APT50M75B2FLLG

APT50M75B2FLL APT50M75LFLL 500V 57A 0.075Ω POWER MOS 7 R FREDFET B2FLL ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg VDSS ID TO-264 LFLL • Increased Power Dissipation • Easier To Drive • Popular T-MAX™ or TO-264 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol T-MAX™ D G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT50M75B2FLL_LFLL UNIT 500 Volts Drain-Source Voltage 57 Continuous Drain Current @ TC = 25°C Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 570 Watts Linear Derating Factor 4.56 W/°C PD TJ,TSTG 1 228 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS 1 -55 to 150 °C 300 Amps 57 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts 50 4 mJ 2500 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 500 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 28.5A) TYP MAX UNIT Volts 0.075 Ohms Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Downloaded from Elcodis.com electronic components distributor µA 9-2004 Characteristic / Test Conditions 050-7033 Rev C Symbol APT50M75B2FLL_LFLL DYNAMIC CHARACTERISTICS Symbol Characteristic C iss Test Conditions Input Capacitance Coss VGS = 0V Output Capacitance VDS = 25V C rss Reverse Transfer Capacitance f = 1 MHz Qg 3 Total Gate Charge Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time RESISTIVE SWITCHING VGS = 15V VDD = 300V tf ID = 57A @ 25°C Fall Time Turn-on Switching Energy Eoff Turn-off Switching Energy 6 Eon Turn-on Switching Energy Eoff Turn-off Switching Energy INDUCTIVE SWITCHING @ 25°C ns 755 VDD = 333V, VGS = 15V 725 ID = 57A, RG = 5Ω 6 nC 3 RG = 0.6Ω Eon UNIT pF 85 125 33 65 8 19 21 ID = 57A @ 25°C Turn-off Delay Time MAX 5590 1180 VDD = 300V Rise Time td(off) TYP VGS = 10V Qgs tr MIN INDUCTIVE SWITCHING @ 125°C µJ 1240 VDD = 333V VGS = 15V ID = 57A, RG = 5Ω 845 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 (Body Diode) 228 VSD Diode Forward Voltage 2 (VGS = 0V, IS = -57A) 1.3 Volts dv/ Peak Diode Recovery 15 V/ns dt dv/ dt 57 5 t rr Reverse Recovery Time (IS = -57A, di/dt = 100A/µs) Tj = 25°C 280 Tj = 125°C 600 Q rr Reverse Recovery Charge (IS = -57A, di/dt = 100A/µs) Tj = 25°C 1.9 Tj = 125°C 5.7 IRRM Peak Recovery Current (IS = -57A, di/dt = 100A/µs) Tj = 25°C 15 Tj = 125°C 23 Amps ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX 0.22 RθJC Junction to Case RθJA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.9 0.7 0.15 0.5 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7033 Rev C 9-2004 0.25 0.1 0.3 Duty Factor D = t1/t2 0.1 0.05 0 t1 t2 0.05 10-5 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Downloaded from Elcodis.com electronic components distributor °C/W 4 Starting Tj = +25°C, L = 1.54mH, RG = 25Ω, Peak IL = 57A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID57A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.2 UNIT 1.0 Typical Performance Curves 8V 15 &10V RC MODEL Power (watts) 0.0144 0.00575F 0.0763 0.0186F 0.130 0.278F ID, DRAIN CURRENT (AMPERES) Junction temp. (°C) APT50M75B2FLL_LFLL 120 7.5V 100 7V 80 60 6.5V 40 6V 20 5.5V Case temperature. (°C) 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 160 VDS> ID (ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @