APT60GT60JRDQ3

APT60GT60JRDQ3 600V TYPICAL PERFORMANCE CURVES APT60GT60JRDQ3 ® E E Thunderbolt IGBT® The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop • High Freq. Switching to 100KHz • Low Tail Current • Ultra Low Leakage Current C G ISOTOP ® 22 OT 7 S "UL Recognized" file # E145592 C • RBSOA and SCSOA Rated G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT60GT60JRDQ3 VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 105 I C2 Continuous Collector Current @ TC = 110°C 48 I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 1 UNIT Volts Amps 360 Switching Safe Operating Area @ TJ = 150°C 360A @ 600V Total Power Dissipation Watts 379 Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 330µA) 600 VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES TYP MAX 4 5 Collector-Emitter On Voltage (VGE = 15V, I C = 60A, Tj = 25°C) 2.0 2.5 Collector-Emitter On Voltage (VGE = 15V, I C = 60A, Tj = 125°C) 2.8 (VCE = VGE, I C = 700µA, Tj = 25°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 3 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 330 2 Gate-Emitter Leakage Current (VGE = ±20V) Volts µA 2500 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Units nA 8-2007 MIN Rev A Characteristic / Test Conditions 052-6220 Symbol DYNAMIC CHARACTERISTICS Symbol APT60GT60JRDQ3 Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage 3 Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge SSOA Switching Safe Operating Area td(on) tr td(off) tf Eon1 tf 185 Gate Charge 7.5 VGE = 15V 290 15V, L = 100µH,VCE = 600V 1265 TJ = +25°C 1200 17 VCC = 400V 34 Turn-off Delay Time VGE = 15V 260 RG = 4.3Ω 60 1285 I C = 60A Current Fall Time Eoff Turn-off Switching Energy µJ 1505 Inductive Switching (125°C) Current Rise Time Turn-on Switching Energy (Diode) ns 26 RG = 4.3Ω Turn-on Delay Time Turn-on Switching Energy nC 235 6 Eon2 V A 34 I C = 60A Eon1 pF 360 17 5 UNIT 130 VCC = 400V 4 MAX 20 Inductive Switching (25°C) Current Fall Time Turn-off Switching Energy td(off) f = 1 MHz TJ = 150°C, R G = 4.3Ω, VGE = Turn-off Delay Time Eoff tr 390 VGE = 15V Turn-on Switching Energy (Diode) td(on) 3100 VGE = 0V, VCE = 25V I C = 60A Current Rise Time Eon2 TYP Capacitance VCE = 300V Turn-on Delay Time Turn-on Switching Energy MIN 44 55 TJ = +125°C ns µJ 2135 6 1705 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RθJC Junction to Case (IGBT) .33 RθJC Junction to Case (DIODE) .60 WT VIsolation Package Weight 29.2 RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) 2500 UNIT °C/W gm Volts 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 052-6220 Rev A 8-2007 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES TC = -55°C 140 120 TC = 25°C 100 80 TC = 125°C 60 40 20 0 IC, COLLECTOR CURRENT (A) 140 TJ = -55°C TJ = 25°C 120 100 80 60 TJ = 125°C 40 20 0 0 10V 150 9V 100 8V 7V 50 6V FIGURE 2, Output Characteristics (TJ = 125°C) 16 VGE, GATE-TO-EMITTER VOLTAGE (V) 250µs PULSE TEST