Energy Eoff Turn-off Switching Energy INDUCTIVE SWITCHING @ 25°C 6 Turn-on Switching Energy Eoff Turn-off Switching Energy 6 ns 1035 VDD = 333V, VGS = 15V Eon nC 30 RG = 0.6Ω Eon UNIT pF 87 141 40 70 12 28 29 VGS = 10V Qgd MAX 7010 1390 VDD = 250V Gate-Source Charge tr TYP f = 1 MHz Reverse Transfer Capacitance Qg MIN Test Conditions Ciss ID = 67A, RG = 3Ω 845 INDUCTIVE SWITCHING @ 125°C 1556 VDD = 333V VGS = 15V ID = 67A, RG = 3Ω µJ 1013 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD dv/ Characteristic / Test Conditions MIN TYP 67 Continuous Source Current (Body Diode) Amps Pulsed Source Current (Body Diode) 268 Diode Forward Voltage 2 (VGS = 0V, IS = -67A) 1.3 Volts 15 V/ns dv/ dt 5 Reverse Recovery Time (IS = -67A, di/dt = 100A/µs) Tj = 25°C 270 Tj = 125°C 540 Q rr Reverse Recovery Charge (IS = -67A, di/dt = 100A/µs) Tj = 25°C 2.6 Tj = 125°C 9.6 IRRM Peak Recovery Current (IS = -67A, di/dt = 100A/µs) Tj = 25°C 17 Tj = 125°C 31 t rr UNIT 1 Peak Diode Recovery dt MAX ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP MAX 0.18 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.9 0.16 0.7 0.12 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7031 Rev C 12-2003 0.20 0.08 0.3 t2 0.1 0 t1 Duty Factor D = t1/t2 0.04 SINGLE PULSE 0.05 10-5 10-4 °C/W 4 Starting Tj = +25°C, L = 1.34mH, RG = 25Ω, Peak IL = 67A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -67A di/dt ≤ 700A/µs VR ≤ 500V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.5 UNIT Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves APT50M65B2FLL - LFLL 180 15 &10V 0.0271 Power (Watts) 0.0656 0.0860 0.00899F 0.0202F 0.293F ID, DRAIN CURRENT (AMPERES) RC MODEL Junction temp. ( ”C) Case temperature 160 140 120 7V 100 6.5V 80 60 6V 40 5.5V 20 5V 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 140 120 100 80 60 TJ = +125°C 40 TJ = +25°C 20 TJ = -55°C 0 1 2 3 4 5 6 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 60 50 40 30 20 10 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 25 1.3 1.2 1.1 VGS=10V 1.00 VGS=20V 0.90 0.80 0 10 20 30 40 50 60 70 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 2.5 1.05 1.00 0.95 0.90 0.85 -50 1.2 I = 33.5A V = 10V D GS 2.0 1.5 1.0 0.5 0.0 -50 1.10 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) NORMALIZED TO = 10V @ 33.5A GS 1.15 70 0 V 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 12-2003 0 1.4 050-7031 Rev C ID, DRAIN CURRENT (AMPERES) 160 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @