APT50M75JLL

APT50M75JLL 500V POWER MOS 7 R MOSFET ® VDSS 27 2 T- D G SO "UL Recognized" ISOTOP ® D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS Symbol S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg 51A 0.075Ω G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT50M75JLL UNIT 500 Volts Drain-Source Voltage ID Continuous Drain Current @ TC = 25°C IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 460 Watts Linear Derating Factor 3.68 W/°C PD TJ,TSTG 1 Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy 1 Amps 204 TL EAS 51 -55 to 150 °C 300 Amps 51 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts 50 4 mJ 2500 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 500 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 25.5A) TYP MAX Volts 0.075 Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) Downloaded from Elcodis.com electronic components distributor Ohms µA ±100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 9-2004 Characteristic / Test Conditions 050-7001 Rev E Symbol DYNAMIC CHARACTERISTICS Symbol APT50M75JLL Test Conditions Characteristic MIN TYP Ciss Input Capacitance Coss Output Capacitance VDS = 25V 1180 Reverse Transfer Capacitance f = 1 MHz 85 VGS = 10V 125 VDD = 250V 33 Crss Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) ID = 51A @ 25°C tr td(off) tf 17 VDD = 250V RG = 0.6Ω Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 6 6 ns 21 ID = 51A @ 25°C Turn-off Delay Time nC 8 VGS = 15V Rise Time pF 65 RESISTIVE SWITCHING Turn-on Delay Time UNIT 5590 VGS = 0V 3 MAX 3 INDUCTIVE SWITCHING @ 25°C 675 VDD = 333V, VGS = 15V ID = 51A, RG = 5Ω 650 INDUCTIVE SWITCHING @ 125°C 1110 VDD = 333V VGS = 15V ID = 51A, RG = 5Ω µJ 755 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN Characteristic / Test Conditions IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 TYP 51 228 (Body Diode) 1.3 (VGS = 0V, IS = -51A) t rr Reverse Recovery Time (IS = -51A, dl S/dt = 100A/µs) 655 Q rr Reverse Recovery Charge (IS = -51A, dlS /dt = 100A/µs) 13.5 dv/ Peak Diode Recovery dt dv/ dt MAX 5 UNIT Amps Volts ns µC 8 V/ns MAX UNIT THERMAL CHARACTERISTICS Symbol Characteristic RθJC Junction to Case RθJA Junction to Ambient 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 MIN TYP 0.27 40 4 Starting Tj = +25°C, L = 1.92mH, RG = 25Ω, Peak IL = 51A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID51A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.9 0.20 0.7 0.15 0.5 0.10 0.3 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7001 Rev E 9-2004 0.30 0.25 t1 t2 0.05 0 0.1 0.05 10-5 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Downloaded from Elcodis.com electronic components distributor °C/W 1.0 Typical Performance Curves APT50M75 JLL 120 8V 15 &10V Junction temp. (°C) Power (watts) 0.0409 0.0246F 0.255 0.406F 0.00361 148F ID, DRAIN CURRENT (AMPERES) RC MODEL 7.5V 100 7V 80 60 6.5V 40 6V 20 5.5V Case temperature. (°C) FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 160 VDS> ID (ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @