TYPICAL PERFORMANCE CURVES
®
1200V APT75GN120B2_L(G)
APT75GN120B2
APT75GN120L
APT75GN120B2G* APT75GN120LG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplifies gate drive design and minimizes losses.
(B2)
T-Max®
TO-264
(L)
• 1200V Field Stop
• Trench Gate: Low VCE(on)
• Easy Paralleling
• Intergrated Gate Resistor: Low EMI, High Reliability
C
G
E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT75GN120B2_L(G)
VCES
Collector-Emitter Voltage
1200
VGE
Gate-Emitter Voltage
±30
I C1
Continuous Collector Current
I C2
Continuous Collector Current @ TC = 110°C
I CM
Pulsed Collector Current
SSOA
PD
TJ,TSTG
TL
1
8
@ TC = 25°C
UNIT
Volts
200
99
Amps
225
@ TC = 150°C
225A @ 1200V
Switching Safe Operating Area @ TJ = 150°C
833
Total Power Dissipation
Operating and Storage Junction Temperature Range
Watts
-55 to 150
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
°C
300
STATIC ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 3mA)
VGE(TH)
Gate Threshold Voltage
VCE(ON)
I CES
I GES
RG(int)
MAX
5.0
5.8
6.5
1.4
1.7
2.1
Units
1200
(VCE = VGE, I C = 3mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C)
TYP
2.0
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C)
Volts
100
2
Gate-Emitter Leakage Current (VGE = ±20V)
600
10
Intergrated Gate Resistor
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
TBD
nA
Ω
10-2005
V(BR)CES
MIN
Rev C
Characteristic / Test Conditions
050-7607
Symbol
APT75GN120B2_L(G)
DYNAMIC CHARACTERISTICS
Symbol
Test Conditions
Characteristic
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VGEP
Gate-to-Emitter Plateau Voltage
Qg
Total Gate Charge
3
Gate-Emitter Charge
Qgc
Gate-Collector ("Miller ") Charge
td(on)
tr
td(off)
tf
Eon1
Eon2
tr
td(off)
tf
9.0
VGE = 15V
425
Turn-on Switching Energy (Diode)
8045
TJ = +25°C
Inductive Switching (125°C)
60
VCC = 800V
41
VGE = 15V
725
RG = 1.0Ω 7
200
8620
I C = 75A
Current Fall Time
Turn-off Switching Energy
µJ
9620
7640
Turn-off Delay Time
44
Turn-on Switching Energy (Diode)
ns
110
RG = 1.0Ω 7
Current Rise Time
Turn-on Switching Energy
nC
620
6
Eon2
V
A
41
5
pF
225
I C = 75A
Turn-on Switching Energy
UNIT
245
VCC = 800V
4
MAX
30
VGE = 15V
Eon1
Eoff
Gate Charge
60
Current Fall Time
Turn-on Delay Time
210
Inductive Switching (25°C)
Turn-off Delay Time
td(on)
275
f = 1 MHz
15V, L = 100µH,VCE = 1200V
Current Rise Time
Turn-off Switching Energy
VGE = 0V, VCE = 25V
TJ = 150°C, R G = 4.3Ω 7, VGE =
Turn-on Delay Time
Eoff
4800
I C = 75A
Switching Safe Operating Area
TYP
Capacitance
VCE = 600V
Qge
SSOA
MIN
55
TJ = +125°C
ns
µJ
13000
66
11400
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
RθJC
Junction to Case (IGBT)
.15
RθJC
Junction to Case (DIODE)
N/A
WT
Package Weight
5.9
UNIT
°C/W
gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
050-7607
Rev C
10-2005
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452)
8 Current limited by lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
TJ = -55°C
120
TJ = 25°C
100
TJ = 125°C
80
60
40
20
0
IC, COLLECTOR CURRENT (A)
120
100
TJ = -55°C
80
TJ = 25°C
TJ = 125°C
60
40
20
0
0
10V
80
60
9V
40
8V
20
7V
FIGURE 2, Output Characteristics (TJ = 125°C)
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
250µs PULSE
TEST
