APT6010B2FLLG

600V 54A APT6010B2FLL APT6010LFLL APT6010B2FLL* APT6010LFLLG* *G POWER MOS 7 R Denotes RoHS Compliant, Pb Free Terminal Finish. FREDFET B2FLL T-MAX™ ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with Microsemi's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg TO-264 LFLL • Increased Power Dissipation • Easier To Drive • Popular T-MAX™ or TO-264 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol 0.100Ω Ω D G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT6010B2_LFLL UNIT Drain-Source Voltage 600 Volts ID Continuous Drain Current @ TC = 25°C 54 IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 690 Watts Linear Derating Factor 5.52 W/°C VDSS PD TJ,TSTG 1 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS 1 Amps 216 -55 to 150 °C 300 Amps 54 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts 50 4 mJ 3000 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 600 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 27A) TYP MAX Volts 0.100 Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C) 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) Downloaded from Elcodis.com electronic components distributor Ohms µA ±100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com UNIT 6-2006 Characteristic / Test Conditions 050-7062 Rev D Symbol APT6010B2_LFLL DYNAMIC CHARACTERISTICS Symbol Characteristic Ciss Input Capacitance Coss VGS = 0V Output Capacitance VDS = 25V Crss Reverse Transfer Capacitance f = 1 MHz Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time tr 3 RESISTIVE SWITCHING VGS = 15V VDD = 300V ID = 54A@ 25°C Turn-on Switching Energy Eoff Turn-off Switching Energy INDUCTIVE SWITCHING @ 25°C 6 Eon Turn-on Switching Energy Eoff Turn-off Switching Energy ns 885 VDD = 400V, VGS = 15V 970 ID = 54A, RG = 5Ω INDUCTIVE SWITCHING @ 125°C 6 nC 9 RG = 0.6Ω Eon UNIT pF 90 150 30 75 12 19 34 VDD = 300V Fall Time MAX 6710 1250 ID = 54A @ 25°C Turn-off Delay Time tf TYP VGS = 10V Rise Time td(off) MIN Test Conditions µJ 1150 VDD = 400V VGS = 15V ID = 54A, RG = 5Ω 1220 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 (Body Diode) 216 VSD Diode Forward Voltage 2 (VGS = 0V, IS = -54A) 1.3 Volts 15 V/ns dv/ Peak Diode Recovery dt dv/ dt 54 5 t rr Reverse Recovery Time (IS = -54A, di/dt = 100A/µs) Tj = 25°C 300 Tj = 125°C 600 Q rr Reverse Recovery Charge (IS = -54A, di/dt = 100A/µs) Tj = 25°C 2.7 Tj = 125°C 7.8 IRRM Peak Recovery Current (IS = -54A, di/dt = 100A/µs) Tj = 25°C 14 Tj = 125°C 20 Amps ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX 0.18 RθJC Junction to Case RθJA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 D = 0.9 0.7 0.12 0.5 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7062 Rev D 6-2006 0.20 0.08 0.3 t2 0.1 0 SINGLE PULSE 0.05 10-5 t1 Duty Factor D = t1/t2 0.04 10-4 Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Downloaded from Elcodis.com electronic components distributor °C/W 4 Starting Tj = +25°C, L = 2.06mH, RG = 25Ω, Peak IL = 54A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID54A di/dt ≤ 700A/µs VR ≤ 600V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. Microsemi reserves the right to change, without notice, the specifications and inforation contained herein. 0.16 UNIT 1.0 Typical Performance Curves 0.859 0.009 0.0202 0.293 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 160 VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @