APT50N60JCCU2

APT50N60JCCU2 ISOTOP® Boost chopper VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 50A @ Tc = 25°C Super Junction MOSFET Power Module Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch K D Features • G - S D ID IDM VGS RDSon PD IAR EAR EAS • • • ISOTOP® Package (SOT-227) Very low stray inductance High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant Absolute maximum ratings Symbol VDSS SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 600 50 38 130 ±20 45 290 15 3 1900 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. www.microsemi.com 1-4 APT50N60JCCU2 – Rev 3 October, 2012 G • K S Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated APT50N60JCCU2 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Test Conditions Min Zero Gate Voltage Drain Current VGS = 0V,VDS = 600V Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Typ Tj = 25°C Tj = 125°C VGS = 0V,VDS = 600V VGS = 10V, ID = 22.5A VGS = VDS, ID = 3mA VGS = ±20 V, VDS = 0V 2.1 40 3 Max 250 500 45 3.9 100 Unit Max Unit µA mΩ V nA Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Tf Test Conditions VGS = 0V ; VDS = 25V f = 1MHz Fall Time Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge nF 34 nC 51 30 Tj=25°C VGS = 10V VBus = 400V ID = 44A RG = 3.3Ω Turn-off Delay Time Typ 6.8 0.32 150 VGS = 10V VBus = 300V ID = 44A Rise Time Eon Min 20 ns 100 20 Tj=25°C VGS = 10V ; VBus = 400V ID = 44A ; RG = 3.3Ω Tj=125°C VGS = 10V ; VBus = 400V ID = 44A ; RG = 3.3Ω 405 µJ 520 660 µJ 635 VGS = 0V, IS = - 44A IS = - 44A Tj = 25°C VR = 400V Tj = 25°C diS/dt = 100A/µs 0.9 1.2 V 600 ns 17 µC SiC chopper diode ratings and characteristics Test Conditions IRM Maximum Reverse Leakage Current VR=600V IF(AV) Maximum Average Forward Current 50% duty cycle Min 600 Tj = 25°C Tj = 175°C Tc = 125°C Tj = 25°C Tj = 175°C Typ Max 100 200 20 1.6 2 400 2000 VF Diode Forward Voltage IF = 20A QC Total Capacitive Charge IF = 20A, VR = 300V di/dt =800A/µs 28 Q Total Capacitance f = 1MHz, VR = 200V 130 f = 1MHz, VR = 400V 100 www.microsemi.com Unit V µA A 1.8 2.4 V nC pF 2-4 APT50N60JCCU2 – Rev 3 October, 2012 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APT50N60JCCU2 Thermal and package characteristics Symbol Characteristic Min RthJC Junction to Case Thermal Resistance RthJA VISOL TJ,TSTG TL Torque Wt Junction to Ambient (IGBT & Diode) Typ CoolMos SiC Diode RMS Isolation Voltage, any terminal to case t =1 min, I isol