APT60GF60JU2

APT60GF60JU2 ISOTOP® Boost chopper NPT IGBT VCES = 600V IC = 60A @ Tc = 95°C Application  AC and DC motor control  Switched Mode Power Supplies  Power Factor Correction  Brake switch K C Features  Non Punch Through (NPT) THUNDERBOLT IGBT    - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated ISOTOP® Package (SOT-227) Very low stray inductance High level of integration G E K E Benefits  Outstanding performance at high frequency operation  Stable temperature behavior  Very rugged  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Easy paralleling due to positive TC of VCEsat  RoHS Compliant C G ISOTOP Absolute maximum ratings TC = 25°C Max ratings 600 93 60 360 ±20 378 ILM RBSOA clamped Inductive load Current RG=11Ω TC = 25°C 360 IFAV Maximum Average Forward Current TC = 80°C 30 IFRMS RMS Forward Current (Square wave, 50% duty) TC = 25°C TC = 95°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Duty cycle=0.5 39 Unit V A A V W October, 2012 Parameter Collector - Emitter Breakdown Voltage A These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. www.microsemi.com 1-9 APT60GF60JU2 – Rev 2 Symbol VCES IC1 IC2 ICM VGE PD APT60GF60JU2 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Tj = 25°C VGE = 0V VCE = 600V Tj = 125°C T j = 25°C VGE =15V IC = 60A Tj = 125°C VGE = VCE, IC = 500µA VGE = ±20V, VCE = 0V Min Typ Max 80 2000 2.5 2.8 5 ±100 Unit 3 4 Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Typ 3125 310 180 257 19 120 20 95 Max 3590 450 310 410 30 180 40 190 Unit 315 470 245 26 63 395 68 3.4 25 59 430 65 1.6 490 50 125 590 140 7 50 120 650 130 3.2 mJ mJ 2.0 µA V V nA Dynamic Characteristics Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time VGS = 15V VBus = 300V IC = 60A Resistive Switching (25°C) VGE = 15V VBus = 300V IC = 60A RG = 5 Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 60A RG = 5 Td(off) Turn-off Delay Time Tf Td(on) Tr Td(off) Tf Ets Td(on) Tr Td(off) Tf Eon Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total switching Losses Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Eoff Turn-off Switching Energy 2.4 4.8 Ets Total switching Losses 4.0 8.0 nC ns ns ns October, 2012 Inductive Switching (150°C) VGE = 15V VBus = 400V IC = 60A RG = 5 pF www.microsemi.com 2-9 APT60GF60JU2 – Rev 2 Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr APT60GF60JU2 Chopper diode ratings and characteristics Symbol VF Characteristic Diode Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance Reverse Recovery Time trr Test Conditions IF = 30A IF = 60A IF = 30A VR = 600V VR = 600V VR = 200V IF=1A,VR=30V di/dt =100A/µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C 23 IF = 30A VR = 400V di/dt =200A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 85 160 4 8 130 700 70 1300 30 Reverse Recovery Time IRRM Qrr trr Qrr IRRM Maximum Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 30A VR = 400V di/dt =1000A/µs Min Typ 1.6 1.9 1.4 Max 1.8 V 250 500 44 Tj = 125°C Unit µA pF ns A nC ns nC A Thermal and package characteristics Symbol Characteristic Junction to Case Thermal Resistance RthJA VISOL TJ,TSTG TL Torque Wt Junction to Ambient (IGBT & Diode) Typ RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 2500 -55 Unit °C/W V 150 300 1.5 29.2 °C N.m g October, 2012 Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight Max 0.33 1.21 20 www.microsemi.com 3-9 APT60GF60JU2 – Rev 2 RthJC Min IGBT Diode APT60GF60JU2 www.microsemi.com 4-9 APT60GF60JU2 – Rev 2 October, 2012 Typical IGBT Performance Curve www.microsemi.com 5-9 APT60GF60JU2 – Rev 2 October, 2012 APT60GF60JU2 APT60GF60JU2 www.microsemi.com 6-9 APT60GF60JU2 – Rev 2 October, 2012 Typical Diode Performance Curve www.microsemi.com 7-9 APT60GF60JU2 – Rev 2 October, 2012 APT60GF60JU2 APT60GF60JU2 SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 1.95 (.077) 2.14 (.084) Cathode 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) Collector * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Emitter Gate ISOTOP® is a registered trademark of ST Microelectronics NV www.microsemi.com 8-9 APT60GF60JU2 – Rev 2 October, 2012 Dimensions in Millimeters and (Inches) APT60GF60JU2 DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. 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