APT75F50L

APT75F50B2 APT75F50L 500V, 75A, 0.075Ω Max, trr ≤310ns N-Channel FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. T-Max® APT75F50B2 TO-264 APT75F50L Single die FREDFET D G S TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI • ZVS phase shifted and other full bridge • Low trr for high reliability • Half bridge • Ultra low Crss for improved noise immunity • PFC and other boost converter • Low gate charge • Buck converter • Avalanche energy rated • Single and two switch forward • RoHS compliant • Flyback Absolute Maximum Ratings Symbol ID Parameter Unit Ratings Continuous Drain Current @ TC = 25°C 75 Continuous Drain Current @ TC = 100°C 47 A IDM Pulsed Drain Current VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 1580 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 37 A 1 230 Thermal and Mechanical Characteristics Max Unit W PD Total Power Dissipation @ TC = 25°C 1040 RθJC Junction to Case Thermal Resistance 0.12 RθCS Case to Sink Thermal Resistance, Flat, Greased Surface TJ,TSTG Operating and Storage Junction Temperature Range TL Soldering Temperature for 10 Seconds (1.6mm from case) WT Package Weight Torque Mounting Torque ( TO-264Package), 4.40 or M3 screw Microsemi Website - http://www.microsemi.com Downloaded from Elcodis.com electronic components distributor 0.11 -55 150 300 °C/W °C 0.22 oz 6.2 g 10 in·lbf 1.1 N·m 5-2007 Typ Rev A Min Characteristic 050-8126 Symbol Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter Test Conditions Min VBR(DSS) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 500 ∆VBR(DSS)/∆TJ Drain-Source On Resistance VGS(th) Gate-Source Threshold Voltage ∆VGS(th)/∆TJ VGS = 10V, ID = 37A 3 Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Dynamic Characteristics Forward Transconductance Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance TJ = 125°C 0.60 0.064 4 -10 0.075 5 250 1000 ±100 Min Test Conditions VDS = 50V, ID = 37A f = 1MHz Co(er) 5 Effective Output Capacitance, Energy Related Typ Max 55 11600 160 1250 VGS = 0V, VDS = 25V Effective Output Capacitance, Charge Related Unit V V/°C Ω V mV/°C µA nA Unit S pF 725 VGS = 0V, VDS = 0V to 333V Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time tf VGS = 0V Max TJ = 25°C unless otherwise specified 4 td(off) TJ = 25°C Typ VGS = ±30V Co(cr) tr VDS = 500V Parameter gfs 3 VGS = VDS, ID = 2.5mA Threshold Voltage Temperature Coefficient IDSS Symbol Reference to 25°C, ID = 250µA Breakdown Voltage Temperature Coefficient RDS(on) APT75F50B2_L Current Rise Time Turn-Off Delay Time 365 290 65 130 45 55 120 39 VGS = 0 to 10V, ID = 37A, VDS = 250V Resistive Switching VDD = 333V, ID = 37A RG = 2.2Ω 6 , VGG = 15V Current Fall Time nC ns Source-Drain Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Irrm Reverse Recovery Current dv/dt Peak Recovery dv/dt Test Conditions Min Typ D MOSFET symbol showing the integral reverse p-n junction diode (body diode) A 230 S 1.0 310 570 TJ = 25°C TJ = 125°C TJ = 25°C VDD = 100V TJ = 125°C diSD/dt = 100A/µs TJ = 25°C Unit 75 G ISD = 37A, TJ = 25°C, VGS = 0V ISD = 37A 3 Max TJ = 125°C ISD ≤ 37A, di/dt ≤1000A/µs, VDD = 333V, TJ = 125°C 1.48 3.85 11.3 16.6 V ns µC A 20 V/ns 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 050-8126 Rev A 5-2007 2 Starting at TJ = 25°C, L = 2.31mH, RG = 2.2Ω, IAS = 37A. 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -1.65E-7/VDS^2 + 5.51E-8/VDS + 2.03E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. Downloaded from Elcodis.com electronic components distributor 300 V GS = 10V J TJ = -55°C 200 TJ = 25°C 150 100 TJ = 150°C 50 ID, DRIAN CURRENT (A) 100 80 6V 60 5.5V 40 5V 20 TJ = 125°C 0 25 20 15 10 5 0 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 0 30 25 20 15 10 5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics 250 NORMALIZED TO VDS> ID(ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @