APT8014L2FLLG

800V 52A APT8014L2FLL *G POWER MOS 7 R 0.16Ω Ω APT8014L2FLLG* Denotes RoHS Compliant, Pb Free Terminal Finish. FREDFET TO-264 Max ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with Microsemi's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Increased Power Dissipation • Easier To Drive • Lower Gate Charge, Qg • Popular TO-264 MAX Package D G S • FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT8014L2FLL(G) UNIT 800 Volts Drain-Source Voltage 52 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 893 Watts Linear Derating Factor 7.14 W/°C PD TJ,TSTG 208 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR EAS 1 -55 to 150 Amps 52 1 Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Volts 50 4 mJ 3200 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 800 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, 26A) TYP MAX UNIT Volts 0.160 Ohms Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 5mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com Downloaded from Elcodis.com electronic components distributor µA 5-2006 Characteristic / Test Conditions 050-7104 Rev B Symbol DYNAMIC CHARACTERISTICS Symbol APT8014L2FLL(G) Characteristic Ciss Test Conditions Input Capacitance Coss VGS = 0V Output Capacitance VDS = 25V C rss Reverse Transfer Capacitance f = 1 MHz Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr 3 RESISTIVE SWITCHING VGS = 15V VDD = 400V ID = 52A @ 25°C RG = 0.6Ω 15 INDUCTIVE SWITCHING @ 25°C Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 6 1091 Eon Turn-on Switching Energy Eoff Turn-off Switching Energy VDD = 533V, VGS = 15V nC ns 1135 ID = 52A, RG = 3Ω INDUCTIVE SWITCHING @ 125°C 6 µJ 1662 VDD = 533V VGS = 15V ID = 52A, RG = 3Ω UNIT pF 248 285 30 170 20 19 69 VDD = 400V Fall Time MAX 7238 1402 ID = 52A @ 25°C Turn-off Delay Time tf TYP VGS = 10V Rise Time td(off) MIN 1383 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 (Body Diode) 208 VSD Diode Forward Voltage 2 (VGS = 0V, IS = -52A) 1.3 Volts 18 V/ns dv/ Peak Diode Recovery dt dv/ dt 52 5 t rr Reverse Recovery Time (IS = -52A, di/dt = 100A/µs) Tj = 25°C 440 Tj = 125°C 1100 Q rr Reverse Recovery Charge (IS = -52A, di/dt = 100A/µs) Tj = 25°C 2.0 Tj = 125°C 13 IRRM Peak Recovery Current (IS = -52A, di/dt = 100A/µs) Tj = 25°C 15 Tj = 125°C 30 Amps ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX 0.14 RθJC Junction to Case RθJA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.14 0.9 0.12 0.7 Note: 0.5 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7104 Rev B 5-2006 0.16 0.08 0.06 0.3 0.04 0 t1 t2 Duty Factor D = t1/t2 0.02 Peak TJ = PDM x ZθJC + TC 0.1 0.05 10-5 SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Downloaded from Elcodis.com electronic components distributor °C/W 4 Starting Tj = +25°C, L = 2.37mH, RG = 25Ω, Peak IL = 52A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID52A di/dt ≤ 700A/µs VR ≤ 800V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.10 UNIT 1.0 Typical Performance Curves 0.0509 0.0894 Dissipated Power (Watts) 0.0522 0.988 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. ID, DRAIN CURRENT (AMPERES) TC ( C) ZEXT TJ ( C) 100 80 TJ = -55°C 60 TJ = +25°C 40 20 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 80 6V 60 5.5V 40 5V 20 1.40 NORMALIZED TO V = 10V @ 26A GS 1.30 1.20 VGS=10V 1.10 1.00 VGS=20V 0.90 0.80 0 30 20 10 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE D 1.05 1.00 0.95 0.90 = 26A GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE Downloaded from Elcodis.com electronic components distributor VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) I 1.10 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 2.5 V 20 40 60 80 100 120 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 5-2006 ID, DRAIN CURRENT (AMPERES) 40 0 25 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 6.5V 100 1.15 60 50 8V 7V 050-7104 Rev B 0 TJ = +125°C VGS =15 & 10V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) 120 VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @