APT6029BFLLG

APT6029BFLL APT6029SFLL 600V 21A 0.290Ω POWER MOS 7 R FREDFET BFLL D3PAK ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg SFLL • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol TO-247 D G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT6029BFLL_SFLL UNIT Drain-Source Voltage 600 Volts ID Continuous Drain Current @ TC = 25°C 21 IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 300 Watts Linear Derating Factor 2.40 W/°C VDSS PD TJ,TSTG 1 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS 1 Amps 84 -55 to 150 °C 300 Amps 21 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts 30 4 mJ 1210 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 600 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 10.5A) TYP MAX UNIT Volts 0.290 Ohms Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 1mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com µA 9-2004 Characteristic / Test Conditions 050-7133 Rev C Symbol APT6029BFLL_SFLL DYNAMIC CHARACTERISTICS Symbol Characteristic Ciss Input Capacitance Coss VGS = 0V Output Capacitance VDS = 25V Crss Reverse Transfer Capacitance f = 1 MHz Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time tr 3 RESISTIVE SWITCHING VGS = 15V VDD = 300V ID = 21A @ 25°C RG = 1.6Ω 4 INDUCTIVE SWITCHING @ 25°C Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 6 225 Eon Turn-on Switching Energy Eoff Turn-off Switching Energy VDD = 400V, VGS = 15V nC ns 90 ID = 21A, RG = 5Ω 6 INDUCTIVE SWITCHING @ 125°C µJ 360 VDD = 400V, VGS = 15V ID = 21A, RG = 5Ω UNIT pF 47 65 13 36 9 5 23 VDD = 300V Fall Time MAX 2615 420 ID = 21A @ 25°C Turn-off Delay Time tf TYP VGS = 10V Rise Time td(off) MIN Test Conditions 110 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM Characteristic / Test Conditions MIN TYP MAX 21 Continuous Source Current (Body Diode) UNIT Amps Pulsed Source Current 1 (Body Diode) 84 VSD Diode Forward Voltage 2 (VGS = 0V, IS = -21A) 1.3 Volts dv/ Peak Diode Recovery 15 V/ns dt dv/ 5 dt t rr Reverse Recovery Time (IS = -21A, di/dt = 100A/µs) Tj = 25°C 250 Tj = 125°C 515 Q rr Reverse Recovery Charge (IS = -21A, di/dt = 100A/µs) Tj = 25°C 1.78 Tj = 125°C 5.17 IRRM Peak Recovery Current (IS = -21A, di/dt = 100A/µs) Tj = 25°C 11.9 Tj = 125°C 18.5 ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic RθJC Junction to Case RθJA Junction to Ambient 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 MIN TYP MAX 0.22 40 0.9 0.35 0.7 0.25 0.5 0.20 0.15 0.3 0.10 0.1 0.05 0 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7133 Rev C 9-2004 0.45 0.30 t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.05 10-5 °C/W 4 Starting Tj = +25°C, L = 5.49mH, RG = 25Ω, Peak IL = 21A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID21A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.40 UNIT SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves APT6029BFLL_SFLL 60 RC MODEL Junction temp. (°C) 0.161 0.00994F Power (watts) 0.259 0.236F ID, DRAIN CURRENT (AMPERES) VGS =15 &10V 50 8V 7V 40 30 6.5 20 6V 10 5.5V Case temperature. (°C) 5V FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 80 VDS> ID (ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @