APT7F100B
APT7F100S
1000V, 7A, 2.0Ω Max
N-Channel FREDFET
TO
-2
POWER MOS 8® is a high speed, high voltage N-channel switch-mode power
MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced
trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a
greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching
loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control di/dt during switching, resulting in low EMI and reliable paralleling, even
when switching at very high frequency.
47
D3PAK
APT7F100B
APT7F100S
Single die FREDFET
D
G
S
FEATURES
TYPICAL APPLICATIONS
• Fast switching with low EMI
• ZVS phase shifted and other full bridge
• Low trr for high reliability
• Half bridge
• Ultra low Crss for improved noise immunity
• PFC and other boost converter
• Low gate charge
• Buck converter
• Avalanche energy rated
• Single and two switch forward
• RoHS compliant
• Flyback
Absolute Maximum Ratings
Symbol
ID
Parameter
Ratings
Continuous Drain Current @ TC = 25°C
7
Continuous Drain Current @ TC = 100°C
5
27
Unit
A
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy 2
415
mJ
IAR
Avalanche Current, Repetitive or Non-Repetitive
4
A
1
Thermal and Mechanical Characteristics
Min
PD
Total Power Dissipation @ TC = 25°C
RθJC
RθCS
Max
Unit
290
W
Junction to Case Thermal Resistance
0.43
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
-55
150
TL
Soldering Temperature for 10 Seconds (1.6mm from case)
300
WT
Package Weight
TJ,TSTG
Torque
Mounting Torque ( TO-247 Package), 6-32 or M3 screw
Microsemi Website - http://www.microsemi.com
Typ
0.15
°C/W
°C
0.22
oz
6.2
g
10
in·lbf
1.1
N·m
050-8166 Rev B 05-2009
Characteristic
Symbol
Static Characteristics
TJ = 25°C unless otherwise specified
Test Conditions
Symbol
Parameter
VBR(DSS)
Drain-Source Breakdown Voltage
∆VBR(DSS)/∆TJ
RDS(on)
VGS(th)
∆VGS(th)/∆TJ
Gate-Source Threshold Voltage
Zero Gate Voltage Drain Current
IGSS
Gate-Source Leakage Current
Dynamic Characteristics
Symbol
gfs
VGS = VDS, ID = 0.5mA
Threshold Voltage Temperature Coefficient
IDSS
Parameter
Ciss
Coss
Output Capacitance
VGS = 0V
TJ = 125°C
Co(er)
5
Effective Output Capacitance, Energy Related
Max
Typ
2.0
5
mV/°C
250
1000
±100
Max
7.5
1800
25
158
65
33
58
10
27
24
26
77
22
Min
Typ
Unit
V
V/°C
Ω
V
µA
nA
Unit
S
pF
VGS = 0V, VDS = 0V to 670V
Total Gate Charge
VGS = 0 to 10V, ID = 4A,
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(on)
Turn-On Delay Time
Resistive Switching
Current Rise Time
VDD = 670V, ID = 4A
tf
f = 1MHz
Effective Output Capacitance, Charge Related
td(off)
VGS = 0V, VDS = 25V
4
tr
Min
Test Conditions
VDS = 50V, ID = 4A
Co(cr)
Qg
TJ = 25°C
TJ = 25°C unless otherwise specified
Input Capacitance
Reverse Transfer Capacitance
VDS = 1000V
VGS = ±30V
Forward Transconductance
Crss
1.15
1.76
2.5
4
-10
VGS = 10V, ID = 4A
3
Typ
1000
Reference to 25°C, ID = 250µA
Breakdown Voltage Temperature Coefficient
Drain-Source On Resistance
Min
VGS = 0V, ID = 250µA
APT7F100B_S
VDS = 500V
RG = 10Ω 6 , VGG = 15V
Turn-Off Delay Time
Current Fall Time
nC
ns
Source-Drain Diode Characteristics
Symbol
IS
ISM
VSD
Continuous Source Current
(Body Diode)
(Body Diode) 1
Qrr
Reverse Recovery Charge
Irrm
Reverse Recovery Current
Peak Recovery dv/dt
S
TJ = 25°C
TJ = 125°C
ISD = 4A 3
diSD/dt = 100A/µs
VDD = 100V
Max
7
27
133
209
.56
1.2
7
9
1.3
152
251
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
ISD ≤ 4A, di/dt ≤1000A/µs, VDD =
500V,
TJ = 125°C
25
Unit
A
G
ISD = 4A, TJ = 25°C, VGS = 0V
Diode Forward Voltage
Reverse Recovery Time
D
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
Pulsed Source Current
trr
dv/dt
Test Conditions
Parameter
V
ns
µC
A
V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 53mH, RG = 25Ω, IAS = 4A.
050-8166 Rev B 05-2009
3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -3.43E-8/VDS^2 + 1.44E-8/VDS + 5.38E-11.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
V
GS
= 10V
J
V
16
TJ = -55°C
14
12
10
TJ = 25°C
8
6
4
0
TJ = 125°C
4
5V
3
2
0
0
5
10
15
20
25
30
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
4.5V
0
NORMALIZED TO
VGS = 10V @ 4A
2.0
1.5
1.0
15
TJ = -55°C
TJ = 25°C
10
TJ = 125°C
C, CAPACITANCE (pF)
TJ = 25°C
6
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
Ciss
1,000
TJ = -55°C
8
0
3,000
TJ = 125°C
4
100
Coss
10
2
Crss
0
1
2
3
4
ID, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
200
400
600
800
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
12
VDS = 200V
10
VDS = 500V
8
6
VDS = 800V
4
2
0
0
30
ID = 4A
14
0
1
5
10 20 30 40 50 60 70 80
Qg, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
ISD, REVERSE DRAIN CURRENT (A)
gfs, TRANSCONDUCTANCE
VGS, GATE-TO-SOURCE VOLTAGE (V)
20
0
0
-55 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3, RDS(ON) vs Junction Temperature
16
250µSEC. PULSE TEST
@ ID(ON) x RDS(ON) MAX.
25
ID, DRAIN CURRENT (A)
2.5
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
30
10
5
1
TJ = 150°C
3.0
= 6, 7, 8 & 9V
GS
6
Figure 1, Output Characteristics
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
T = 125°C
7
2
APT7F100B_S
25
20
TJ = 25°C
15
TJ = 150°C
10
5
0
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
050-8166 Rev B 05-2009
ID, DRAIN CURRENT (A)
18
8
ID, DRIAN CURRENT (A)
20
100µs
1ms
Rds(on)
10ms
1
IDM
10
Rds(on)
13µs
100µs
1
Scaling for Different Case & Junction
Temperatures:
ID = ID(T = 25°C)*(TJ - TC)/125
DC line
0.1
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
1ms
10ms
100ms
DC line
TJ = 150°C
TC = 25°C
100ms
TJ = 125°C
TC = 75°C
1
ID, DRAIN CURRENT (A)
13µs
ID, DRAIN CURRENT (A)
IDM
10
0.1
APT7F100B_S
50
50
C
1
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Maximum Forward Safe Operating Area
0.40
D = 0.9
0.7
0.30
Note:
0.5
0.20
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.50
t1
0.3
t2
0.10
0
t1 = Pulse Duration
SINGLE PULSE
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.1
0.05
10-5
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
1.0
D3PAK Package Outline
TO-247 (B) Package Outline
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
(Heat Sink)
e1 100% Sn Plated
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05(.632)
Revised
4/18/95
Drain
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022) {3 Plcs}
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
050-8166 Rev B 05-2009
13.41 (.528)
13.51(.532)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
Gate
Drain
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Source
Drain
Gate
Dimensions in Millimeters (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
