APT68GA60B2D40

APT68GA60LD40 APT68GA60B2D40 600V APT68GA60LD40 High Speed PT IGBT POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even APT68GA60B2D40 when switching at high frequency. TO -24 7 Combi (IGBT and Diode) FEATURES TYPICAL APPLICATIONS • Fast switching with low EMI • ZVS phase shifted and other full bridge • Very Low Eoff for maximum efficiency • Half bridge • Ultra low Cres for improved noise immunity • High power PFC boost • Low conduction loss • Welding • Low gate charge • UPS, solar, and other inverters • Increased intrinsic gate resistance for low EMI • High frequency, high efficiency industrial • RoHS compliant Absolute Maximum Ratings Ratings Unit Collector Emitter Voltage 600 V IC1 Continuous Collector Current @ TC = 25°C 121 IC2 Continuous Collector Current @ TC = 100°C 68 ICM Pulsed Collector Current 1 202 VGE Gate-Emitter Voltage ±30 V PD Total Power Dissipation @ TC = 25°C 520 W Vces Parameter 2 SSOA Switching Safe Operating Area @ TJ = 150°C TJ, TSTG Operating and Storage Junction Temperature Range TL Symbol 202A @ 600V -55 to 150 Lead Temperature for Soldering: 0.063" from Case for 10 Seconds Static Characteristics A °C 300 TJ = 25°C unless otherwise specified Parameter VBR(CES) Collector-Emitter Breakdown Voltage VCE(on) Collector-Emitter On Voltage VGE(th) Gate Emitter Threshold Voltage Test Conditions Min VGE = 0V, IC = 250μA 600 Zero Gate Voltage Collector Current IGES Gate-Emitter Leakage Current Max 2.5 VGE = 15V, TJ = 25°C 2.0 IC = 40A TJ = 125°C 1.9 VGE =VCE , IC = 1mA ICES Typ 3 4.5 TJ = 25°C 275 VGE = 0V TJ = 125°C 3000 Microsemi Website - http://www.microsemi.com V 6 VCE = 600V, VGS = ±30V Unit ±100 μA nA 052-6341 Rev F 6 - 2011 Symbol Dynamic Characteristics Symbol Parameter Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Qg3 Total Gate Charge Qge Gate-Emitter Charge Qgc SSOA td(on) tr td(off) tf APT68GA60L_B2D40 TJ = 25°C unless otherwise specified Test Conditions VGE = 0V, VCE = 25V 526 f = 1MHz 59 Gate Charge 198 VGE = 15V 32 IC = 40A A 21 VCC = 400V 27 Turn-Off Delay Time VGE = 15V 133 IC = 40A 88 Eon2 Turn-On Switching Energy RG = 4.7Ω4 715 Eoff6 Turn-Off Switching Energy TJ = +25°C 607 td(on) Turn-On Delay Time Inductive Switching (125°C) 20 tr td(off) Current Rise Time VCC = 400V 26 Turn-Off Delay Time VGE = 15V 175 IC = 40A 129 Eon2 Turn-On Switching Energy RG = 4.7Ω4 1117 Eoff6 Turn-Off Switching Energy TJ = +125°C 1025 tf Current Fall Time nC L= 100uH, VCE = 600V Inductive Switching (25°C) Unit pF 202 Current Rise Time Current Fall Time Max 66 TJ = 150°C, RG = 4.7Ω4, VGE = 15V, Turn-On Delay Time Typ 5230 VCE= 300V Gate- Collector Charge Switching Safe Operating Area Min Capacitance ns μJ ns μJ Thermal and Mechanical Characteristics Symbol Characteristic RθJC Junction to Case Thermal Resistance (IGBT) RθJC Junction to Case Thermal Resistance (Diode) WT Torque Package Weight Mounting Torque (TO-264 Package), 4-40 or M3 screw Min Typ Max - - .24 .67 - 6.1 Unit °C/W - g 10 in·lbf 052-6341 Rev F 6 - 2011 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves 120 V = 15V TJ= 125°C 100 TJ= 55°C TJ= 150°C 80 TJ= 25°C 60 40 20 0 1 2 3 4 5 250 9V 200 100 VGE, GATE-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 160 120 80 TJ= 25°C 40 TJ= -55°C TJ= 125°C 0 2 6V 5V 0 4 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25°C) 20 250μs PULSE TEST