APT6011B2VRG

APT6011B2VR APT6011LVR 600V 49A POWER MOS V ® MOSFET B2VR T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • TO-264 MAX Package 0.110Ω TO-264 LVR • Avalanche Energy Rated D • Faster Switching • Lower Leakage G S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT6011B2VR_LVR UNIT 600 Volts Drain-Source Voltage 49 Continuous Drain Current @ TC = 25°C Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 625 Watts Linear Derating Factor 5.00 W/°C PD TJ,TSTG 1 196 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR EAS 1 -55 to 150 Amps 49 1 Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Volts 50 4 mJ 3000 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 600 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 24.5A) TYP MAX Volts 0.110 Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C) 250 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 2 Downloaded from Elcodis.com electronic components distributor Ohms µA ±100 nA 4 Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 5-2004 Characteristic / Test Conditions 050-8059 Rev A Symbol DYNAMIC CHARACTERISTICS Symbol APT6011B2VR_LVR MIN Test Conditions Characteristic TYP Ciss Input Capacitance Coss VGS = 0V Output Capacitance VDS = 25V 1100 Crss Reverse Transfer Capacitance f = 1 MHz 500 VGS = 10V 450 VDD = 300V 50 ID = 49A @ 25°C 200 Qg Total Gate Charge Qgs 3 Gate-Source Charge Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time VGS = 15V 17 Rise Time VDD = 300V 16 ID = 49A @ 25°C 65 RG = 0.6Ω 6 td(off) Turn-off Delay Time tf Fall Time UNIT 8900 Qgd tr MAX pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN Characteristic / Test Conditions TYP MAX 49 UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -49A, dl S /dt = 100A/µs) 760 ns Q rr Reverse Recovery Charge (IS = -49A, dl S /dt = 100A/µs) 18.4 µC dv/ Peak Diode Recovery dt dv/ 196 (Body Diode) 1.3 (VGS = 0V, IS = -49A) dt 5 Amps Volts 8 V/ns MAX UNIT THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP 0.20 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 2.50mH, RG = 25Ω, Peak IL = 49A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID49A di/dt ≤ 700A/µs VR ≤600V TJ ≤ 150°C APT Reserves the right to change, without notice, the specifications and information contained herein. 0.9 0.15 0.7 Note: 0.5 0.10 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-8059 Rev A 5-2004 0.25 0.20 0.3 t2 0.1 0 SINGLE PULSE 0.05 10-5 t1 Duty Factor D = t1/t2 0.05 10-4 Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Downloaded from Elcodis.com electronic components distributor °C/W 1.0 Typical Performance Curves APT6011B2VR_LVR 120 Junction temp. (°C) RC MODEL 0.0302 Power (watts) 0.0729 0.0955 0.00809F 0.0182F 0.264F ID, DRAIN CURRENT (AMPERES) VGS =15 &10 V Case temperature. (°C) 5V 40 4.5V 20 FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 120 1.40 VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @