APT60GF120JRDQ3

APT60GF120JRDQ3 1200V TYPICAL PERFORMANCE CURVES APT60GF120JRDQ3 ® E E FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. • Low Forward Voltage Drop • High Freq. Switching to 20KHz • RBSOA and SCSOA Rated • Ultra Low Leakage Current C G ISOTOP ® S OT 22 7 "UL Recognized" file # E145592 C • Ultrafast Soft Recovery Anti-parallel Diode G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT60GF120JRDQ3 VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 149 I C2 Continuous Collector Current @ TC = 100°C 79 I CM SSOA PD TJ,TSTG Pulsed Collector Current 1 UNIT Volts Amps 300 Switching Safe Operating Area @ TJ = 150°C 300A @ 1200V Total Power Dissipation Watts 625 Operating and Storage Junction Temperature Range -55 to 150 STATIC ELECTRICAL CHARACTERISTICS Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 350µA) VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES TYP MAX 5.5 6.5 Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 25°C) 2.5 3.0 Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 125°C) 3.1 1200 (VCE = VGE, I C = 500µA, Tj = 25°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) Units 4.5 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 0.35 2 Gate-Emitter Leakage Current (VGE = ±20V) mA 3.0 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Volts nA 4-2006 V(BR)CES MIN Rev A Characteristic / Test Conditions 052-6287 Symbol APT60GF120JRDQ3 DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage 3 Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge SSOA Switching Safe Operating Area td(on) tr td(off) tf Eon1 tf 435 Gate Charge 10.0 VGE = 15V 685 100 nC ns 460 I C = 100A 38 RG = 1.0Ω 14.6 TJ = +25°C 5 V A 44 4 pF 300 VCC = 800V Current Fall Time UNIT 420 Inductive Switching (25°C) Turn-off Delay Time MAX 80 VGE = 15V Turn-off Switching Energy td(off) f = 1 MHz I C = 100A Current Rise Time Eoff tr 785 TJ = 150°C, R G = 1.0Ω, VGE = Turn-on Switching Energy (With Diode) td(on) 7080 VGE = 0V, VCE = 25V 15V, L = 100µH,VCE = 1200V Eon2 TYP Capacitance VCE = 600V Turn-on Delay Time Turn-on Switching Energy MIN mJ 16.4 6 6.5 Turn-on Delay Time Inductive Switching (125°C) 44 VCC = 800V 100 Current Rise Time Turn-off Delay Time VGE = 15V 540 RG = 1.0Ω 125 14.6 I C = 100A Current Fall Time Eon1 Turn-on Switching Energy Eon2 Turn-on Switching Energy (With Diode) Eoff Turn-off Switching Energy 44 55 TJ = +125°C ns mJ 21.4 6 9.2 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RθJC Junction to Case (IGBT) 0.20 RθJC Junction to Case (DIODE) N/A VIsolation WT Torque RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) Package Weight Maximum Terminal & Mounting Torque 2500 UNIT °C/W Volts 1.03 oz 29.2 gm 10 Ib•in 1.1 N•m 052-6287 Rev A 4-2006 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and diode leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES 15V TJ = -55°C 140 120 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) = 15V TJ = 25°C 100 80 TJ = 125°C 60 40 20 0 IC, COLLECTOR CURRENT (A) 140 120 100 TJ = -55°C 80 60 TJ = 25°C 40 20 0 TJ = 125°C 0 200 11V 150 10V 100 9V 50 8V FIGURE 2, Output Characteristics (TJ = 125°C) 16 VGE, GATE-TO-EMITTER VOLTAGE (V) 250µs PULSE TEST