APT64GA90B2D30

APT64GA90LD30 APT64GA90B2D30 900V APT64GA90LD30 High Speed PT IGBT POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even APT64GA90B2D30 when switching at high frequency. TO -24 7 Combi (IGBT and Diode) FEATURES TYPICAL APPLICATIONS • Fast switching with low EMI • ZVS phase shifted and other full bridge • Very Low Eoff for maximum efficiency • Half bridge • Ultra low Cres for improved noise immunity • High power PFC boost • Low conduction loss • Welding • Low gate charge • UPS, solar, and other inverters • Increased intrinsic gate resistance for low EMI • High frequency, high efficiency industrial • RoHS compliant Absolute Maximum Ratings Ratings Unit Collector Emitter Voltage 900 V IC1 Continuous Collector Current @ TC = 25°C 117 IC2 Continuous Collector Current @ TC = 100°C 64 ICM Pulsed Collector Current 1 193 VGE Gate-Emitter Voltage ±30 V PD Total Power Dissipation @ TC = 25°C 500 W 2 SSOA Switching Safe Operating Area @ TJ = 150°C TJ, TSTG Operating and Storage Junction Temperature Range TL Symbol 193A @ 900V -55 to 150 Lead Temperature for Soldering: 0.063" from Case for 10 Seconds Static Characteristics A °C 300 TJ = 25°C unless otherwise specified Parameter VBR(CES) Collector-Emitter Breakdown Voltage VCE(on) Collector-Emitter On Voltage VGE(th) Gate Emitter Threshold Voltage Test Conditions Min VGE = 0V, IC = 250μA 900 Zero Gate Voltage Collector Current IGES Gate-Emitter Leakage Current Max 3.1 VGE = 15V, TJ = 25°C 2.5 IC = 38A TJ = 125°C 2.2 VGE =VCE , IC = 1mA ICES Typ 3 4.5 TJ = 25°C 350 VGE = 0V TJ = 125°C 1500 Microsemi Website - http://www.microsemi.com V 6 VCE = 900V, VGS = ±30V Unit ±100 μA nA 6 - 2011 Vces Parameter 052-6347 Rev E Symbol Dynamic Characteristics Symbol Parameter Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Qg3 Total Gate Charge Qge Gate-Emitter Charge Qgc SSOA td(on) tr td(off) tf APT64GA90L_B2D30 TJ = 25°C unless otherwise specified Test Conditions VGE = 0V, VCE = 25V 318 f = 1MHz 53 Gate Charge 162 VGE = 15V 26 IC = 38A Inductive Switching (25°C) 18 VCC = 600V 26 Turn-Off Delay Time VGE = 15V 131 IC = 38A 104 Turn-On Switching Energy RG = 4.7Ω4 1192 Eoff6 Turn-Off Switching Energy TJ = +25°C 1088 td(on) Turn-On Delay Time Inductive Switching (125°C) 17 tr Current Rise Time VCC = 600V 27 Turn-Off Delay Time VGE = 15V 181 IC = 38A 171 Eon2 Turn-On Switching Energy RG = 4.7Ω4 1857 Eoff6 Turn-Off Switching Energy TJ = +125°C 2311 tf Current Fall Time nC A Eon2 td(off) Unit pF 193 L= 100uH, VCE = 900V Current Rise Time Current Fall Time Max 64 TJ = 150°C, RG = 4.7Ω4, VGE = 15V, Turn-On Delay Time Typ 3525 VCE= 450V Gate- Collector Charge Switching Safe Operating Area Min Capacitance ns μJ ns μJ Thermal and Mechanical Characteristics Symbol Characteristic RθJC Junction to Case Thermal Resistance (IGBT) RθJC Junction to Case Thermal Resistance (Diode) WT Torque Package Weight Mounting Torque (TO-264 Package), 4-40 or M3 screw Min Typ Max - - .25 0.8 - 6.1 Unit °C/W - g 10 in·lbf 052-6347 Rev E 6 - 2011 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves APT64GA90L_B2D30 300 100 IC, COLLECTOR CURRENT (A) GE = 15V 80 TJ= 55°C 60 TJ= 150°C TJ= 25°C 40 20 13V 11V 15V TJ= 125°C IC, COLLECTOR CURRENT (A) V 250 10V 200 9V 150 8V 100 7V 50 6V 0 0 0 1 2 3 4 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25°C) 160 VGE, GATE-TO-EMITTER VOLTAGE (V) 120 100 TJ= -55°C 80 60 TJ= 125°C 40 TJ= 25°C 20 IC = 38A 2 IC = 13A 1 4 2 6 8 10 12 14 16 4 IC = 76A 3 IC = 38A 2 IC = 19A 1 VGE = 15V. 250μs PULSE TEST