APT75GN60BG

APT75GN60B(G) 600V TYPICAL PERFORMANCE CURVES APT75GN60B APT75GN60BG* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses. TO -2 47 G C E • 600V Field Stop • • • • Trench Gate: Low VCE(on) Easy Paralleling 6µs Short Circuit Capability Intergrated Gate Resistor: Low EMI, High Reliability C G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT75GN60B(G) VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current I C2 Continuous Collector Current @ TC = 110°C I CM Pulsed Collector Current SSOA PD TJ,TSTG TL 8 @ TC = 25°C UNIT Volts 155 93 1 Amps 225 225A @ 600V Switching Safe Operating Area @ TJ = 175°C 536 Total Power Dissipation Operating and Storage Junction Temperature Range Watts -55 to 175 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) 600 VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES RG(int) (VCE = VGE, I C = 1mA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) TYP MAX 5.0 5.8 6.5 1.05 1.45 1.85 25 2 600 4 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com µA TBD Gate-Emitter Leakage Current (VGE = ±20V) Intergrated Gate Resistor Volts 1.87 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) Units nA Ω 9-2005 MIN Rev A Characteristic / Test Conditions 050-7619 Symbol APT75GN60B(G) DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage 3 Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge SSOA SCSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf 150 Gate Charge 9.5 VGE = 15V 485 VGE = µs VCC = 400V 48 38 RG = 1.0Ω 7 2500 TJ = +25°C 2140 Turn-on Delay Time Inductive Switching (125°C) 47 VCC = 400V 48 Current Rise Time Turn-off Delay Time VGE = 15V 430 RG = 1.0Ω 7 55 2600 I C = 75A Current Fall Time 44 Turn-on Switching Energy (Diode) µJ 3725 6 Turn-on Switching Energy ns 385 I C = 75A Eon2 nC 6 VGE = 15V Turn-on Switching Energy (Diode) V A 47 5 pF 225 Inductive Switching (25°C) 4 UNIT 270 7, VCC = 600V, VGE = 15V, Current Fall Time MAX 30 TJ = 125°C, R G = 4.3Ω 7 Turn-off Delay Time Turn-off Switching Energy 370 f = 1 MHz 15V, L = 100µH,VCE = 600V Current Rise Time Eon1 Eoff VGE = 0V, VCE = 25V TJ = 175°C, R G = 4.3Ω Turn-on Delay Time Turn-off Switching Energy 4500 I C = 75A Short Circuit Safe Operating Area TYP Capacitance VCE = 300V Switching Safe Operating Area Turn-on Switching Energy MIN 55 TJ = +125°C ns 4525 66 µJ 2585 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RθJC Junction to Case (IGBT) .28 RθJC Junction to Case (DIODE) N/A WT Package Weight 5.9 UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 050-7619 Rev A 9-2005 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) 8 Continuous current limited by package pin temperature to 100A. APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES = 15V 12V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 120 100 TJ = 25°C 80 TJ = 125°C 60 TJ = 175°C 40 TJ = -55°C 20 0 IC, COLLECTOR CURRENT (A) TJ = -55°C 120 TJ = 25°C 100 TJ = 125°C 80 60 40 TJ = 175°C 20 0 0 10V 100 9V 50 8V 7V FIGURE 2, Output Characteristics (TJ = 125°C) 16 VGE, GATE-TO-EMITTER VOLTAGE (V) 250µs PULSE TEST