APT75GP120JDQ3

APT75GP120JDQ3 1200V TYPICAL PERFORMANCE CURVES APT75GP120JDQ3 ® E E POWER MOS 7 IGBT ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • 50 kHz operation @ 800V, 20A • Low Gate Charge • 20 kHz operation @ 800V, 44A • Ultrafast Tail Current shutoff • RBSOA Rated C G ISOTOP ® S OT 22 7 "UL Recognized" file # E145592 C G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT75GP120JDQ3 VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage ±20 I C1 Continuous Collector Current @ TC = 25°C 128 I C2 Continuous Collector Current @ TC = 110°C 57 I CM RBSOA PD TJ,TSTG TL Pulsed Collector Current 1 UNIT Volts Amps 300 @ TC = 150°C Reverse Bias Safe Operating Area @ TJ = 150°C 300A @ 960V Total Power Dissipation Watts 543 Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1250µA) VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES 3 Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 125°C) 4.5 6 3.3 3.9 Units Volts 3.0 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) MAX 1200 (VCE = VGE, I C = 2.5mA, Tj = 25°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) TYP 1250 2 Gate-Emitter Leakage Current (VGE = ±20V) 5500 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com µA nA 10-2005 V(BR)CES MIN Rev A Characteristic / Test Conditions 050-7458 Symbol DYNAMIC CHARACTERISTICS Symbol APT75GP120JDQ3 Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage 3 Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge RBSOA td(on) tr td(off) tf Eon1 80 Gate Charge 7.5 VGE = 15V 320 1620 2500 Inductive Switching (125°C) 20 VCC = 600V 40 VGE = 15V 245 RG = 5Ω 115 1620 I C = 75A Eon1 Turn-on Switching Energy Eon2 Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy 44 55 µJ 4100 6 Current Fall Time ns 55 TJ = +25°C Turn-off Delay Time nC 165 RG = 5Ω Current Rise Time V A 40 I C = 75A Turn-on Delay Time pF 300 20 5 UNIT 140 VCC = 600V 4 MAX 50 Inductive Switching (25°C) Current Fall Time Turn-off Switching Energy tf f = 1 MHz TJ = 150°C, R G = 5Ω, VGE = Turn-off Delay Time Eoff td(off) 460 VGE = 15V Turn-on Switching Energy (Diode) tr VGE = 0V, VCE = 25V 15V, L = 100µH,VCE = 960V Current Rise Time Eon2 td(on) 7035 I C = 75A Turn-on Delay Time TYP Capacitance VCE = 600V Reverse Bias Safe Operating Area Turn-on Switching Energy MIN TJ = +125°C ns µJ 5850 6 4820 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RθJC Junction to Case (IGBT) .23 RθJC Junction to Case (DIODE) .56 WT VIsolation Package Weight 29.2 RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) 2500 UNIT °C/W gm Volts 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 050-7458 Rev A 10-2005 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES 80 TJ = 25°C TJ = 125°C 40 20 0 1 2 3 4 5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) TJ = 25°C TJ = 125°C 50 0 5 2 3 4 5 6 7 8 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics IC = 150A TJ = 25°C. 250µs PULSE TEST