1000V 60A
APT60D100BG
APT60D100SG
Pb Free Terminal Finish.
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
PRODUCT APPLICATIONS
PRODUCT FEATURES
PRODUCT BENEFITS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Free Wheeling Diode
-Motor Controllers
-Converters
-Inverters
• Snubber Diode
• Ultrafast Recovery Times
• Low Losses
• Soft Recovery Characteristics
• Low Noise Switching
• Cooler Operation
• Popular TO-247 Package or
Surface Mount D3PAK Package
• Higher Reliability Systems
• Low Forward Voltage
• Low Leakage Current
• PFC
2
1
• Increased System Power
Density
1 - Cathode
2 - Anode
Back of Case - Cathode
MAXIMUM RATINGS
Symbol
VR
All Ratings: TC = 25°C unless otherwise specified.
APT60D100(B/S)G
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage
VRRM
Maximum Peak Repetitive Reverse Voltage
VRWM
Maximum Working Peak Reverse Voltage
IF(AV)
Maximum Average Forward Current (TC = 142°C, Duty Cycle = 0.5)
IF(AV)
RMS Forward Current (Square wave, 50% duty)
152
IFSM
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
540
TJ,TSTG
TL
UNIT
1000
Volts
60
Amps
-55 to 175
Operating and StorageTemperature Range
°C
300
Lead Temperature for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
053-0001 Rev G
1-2020
VF
Characteristic / Test Conditions
Forward Voltage
IRM
Maximum Reverse Leakage Current
CT
Junction Capacitance, VR = 200V
MIN
TYP
MAX
IF = 60A
1.9
2.5
IF = 120A
2.2
IF = 60A, TJ = 125°C
1.7
Volts
VR = VR Rated
250
VR = VR Rated, TJ = 125°C
500
Microsemi Website - http://www.microsemi.com
65
UNIT
µA
pF
APT60D100(B/S)G
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
trr
Reverse Recovery Time
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 60A, diF/dt = -200A/µs
Maximum Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
VR = 667V, TC = 25°C
Maximum Reverse Recovery Current
trr
IRRM
IF = 60A, diF/dt = -200A/µs
VR = 667V, TC = 125°C
IF = 60A, diF/dt = -1000A/µs
Maximum Reverse Recovery Current
VR = 667V, TC = 125°C
MIN
TYP
-
34
-
280
-
760
-
6
-
350
ns
-
3600
nC
-
16
-
170
ns
-
5650
nC
-
50
Amps
MIN
TYP
MAX
UNIT
ns
nC
-
-
Amps
Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MAX
RθJC
Junction-to-Case Thermal Resistance
.21
RθJA
Junction-to-Ambient Thermal Resistance
40
WT
Torque
Package Weight
oz
5.9
g
10
lb•in
1.1
N•m
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.15
0.7
Note:
0.5
0.10
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
0.25
0.9
0.3
0
t
0.1
0.05
10
-5
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
SINGLE PULSE
10
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
-4
RC MODEL
1-2020
Junction
temp (°C)
053-0001 Rev G
t1
t2
0.05
Power
(watts)
0.0152 °C/W
0.00643 J/°C
0.0833 °C/W
0.0170 J/°C
0.112 °C/W
0.173 J/°C
Case temperature (°C)
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
°C/W
0.22
Maximum Mounting Torque
0.20
UNIT
TYPICAL PERFORMANCE CURVES
200
140
TJ = 150°C
100
80
TJ = 125°C
60
TJ = 25°C
40
TJ = -55°C
20
0
0
0.5
1
1.5
2
2.5
3
VF, ANODE-TO-CATHODE VOLTAGE (V)
Figure 2. Forward Current vs. Forward Voltage
Qrr, REVERSE RECOVERY CHARGE
(nC)
8000
T = 125°C
J
V = 667V
R
7000
120A
6000
5000
60A
4000
3000
30A
2000
1000
0
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
trr, REVERSE RECOVERY TIME
(ns)
160
100
60
T = 125°C
J
V = 667V
0.6 t
rr
120A
R
50
40
60A
30
20
30A
10
Duty cycle = 0.5
T = 175°C
160
J
140
IF(AV) (A)
Kf, DYNAMIC PARAMETERS
(Normalized to 1000A/µs)
200
120
IRRM
Qrr
0.4
100
80
60
40
20
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature
0
600
CJ, JUNCTION CAPACITANCE
(pF)
30A
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 5. Reverse Recovery Current vs. Current Rate of Change
Qrr
0.8
0.0
1-2020
60A
300
0
trr
0.2
053-0001 Rev G
400
180
1.0
R
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 3. Reverse Recovery Time vs. Current Rate of Change
1.4
1.2
T = 125°C
J
V = 667V
120A
0
IRRM, REVERSE RECOVERY CURRENT
(A)
IF, FORWARD CURRENT
(A)
180
120
APT60D100(B/S)G
500
500
400
300
200
100
0
1
10
100 200
VR, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
0
25
50
75
100
125
150
175
Case Temperature (°C)
Figure 7. Maximum Average Forward Current vs. CaseTemperature
APT60D100(B/S)G
Vr
diF /dt Adjust
+18V
APT10035LLL
0V
D.U.T.
30µH
trr/Qrr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
IF - Forward Conduction Current
2
diF /dt - Rate of Diode Current Change Through Zero Crossing.
3
IRRM - Maximum Reverse Recovery Current.
4
trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
5
1
4
Zero
5
0.25 IRRM
3
2
Qrr - Area Under the Curve Defined by IRRM and trr.
Figure 10, Diode Reverse Recovery Waveform and Definitions
3
D PAK Package Outline
TO-247 Package Outline
4.90 (.193)
5.10 (.201)
1.45 (.057)
1.60 (.063)
Cathode
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
Cathode
(Heat Sink)
e3 100% Sn
15.85 (.624)
16.05(.632)
1.00 (.039)
1.15(.045)
12.40 (.488)
12.70 (.500)
18.70 (.736)
19.10 (.752)
0.40 (.016)
0.65 (.026)
0.40 (.016)
1.016 (.040)
0.020 (.001)
0.250 (.010)
2.70 (.106)
2.90 (.114)
1.15 (.045)
1.45 (.057)
1.20 (.047)
1.90 (.075) 1.40 (.055)
2.10 (.083)
5.45 (.215) BSC
(2 Plcs.)
2.21 (.087)
2.59 (.102)
053-0001 Rev G
1-2020
Dimensions in Millimeters and (Inches)
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are trademarks of Microsemi Corporation. All other trademarks and service
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13.30 (.524)
13.60(.535)
2.40 (.094)
2.70 (.106)
(Base of Lead)
Heat Sink (Cathode)
and Leads
are Plated
Anode
Cathode
Dimensions in Millimeters (Inches)
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for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The
products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with
mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and
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