APT50M85JVR
50A 0.085Ω
Ω
500V
POWER MOS V ®
S
S
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
27
2
T-
D
G
SO
"UL Recongnized"
file # 145592
• Faster Switching
• 100% Avalanche Tested
• Lower Leakage
• Popular SOT-227 Package
ISOTOP fi
D
G
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with
two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT50M85JVR
UNIT
500
Volts
Drain-Source Voltage
50
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
500
Watts
4
W/°C
VGSM
PD
TJ,TSTG
200
Linear Derating Factor
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
1
30
1
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
EAR
Volts
Amps
30
4
mJ
1300
STATIC ELECTRICAL CHARACTERISTICS
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
500
Volts
50
Amps
On State Drain Current
2
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
(VGS = 10V, 0.5 ID[Cont.])
MAX
0.085
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
50
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Ohms
µA
±100
nA
4
Volts
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
UNIT
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
TYP
050-5535 Rev B 6-2006
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT50M85JVR
Characteristic
Test Conditions
MIN
TYP
MAX
Ciss
Input Capacitance
VGS = 0V
9000
10800
Coss
Output Capacitance
VDS = 25V
1240
1740
Reverse Transfer Capacitance
f = 1 MHz
500
750
Crss
Qg
Total Gate Charge
Qgs
3
VGS = 10V
390
535
VDD = 0.5 VDSS
42
65
ID = 0.5 ID[Cont.] @ 25°C
170
255
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
VGS = 15V
15
30
VDD = 0.5 VDSS
17
34
ID = ID[Cont.] @ 25°C
52
80
RG = 0.6Ω
7
14
TYP
MAX
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
Characteristic / Test Conditions
MIN
50
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
200
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -ID[Cont.])
1.3
t rr
Reverse Recovery Time (IS = -ID[Cont.], dl S /dt = 100A/µs)
Q rr
Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/µs)
UNIT
Amps
Volts
690
ns
18
µC
THERMAL / PACKAGE CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
VIsolation
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Torque
Maximum Torque for Device Mounting Screws and Electrical Terminations.
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
TYP
MAX
UNIT
0.25
40
°C/W
2500
Volts
13
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 2.89mH, R = 25Ω, Peak I = 30A
j
G
L
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
D=0.5
0.1
0.2
0.05
0.1
0.05
0.01
0.005
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-5535 Rev B 6-2006
0.3
0.02
0.01
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
lb•in
APT50M85JVR
150
VGS=7V, 10V & 15V
120
6V
90
5.5V
60
5V
30
4.5V
ID, DRAIN CURRENT (AMPERES)
TJ = +25°C
120
TJ = +125°C
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@
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