APT64GA90B
APT64GA90S
900V
High Speed PT IGBT
TO
APT64GA90S
POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved
-24
7
through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK
VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low
gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short
delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the
APT64GA90B
poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even
when switching at high frequency.
Single die IGBT
®
FEATURES
TYPICAL APPLICATIONS
• Fast switching with low EMI
• ZVS phase shifted and other full bridge
• Very Low Eoff for maximum efficiency
• Half bridge
• Ultra low Cres for improved noise immunity
• High power PFC boost
• Low conduction loss
• Welding
• Low gate charge
• UPS, solar, and other inverters
• Increased intrinsic gate resistance for low EMI
• High frequency, high efficiency industrial
• RoHS compliant
Absolute Maximum Ratings
Ratings
Unit
Collector Emitter Voltage
900
V
IC1
Continuous Collector Current @ TC = 25°C
117
IC2
Continuous Collector Current @ TC = 100°C
64
193
A
ICM
Pulsed Collector Current
VGE
Gate-Emitter Voltage 2
±30
V
PD
Total Power Dissipation @ TC = 25°C
500
W
1
SSOA
Switching Safe Operating Area @ TJ = 150°C
TJ, TSTG
Operating and Storage Junction Temperature Range
TL
-55 to 150
Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
Static Characteristics
Symbol
193A @ 900V
°C
300
TJ = 25°C unless otherwise specified
Parameter
Test Conditions
Min
VBR(CES)
Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 1.0mA
900
VCE(on)
Collector-Emitter On Voltage
VGE(th)
Gate Emitter Threshold Voltage
Zero Gate Voltage Collector Current
IGES
Gate-Emitter Leakage Current
Max
3.1
VGE = 15V,
TJ = 25°C
2.5
IC = 38A
TJ = 125°C
2.2
VGE =VCE , IC = 1mA
ICES
Typ
3
4.5
V
6
VCE = 900V,
TJ = 25°C
250
VGE = 0V
TJ = 125°C
1000
VGS = ±30V
Unit
±100
μA
nA
Thermal and Mechanical Characteristics
Symbol
Min
Typ
Max
Unit
RθJC
Junction to Case Thermal Resistance
-
-
0.25
°C/W
WT
Package Weight
-
5.9
-
g
10
in·lbf
Torque
Characteristic
Mounting Torque (TO-247 Package), 4-40 or M3 screw
Microsemi Website - http://www.microsemi.com
6 - 2011
Vces
Parameter
052-6325 Rev D
Symbol
Dynamic Characteristics
Symbol
Parameter
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Qg3
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
SSOA
td(on)
tr
td(off)
tf
Gate- Collector Charge
Switching Safe Operating Area
Turn-On Delay Time
APT64GA90B_S
TJ = 25°C unless otherwise specified
Test Conditions
Min
Typ
Capacitance
3525
VGE = 0V, VCE = 25V
318
f = 1MHz
53
Gate Charge
162
VGE = 15V
26
VCE= 450V
64
193
Inductive Switching (25°C)
VCC = 600V
26
Turn-Off Delay Time
VGE = 15V
131
IC = 38A
104
RG = 4.7Ω4
1192
Eoff6
Turn-Off Switching Energy
TJ = +25°C
1088
td(on
Turn-On Delay Time
Inductive Switching (125°C)
17
Current Rise Time
VCC = 600V
27
Turn-Off Delay Time
VGE = 15V
181
IC = 38A
171
Eon2
Turn-On Switching Energy
RG = 4.7Ω4
1857
Eoff6
Turn-Off Switching Energy
TJ = +125°C
2311
tf
Current Fall Time
nC
18
Turn-On Switching Energy
tr
pF
A
L= 100uH, VCE = 900V
Eon2
td(off)
Unit
IC = 38A
TJ = 150°C, RG = 4.7Ω4, VGE = 15V,
Current Rise Time
Current Fall Time
Max
ns
μJ
ns
μJ
052-6325 Rev D
6 - 2011
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
3 See Mil-Std-750 Method 3471.
4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the
clamping diode.
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Typical Performance Curves
100
V
GE
= 15V
APT64GA90B_S
300
TJ= 55°C
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
TJ= 125°C
80
TJ= 25°C
60
TJ= 150°C
40
20
13V
11V
15V
250
10V
200
9V
150
8V
100
7V
50
6V
0
0
0
1
2
3
4
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics (TJ = 25°C)
160
VGE, GATE-TO-EMITTER VOLTAGE (V)
120
100
TJ= -55°C
80
TJ= 125°C
60
TJ= 25°C
40
20
IC = 38A
2
IC = 13A
1
0
6
8
10
12
14
16
4
2
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
20
40 60 80 100 120 140 160 180
GATE CHARGE (nC)
FIGURE 4, Gate charge
4
IC = 76A
3
IC = 38A
2
IC = 19A
1
VGE = 15V.
250μs PULSE TEST
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