APT60D40BG Fast Soft Recovery Rectifier Diode
Product Overview
The APT60D40BG is a 400 V, 60 A Fast Soft Recovery Rectifier Si diode in a TO-247 package.
Features
The following are key features of the APT60D40BG device:
• Fast recovery times
• Soft recovery characteristics
• Low forward voltage
• Low leakage current
• RoHS compliant
Benefits
The following are benefits of the APT60D40BG device:
• Low switching losses
• Low noise (EMI) switching
• Cooler operation
• Higher reliability systems
• Increased system power density
Applications
The APT60D40BG device is designed for the following applications:
• Power factor correction (PFC)
• Anti-parallel diode
◦ Switchmode power supply
◦ Inverters
• Freewheeling diode
◦ Motor controllers
◦ Inverters/converters
• Snubber diode
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Device Specifications
Device Specifications
This section shows the specifications of the APT60D40BG device.
Absolute Maximum Ratings
The following table shows the absolute maximum ratings of the APT60D40BG device. TC = 25 °C unless
otherwise specified.
Table 1 • Absolute Maximum Ratings
Symbol
Parameter
Ratings
Unit
VR
Maximum DC reverse voltage
400
V
VRRM
Maximum peak repetitive reverse voltage
VRWM
Maximum working peak reverse voltage
IF(AV)
Maximum average forward current (TC = 140 °C, duty cycle = 0.5)
60
A
IFSM
Non-repetitive forward surge current (TJ = 45 °C, 8.3 ms)
600
The following table shows the thermal and mechanical characteristics of the APT60D40BG device.
Table 2 • Thermal and Mechanical Characteristics
Symbol
Characteristic/Test Conditions
RθJC
Min
Typ
Max
Unit
Junction-to-case thermal resistance
0.34
°C/W
RθJA
Junction-to-ambient thermal resistance
40
TJ , TSTG
Operating and storage temperature range
TL
Lead temperature for 10 seconds
Wt
Package weight
–55
Mounting torque, 6-32 or M3 screw
053-4001 APT60D40BG Datasheet Revision G
175
°C
300
0.22
oz
6.2
g
10
lbf-in
1.1
N-m
3
Device Specifications
Electrical Performance
The following table shows the static characteristics of the APT60D40BG device. TJ = 25 °C unless otherwise
specified.
Table 3 • Static Characteristics
Symbol
Characteristic
Test Conditions
VF
Forward voltage
IRM
CJ
Maximum reverse
leakage current
Junction capacitance
Min
Typ
Max
Unit
IF = 60 A
1.3
1.5
V
IF = 120 A
1.6
IF = 60 A, TJ = 125 °C
1.2
VR = VR Rated
250
μA
VR = VR Rated, TJ = 125 °C
500
VR = 200 V
120
pF
The following table shows the dynamic characteristics of the APT60D40BG device.
Table 4 • Dynamic Characteristics
Symbol
Characteristic
Test Conditions
trr
Reverse recovery time
IF = 1 A, diF/dt = –100 A/µs
Min
Typ
30
Max
Unit
ns
VR = 30 V
trr
Reverse recovery time
Qrr
Reverse recovery
charge
IRRM
Maximum reverse
recovery current
trr
Reverse recovery time
Qrr
Reverse recovery
charge
IRRM
Maximum reverse
recovery current
trr
Reverse recovery time
Qrr
Reverse recovery
charge
IRRM
Maximum reverse
recovery current
IF = 60 A, diF/dt = –200 A/µs
VR = 266 V
IF = 60 A, diF/dt = –200 A/µs
VR = 266 V, TJ = 125 °C
IF = 60 A, diF/dt = –800 A/µs
VR = 266 V, TJ = 125 °C
37
80
nC
4
A
110
ns
540
nC
10
A
65
ns
1050
nC
27
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Device Specifications
Typical Performance Curves
This section shows the typical performance curves of the APT60D40BG device.
Figure 1 • Maximum Transient Thermal Impedance
Figure 2 • Forward Current vs. Forward Voltage
Figure 3 • Reverse Recovery Time vs.
Current Rate of Change
Figure 4 • Reverse Recovery Charge vs.
Current Rate of Change
Figure 5 • Reverse Recovery Current vs.
Current Rate of Change
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Device Specifications
Figure 6 • Dynamic Parameters vs.
Junction Temperature
Figure 7 • Maximum Average Forward Current vs.
Case Temperature
Figure 8 • Junction Capacitance vs.
Reverse Voltage
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Device Specifications
Reverse Recovery Overview
The figure illustrates the diode test circuit of the APT60D40BG device.
Figure 9 • Diode Test Circuit
The following figure illustrates the diode reverse recovery waveform and definitions of the APT60D40BG
device.
Figure 10 • Diode Reverse Recovery Waveform and Definitions
1. IF — Forward conduction current.
2. diF/dt — Rate of diode current change through zero crossing.
3. IRRM — Maximum reverse recovery current.
4. trr — Reverse recovery time, measured from zero crossing where diode current goes from positive to
negative, to the point at which the straight line through IRRM and 0.25•IRRM passes through zero.
5. Qrr — Area under the curve defined by IRRM and trr.
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Package Specification
Package Specification
This section shows the package specification of the APT60D40BG device.
Package Outline Drawing
The following figure illustrates the TO-247 package outline of the APT60D40BG device.
Figure 11 • Package Outline Drawing
The following table shows the TO-247 dimensions and should be used in conjunction with the package
outline drawing.
Table 5 • TO-247 Dimensions
Symbol
Min
Max
(mm)
Min
Max
(Inch)
A
4.69
5.31
0.185
0.209
B
1.49
2.49
0.059
0.098
C
2.21
2.59
0.087
0.102
D
0.40
0.79
0.016
0.031
E
5.38
6.20
0.212
0.244
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Package Specification
Symbol
Min
Max
(mm)
Min
Max
(Inch)
F
3.50
3.81
0.138
0.150
G
6.15 BSC
0.242 BSC
H
20.80
21.46
0.819
0.845
I
19.81
20.32
0.780
0.800
J
4.00
4.50
0.157
0.177
K
1.01
1.40
0.040
0.055
L
2.87
3.12
0.113
0.123
M
1.65
2.13
0.065
0.084
N
15.49
16.26
0.610
0.640
O
13.50
14.50
0.531
0.571
P
16.50
17.50
0.650
0.689
Q
5.45 BSC
0.215 BSC
R
2.00
2.75
0.079
0.108
S
7.10
7.50
0.280
0.295
TERMINAL 1
CATHODE
TERMINAL 2
ANODE
TERMINAL 3
CATHODE
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053-4001 | April 2020 | Released
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