APT50M75JLLU2
ISOTOP® Boost chopper
MOSFET Power Module
K
D
G
S
K
S
D
G
VDSS = 500V
RDSon = 75mΩ max @ Tj = 25°C
ID = 51A @ Tc = 25°C
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
• Brake switch
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• ISOTOP® Package (SOT-227)
• Very low stray inductance
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Very rugged
• Low profile
• RoHS Compliant
ISOTOP
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
IFA V
IFRMS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Maximum Average Forward Current
Duty cycle=0.5
RMS Forward Current (Square wave, 50% duty)
Tc = 25°C
Tc = 80°C
Max ratings
500
51
39
204
±30
75
290
51
50
2500
30
39
Unit
V
A
V
mΩ
W
A
June, 2006
Symbol
VDSS
mJ
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
www.microsemi.com
1–8
APT50M75JLLU2 – Rev 1
Absolute maximum ratings
APT50M75JLLU2
All ratings @ Tj = 25°C unless otherwise specified
IDSS
RDS(on)
VGS(th)
IGSS
Characteristic
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Tf
Rise Time
Turn-off Delay Time
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Test Conditions
VGS = 0V,VDS = 500V
VGS = 0V,VDS = 400V
Min
Typ
Tj = 25°C
Tj = 125°C
VGS = 10V, ID = 25.5A
VGS = VDS, ID = 1mA
VGS = ±20 V, VDS = 0V
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 250V
ID = 51A
Resistive Switching
VGS = 15V
VBus = 250V
ID = 51A
R G = 0.6Ω
3
Min
Typ
5590
1180
85
123
33
Max
100
500
75
5
±100
Unit
Max
Unit
µA
mΩ
V
nA
pF
nC
65
10
20
21
ns
5
Inductive switching @ 25°C
VGS = 15V, VBus = 330V
ID = 51A, R G = 5Ω
755
Inductive switching @ 125°C
VGS = 15V, VBus = 330V
ID = 51A, R G = 5Ω
1241
726
846
µJ
µJ
June, 2006
Symbol
www.microsemi.com
2–8
APT50M75JLLU2 – Rev 1
Electrical Characteristics
APT50M75JLLU2
Chopper diode ratings and characteristics
Symbol
VF
Characteristic
Diode Forward Voltage
IRM
Maximum Reverse Leakage Current
CT
Junction Capacitance
Reverse Recovery Time
trr
Test Conditions
IF = 30A
IF = 60A
IF = 30A
VR = 600V
VR = 600V
VR = 200V
IF=1A,VR=30V
di/dt =100A/µs
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
23
IF = 30A
VR = 400V
di/dt =200A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
85
160
4
8
130
700
70
1300
30
Reverse Recovery Time
IRRM
Maximum Reverse Recovery Current
Qrr
Reverse Recovery Charge
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
IRRM
IF = 30A
VR = 400V
di/dt =1000A/µs
Min
Junction to Case Thermal Resistance
RthJA
VISOL
TJ,TSTG
TL
Torque
Wt
Junction to Ambient (IGBT & Diode)
250
500
Tj = 125°C
Characteristic
RthJC
Max
1.8
44
Thermal and package characteristics
Symbol
Typ
1.6
1.9
1.4
Min
Typ
MOSFET
Diode
RMS Isolation Voltage, any terminal to case t =1 min, I isol
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