APT50M75JFLL

APT50M75JFLL 500V POWER MOS 7 R 51A FREDFET 0.075Ω S S 27 ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg VDSS SO "UL Recognized" ISOTOP ® • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol 2 T- D G D G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT50M75JFLL UNIT 500 Volts Drain-Source Voltage ID Continuous Drain Current @ TC = 25°C IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 460 Watts Linear Derating Factor 3.68 W/°C PD TJ,TSTG 1 Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy 1 Amps 204 TL EAS 51 -55 to 150 °C 300 Amps 51 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts 50 4 mJ 2500 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 500 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 25.5A) TYP MAX UNIT Volts 0.075 Ohms Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Downloaded from Elcodis.com electronic components distributor µA 9-2004 Characteristic / Test Conditions 050-7034 Rev D Symbol APT50M75JFLL DYNAMIC CHARACTERISTICS Symbol Characteristic Ciss Test Conditions Input Capacitance Coss VGS = 0V Output Capacitance VDS = 25V Crss Reverse Transfer Capacitance f = 1 MHz Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr 3 RESISTIVE SWITCHING VGS = 15V VDD = 300V ID = 51A @ 25°C Turn-on Switching Energy Eoff Turn-off Switching Energy 6 Eon Turn-on Switching Energy Eoff Turn-off Switching Energy INDUCTIVE SWITCHING @ 25°C ns 675 VDD = 333V, VGS = 15V 650 ID = 51A, RG = 5Ω 6 nC 3 RG = 0.6Ω Eon UNIT pF 85 125 33 65 8 17 21 VDD = 300V Fall Time MAX 5590 1180 ID = 51A @ 25°C Turn-off Delay Time tf TYP VGS = 10V Rise Time td(off) MIN INDUCTIVE SWITCHING @ 125°C µJ 1110 VDD = 333V VGS = 15V 755 ID = 51A, RG = 5Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 (Body Diode) 228 VSD Diode Forward Voltage 2 (VGS = 0V, IS = -51A) 1.3 Volts 15 V/ns dv/ dt Peak Diode Recovery dv/ dt 51 5 t rr Reverse Recovery Time (IS = -51A, di/dt = 100A/µs) Tj = 25°C 280 Tj = 125°C 600 Q rr Reverse Recovery Charge (IS = -51A, di/dt = 100A/µs) Tj = 25°C 1.9 Tj = 125°C 5.7 IRRM Peak Recovery Current (IS = -51A, di/dt = 100A/µs) Tj = 25°C 15 Tj = 125°C 23 Amps ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX 0.27 RθJC Junction to Case RθJA Junction to Ambient 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 40 0.20 0.7 0.15 0.5 Note: 0.10 0.3 t1 t2 0.05 0 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7034 Rev D 9-2004 0.30 0.9 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.1 0.05 10-5 SINGLE PULSE 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10-4 Downloaded from Elcodis.com electronic components distributor °C/W 4 Starting Tj = +25°C, L = 1.92mH, RG = 25Ω, Peak IL = 51A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID51A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.25 UNIT 1.0 Typical Performance Curves APT50M75JFLL 120 8V 15 &10V Junction temp. (°C) Power (watts) 0.0409 0.0246F 0.255 0.406F 0.00361 148F ID, DRAIN CURRENT (AMPERES) RC MODEL 7.5V 100 7V 80 60 6.5V 40 6V 20 5.5V Case temperature. (°C) FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 160 VDS> ID (ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @