APT60GT60JR

APT60GT60JR 600V Thunderbolt IGBT™ 93A E E The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. 27 2 T- C G SO "UL Recognized" • Low Forward Voltage Drop • High Freq. Switching to 150KHz • Low Tail Current • Ultra Low Leakage Current • Avalanche Rated • RBSOA and SCSOA Rated ISOTOP ® C G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter VCES Collector-Emitter Voltage 600 VCGR Collector-Gate Voltage (RGE = 20KΩ) 600 VGE Gate Emitter Voltage ±20 I C1 Continuous Collector Current @ TC = 25°C 93 I C2 Continuous Collector Current @ TC = 95°C 60 I CM Pulsed Collector Current I LM RBSOA Clamped Inductive Load Current RG = 11Ω TC = 25°C EAS Single Pule Avalanche Energy 2 PD Total Power Dissipation TJ,TSTG TL UNIT APT60GT60JR 1 Volts Amps @ TC = 25°C 360 360 Operating and Storage Junction Temperature Range 65 mJ 378 Watts -55 to 150 °C 300 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS BVCES VGE(TH) VCE(ON) I CES I GES Characteristic / Test Conditions MIN Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA) 600 Gate Threshold Voltage 3 (VCE = VGE, I C = 500µA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25°C) TYP MAX 4 5 2.0 2.5 Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 125°C) 2.8 Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) 80 Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C) 2000 Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V) ±100 UNIT Volts µA nA CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 052-6221 Rev D 6-2008 Symbol DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller") Charge tr td(off) tf td(on) tr td(off) tf Turn-on Delay Time MIN Capacitance VGE = 0V pF 257 410 19 30 I C = I C2 120 180 Resistive Switching (25°C) 20 40 VGE = 15V 95 190 315 470 245 490 25 50 59 120 430 650 65 130 VCC = 0.5VCES VCC = 0.5VCES I C = I C2 RG = 5Ω Fall Time Turn-on Delay Time Inductive Switching (150°C) VCLAMP(Peak) = 0.66VCES VGE = 15V Fall Time I C = I C2 Turn-on Switching Energy R G = 5Ω 1.6 3.2 Eoff Turn-off Switching Energy TJ = +150°C 2.4 4.8 Ets Total Switching Losses 4.0 8.0 26 50 63 125 395 590 R G = 5Ω 68 140 TJ = +25°C 3.4 7.0 Eon td(on) tr td(off) tf Turn-on Delay Time Rise Time Inductive Switching (25°C) VCLAMP(Peak) = 0.66VCES Turn-off Delay Time Fall Time Ets Total Switching Losses gfe Forward Transconductance VGE = 15V I C = I C2 VCE = 20V, I C = I C2 UNIT 92 Gate Charge VGE = 15V Turn-off Delay Time Turn-off Delay Time MAX 150 f = 1 MHz Rise Time Rise Time TYP 1600 VCE = 25V 3 Qg td(on) APT60GT60JR 4 nC ns ns mJ ns mJ S THERMAL AND MECHANICAL CHARACTERISTICS Symbol RΘJC Junction to Case RΘJA Junction to Ambient WT Torque 052-6221 Rev D 6-2008 Characteristic MIN TYP MAX UNIT 0.33 °C/W Package Weight 20 1.03 oz 29.2 gm 10 lb•in 1.5 N•m Mounting Torque (Mounting = 8-32 or 4mm Machine and Terminals = 4mm Machine) 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 IC = IC2, RGE = 25Ω, L = 100µH, Tj = 25°C 3 See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 160 VGE=17, 15, 13, 11 & 10V 9V 120 8V 80 7V 40 6V IC, COLLECTOR CURRENT (AMPERES) IC, COLLECTOR CURRENT (AMPERES) 160 0 IC, COLLECTOR CURRENT (AMPERES) IC, COLLECTOR CURRENT (AMPERES) 7V 40 6V 200 120 TC=+25°C TC=+150°C 80 TC=-55°C 40 8V 80 5V 0 4 8 12 16 20 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 2, Typical Output Characteristics (TJ = 150°C) 160 250 µsec. Pulse Test VGE = 15V 9V 120 0 0 4 8 12 16 20 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 1, Typical Output Characteristics (TJ = 25°C) 100 OPERATION LIMITED BY VCE (SAT) 100µs 1ms 10 5 TC =+25°C TJ =+150°C SINGLE PULSE 10ms 1 0 10,000 Cies 1,000 f = 1MHz Coes Cres 100 0.01 0.1 1.0 10 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage 1 5 10 50 100 600 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 4, Maximum Forward Safe Operating Area VGE, GATE-TO-EMITTER VOLTAGE (VOLTS) 0 1 2 3 4 5 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 3, Typical Output Characteristics @ VGE = 15V C, CAPACITANCE (pF) VGE=17, 15, 13, 11 & 10V 20 IC = IC2 TJ = +25°C VCE=120V 16 VCE=300V 12 VCE=480V 8 4 0 0 100 200 300 400 Qg, TOTAL GATE CHARGE (nC) Figure 6, Gate Charges vs Gate-To-Emitter Voltage D=0.5 0.1 0.2 0.05 0.1 0.05 Note: 0.02 0.01 0.005 SINGLE PULSE t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.001 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10 052-6221 Rev D 6-2008 0.01 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.35 APT60GT60JR 100 3.5 IC, COLLECTOR CURRENT (AMPERES) VCE(SAT), COLLECTOR-TO-EMITTER SATURATION VOLTAGE (VOLTS) 4.0 IC1 3.0 2.5 IC2 2.0 0.5 IC2 1.5 1.0 -50 70 60 50 40 30 20 10 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 9, Maximum Collector Current vs Case Temperature 8.0 SWITCHING ENERGY LOSSES (mJ) BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED) 80 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 8, Typical VCE(SAT) Voltage vs Junction Temperature 1.2 1.1 1 0.9 0.8 0.7 VCC = 0.66 VCES VGE = +15V TJ = +25°C IC = IC2 6.0 Eoff 4.0 Eon 2.0 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 10, Breakdown Voltage vs Junction Temperature -50 0 20 40 60 80 100 RG, GATE RESISTANCE (OHMS) Figure 11, Typical Switching Energy Losses vs Gate Resistance 2.5 20 SWITCHING ENERGY LOSSES (mJ) TOTAL SWITCHING ENERGY LOSSES (mJ) 90 IC1 10 VCC = 0.66 VCES VGE = +15V RG = 10 Ω IC2 0.5 IC2 1 -50 2.0 VCC = 0.66 VCES VGE = +15V TJ = +125°C RG = 10 Ω Eoff 1.5 1.0 Eon 0.5 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 12, Typical Switching Energy Losses vs. Junction Temperature 0 10 20 30 40 50 60 IC, COLLECTOR CURRENT (AMPERES) Figure 13, Typical Switching Energy Losses vs Collector Current IC, COLLECTOR CURRENT (AMPERES) 052-6221 Rev D 6-2008 120 For Both: Duty Cycle = 50% TJ = +125°C Tsink = +90°C Gate drive as specified Power dissapation = 140W ILOAD = IRMS of fundamental 10 1 0.1 1.0 10 F, FREQUENCY (KHz) Figure 14,Typical Load Current vs Frequency 100 1000 APT60GT60JR VCHARGE *DRIVER SAME TYPE AS D.U.T. VCC = 0.66 VCES Et s = E on + E off A A 90% VC B 10% B t d (on) IC t d(off) IC VC 100uH 90% D.U.T. VCE (SAT) tr VC A D.U.T. DRIVER* 10% IC RG V CLAMP 90% 10% tf E on E off t=2us Figure 15, Switching Loss Test Circuit and Waveforms 2 VCE(off) VGE(on) V CC 90% .5 VCES RL = I C2 2 D.U.T. 10% VGE(off) t d (on) tr t d(off) 1 tf Figure 16, Resistive Switching Time Test Circuit and Waveforms SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Emitter 30.1 (1.185) 30.3 (1.193) Collector * Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Emitter Dimensions in Millimeters and (Inches) Gate 052-6221 Rev D 6-2008 1 From Gate Drive Circuitry VCE(on) RG