APT58M50JU3

APT58M50JU3 ISOTOP® Buck chopper MOSFET Power Module VDSS = 500V RDSon = 65mΩ Max @ Tj = 25°C ID = 58A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • • • A Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant A S D G Power MOS 8™ MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged ISOTOP® Package (SOT-227) Very low stray inductance High level of integration ISOTOP® Absolute maximum ratings ID IDM VGS RDSon PD IAR Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25°C Max ratings 500 58 43 270 ±30 65 543 42 Unit V A V mΩ W A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com Downloaded from Elcodis.com electronic components distributor 1-5 APT58M50JU3 – Rev 0 August, 2009 Symbol VDSS APT58M50JU3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Test Conditions Tj = 25°C VDS = 500V VGS = 0V Tj = 125°C VGS = 10V, ID = 42A VGS = VDS, ID = 2.5mA VGS = ±30 V Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Min 3 Typ 4 Max 250 1000 65 5 ±100 Unit Max Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 250V ID = 42A Td(on) Turn-on Delay Time Tr Td(off) Tf Min Turn-off Delay Time Fall Time pF 340 nC 75 155 60 Resistive switching @ 25°C VGS = 15V VBus = 333V ID = 42A RG = 2.2Ω Rise Time Typ 10800 1164 148 70 ns 155 50 Chopper diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current Test Conditions VR=600V DC Forward Current IF = 30A IF = 60A IF = 30A Diode Forward Voltage trr Reverse Recovery Time IF = 30A VR = 400V Qrr Reverse Recovery Charge di/dt =200A/µs Min 600 Tj = 25°C Tj = 125°C Tc = 90°C Typ Max 25 500 Tj = 125°C Tj = 25°C 30 1.8 2.2 1.5 25 Tj = 125°C 160 Tj = 25°C 35 Tj = 125°C 480 Unit V µA A 2.2 V ns nC Thermal and package characteristics RthJC RthJA VISOL TJ,TSTG TL Torque Wt Min Junction to Case Thermal Resistance Typ Mosfet Diode Junction to Ambient (IGBT & Diode) RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 100 TJ=125°C 75 50 25 TJ=25°C 0.5 0 25 50 75 100 125 150 0 1 TJ, Junction Temperature (°C) Gate Charge vs Gate to Source 3 4 5 6 C, Capacitance (pF) VDS=250V 8 VDS=400V 6 7 Capacitance vs Drain to Source Voltage 100000 VDS=100V ID=42A TJ=25°C 10 2 VGS, Gate to Source Voltage (V) 12 VGS, Gate to Source Voltage 10 4 Ciss 10000 1000 Coss Crss 100 2 10 0 0 60 120 180 240 300 360 50 100 150 200 VDS, Drain to Source Voltage (V) Gate Charge (nC) www.microsemi.com Downloaded from Elcodis.com electronic components distributor 0 4-5 APT58M50JU3 – Rev 0 August, 2009 ID, Drain Current (A) VGS=10V 200 APT58M50JU3 Typical Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.2 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage Trr vs. Current Rate of Charge 175 trr, Reverse Recovery Time (ns) IF, Forward Current (A) 120 100 80 TJ=125°C 60 40 20 TJ=25°C 0 0.0 0.5 1.0 1.5 2.0 2.5 TJ=125°C VR=400V 150 125 60 A 100 30 A 75 15 A 50 3.0 0 200 60 A 1.0 30 A 15 A 0.5 0.0 0 200 400 600 800 600 1000 1200 1000 1200 30 TJ=125°C VR=400V 25 60 A 20 15 30 A 15 A 10 5 0 0 200 -diF/dt (A/µs) 400 600 800 1000 1200 -diF/dt (A/µs) Capacitance vs. Reverse Voltage Max. Average Forward Current vs. Case Temp. 50 200 Duty Cycle = 0.5 TJ=175°C 175 40 150 IF(AV) (A) C, Capacitance (pF) 800 IRRM vs. Current Rate of Charge IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (µC) QRR vs. Current Rate Charge 1.5 TJ=125°C VR=400V 400 -diF/dt (A/µs) VF, Anode to Cathode Voltage (V) 125 100 75 50 30 20 10 0 0 1 10 100 1000 VR, Reverse Voltage (V) 25 50 75 100 125 150 175 Case Temperature (°C) ISOTOP® is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com Downloaded from Elcodis.com electronic components distributor 5-5 APT58M50JU3 – Rev 0 August, 2009 25