APT6010B2LLG

Ω 0.100Ω 600V 54A APT6010B2LL APT6010LLL APT6010B2LL* APT6010LLLG* *G POWER MOS 7 R Denotes RoHS Compliant, Pb Free Terminal Finish. MOSFET B2LL ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with Microsemi's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg VDSS ID TO-264 LLL D • Increased Power Dissipation • Easier To Drive • Popular T-MAX™ or TO-264 Package MAXIMUM RATINGS Symbol T-MAX™ G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT6010B2_LLL UNIT 600 Volts Drain-Source Voltage 54 Continuous Drain Current @ TC = 25°C Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 690 Watts Linear Derating Factor 5.52 W/°C PD TJ,TSTG 1 216 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS 1 -55 to 150 °C 300 Amps 54 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts 50 4 mJ 3000 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 600 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 27A) TYP MAX Volts 0.100 Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C) 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) Downloaded from Elcodis.com electronic components distributor Ohms µA ±100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com UNIT 6-2006 Characteristic / Test Conditions 050-7051 Rev F Symbol DYNAMIC CHARACTERISTICS APT6010B2_LLL Test Conditions Characteristic Symbol MIN TYP Ciss Input Capacitance Coss Output Capacitance VDS = 25V 1250 Reverse Transfer Capacitance f = 1 MHz 90 VGS = 10V 150 VDD = 300V 30 Crss Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr ID = 54A @ 25°C td(off) tf 19 VDD = 300V RG = 0.6Ω Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 9 INDUCTIVE SWITCHING @ 25°C 6 885 VDD = 400V, VGS = 15V 6 ns 34 ID = 54A @ 25°C Fall Time nC 12 VGS = 15V Turn-off Delay Time pF 75 RESISTIVE SWITCHING Rise Time UNIT 6710 VGS = 0V 3 MAX ID = 54A, RG = 5Ω 970 INDUCTIVE SWITCHING @ 125°C 1150 VDD = 400V VGS = 15V ID = 54A, RG = 5Ω µJ 1220 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS Characteristic / Test Conditions MIN TYP MAX 54 Continuous Source Current (Body Diode) UNIT Amps ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -54A, dl S/dt = 100A/µs) 790 ns Q rr Reverse Recovery Charge (IS = -54A, dl S/dt = 100A/µs) 18 µC dv/ Peak Diode Recovery dt dv/ 216 (Body Diode) 1.3 (VGS = 0V, IS = - 54A) dt 5 Volts 8 V/ns MAX UNIT THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP 0.18 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 2.06mH, RG = 25Ω, Peak IL = 54A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID54A di/dt ≤ 700A/µs VR ≤ 600V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. Microsemi reserves the right to change, without notice, the specifications and inforation contained herein. D = 0.9 0.7 0.12 0.5 Note: 0.08 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7051 Rev F 6-2006 0.20 0.16 0.3 t2 0.1 0 SINGLE PULSE 0.05 10-5 t1 Duty Factor D = t1/t2 0.04 10-4 Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Downloaded from Elcodis.com electronic components distributor °C/W 1.0 Typical Performance Curves 0.859 0.009 0.0202 0.293 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @