APT50M75LLLG

APT50M75B2LL APT50M75LLL 500V 57A 0.075Ω POWER MOS 7 R MOSFET B2LL ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg VDSS ID TO-264 LLL D • Increased Power Dissipation • Easier To Drive • Popular T-MAX™ or TO-264 Package MAXIMUM RATINGS Symbol T-MAX™ G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT50M75B2LL_LLL UNIT 500 Volts Drain-Source Voltage 57 Continuous Drain Current @ TC = 25°C Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 570 Watts Linear Derating Factor 4.56 W/°C PD TJ,TSTG 1 228 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS 1 -55 to 150 °C 300 Amps 57 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts 50 4 mJ 2500 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 500 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 28.5A) TYP MAX Volts 0.075 Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 3 Downloaded from Elcodis.com electronic components distributor Ohms µA ±100 nA 5 Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 9-2004 Characteristic / Test Conditions 050-7000 Rev D Symbol APT50M75B2LL_LLL DYNAMIC CHARACTERISTICS Test Conditions Characteristic Symbol MIN TYP Ciss Input Capacitance Coss Output Capacitance VDS = 25V 1180 Reverse Transfer Capacitance f = 1 MHz 85 VGS = 10V 125 VDD = 250V 33 Crss Qg Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) ID = 57A @ 25°C tr td(off) tf 19 VDD = 250V RG = 0.6Ω Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 6 6 ns 21 ID = 57A @ 25°C Turn-off Delay Time nC 8 VGS = 15V Rise Time pF 65 RESISTIVE SWITCHING Turn-on Delay Time UNIT 5590 VGS = 0V 3 Total Gate Charge MAX 3 INDUCTIVE SWITCHING @ 25°C 755 VDD = 333V, VGS = 15V ID = 57A, RG = 5Ω 725 INDUCTIVE SWITCHING @ 125°C 1240 VDD = 333V VGS = 15V ID = 57A, RG = 5Ω µJ 845 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN Characteristic / Test Conditions TYP MAX 57 UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -57A, dl S/dt = 100A/µs) 655 ns Q rr Reverse Recovery Charge (IS = -57A, dlS /dt = 100A/µs) 13.5 µC dv/ Peak Diode Recovery dt 228 (Body Diode) 1.3 (VGS = 0V, IS = -57A) dv/ 5 dt Amps Volts 8 V/ns MAX UNIT THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP 0.22 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 1.54mH, RG = 25Ω, Peak IL = 57A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID57A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.9 0.7 0.15 0.5 Note: 0.1 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7000 Rev D 9-2004 0.25 0.2 0.3 Duty Factor D = t1/t2 0.1 0.05 0 t1 t2 0.05 10-5 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Downloaded from Elcodis.com electronic components distributor °C/W 1.0 Typical Performance Curves 8V 15 &10V RC MODEL Power (watts) 0.0144 0.00575F 0.0763 0.0186F 0.130 0.278F ID, DRAIN CURRENT (AMPERES) Junction temp. (°C) APT50M75B2LL_LLL 120 7.5V 100 7V 80 60 6.5V 40 6V 20 5.5V Case temperature. (°C) 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS VDS> ID (ON) x RDS(ON) MAX. 250 µSEC. PULSE TEST @