APT70GR120B2

APT70GR120B2_L APT70GR120B2 APT70GR120L 1200V, 70A, Vce(on) = 2.5V Typical Ultra Fast NPT - IGBT® The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and ultrafast switching speed. Features • Low Saturation Voltage • Low Tail Current • Short Circuit Withstand Rated • High Frequency Switching • RoHS Compliant • Ultra Low Leakage Current Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is recommended for applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter Ratings Vces Collector Emitter Voltage 1200 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 160 I C2 Continuous Collector Current @ TC = 110°C 70 I CM Pulsed Collector Current 280 SCWT PD TJ,TSTG TL 1 Unit V A Short Circuit Withstand Time: VCE = 600V, VGE = 15V, TC=125°C 10 μs Total Power Dissipation @ TC = 25°C 961 W Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Min V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA) 1200 VGE(TH) Gate Threshold Voltage VCE(ON) I CES Typ Max 5.0 6.5 Collector-Emitter On Voltage (VGE = 15V, I C = 70A, Tj = 25°C) 2.5 3.2 Collector-Emitter On Voltage (VGE = 15V, I C = 70A, Tj = 125°C) 3.3 Collector-Emitter On Voltage (VGE = 15V, I C = 140A, Tj = 25°C) 3.5 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 10 (VCE = VGE, I C = 2.5mA, Tj = 25°C) 3.5 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) I GES 2 Unit Volts 1000 µA ±250 nA 100 Gate-Emitter Leakage Current (VGE = ±20V) Microsemi Website - http://www.microsemi.com 052-6411 Rev A 2-2013 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. DYNAMIC CHARACTERISTICS Symbol APT70GR120B2_L Parameter Test Conditions Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate to Emitter Plateau Voltage Qg Total Gate Charge 3 Qge Gate-Emitter Charge Qgc Gate- Collector Charge td(on) Turn-On Delay Time tr td(off) tf Min Typ Capacitance 7260 VGE = 0V, VCE = 25V 643 f = 1MHz 199 V 412 544 48 62 IC = 70A 204 275 VGE = 15V VCE= 600V Inductive Switching (25°C) 33 Current Rise Time VCC = 600V 48 Turn-Off Delay Time VGE = 15V 278 64 IC = 70A Turn-On Switching Energy RG = 4.3 Ω 3816 5720 Turn-Off Switching Energy TJ = +25°C 2582 3870 td(on) Turn-On Delay Time tr td(off) tf Eon2 4 Inductive Switching (125°C) 33 Current Rise Time VCC = 600V 48 Turn-Off Delay Time VGE = 15V 320 Current Fall Time nC ns Eoff 6 Eon2 5 Unit pF 7.5 Gate Charge Current Fall Time Max µJ ns 74 IC = 70A 5 Turn-On Switching Energy RG = 4.3 Ω Eoff 6 Turn-Off Switching Energy TJ = +125°C 4 5651 8475 3323 4980 Typ Max µJ THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic Min RθJC Junction to Case Thermal Resistance (IGBT) .13 RθJA Junction to Ambient Thermal Resistance 40 B2 WT Package Weight L Unit °C/W .22 oz 6 g .36 oz 10 g 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein. D = 0.9 0.12 0.10 0.7 0.08 0.5 Note: 0.06 0.3 0.04 t1 t2 0.02 0 P DM ZθJC, THERMAL IMPEDANCE (°C/W) 052-6411 Rev A 2-2013 0.14 t Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C 0.1 0.05 10 -5 SINGLE PULSE 10 -4 10-3 10-2 0.1 1 RECTANGULAR PULSE DURATION (SECONDS) Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10 TYPICAL PERFORMANCE CURVES APT70GR120B2_L 140 200 V GE 100 80 60 40 20 0 50 15V 13V 250 9.0V 200 8.5V 150 8.0V 100 7.5V 7V 50 6.5V 0 250µs PULSE TEST