APT8015JVFR

APT8015JVFR 44A 0.150Ω Ω 800V POWER MOS V ® S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. 27 2 T- D G SO "UL Recognized" ISOTOP ® • Fast Recovery Body Diode • 100% Avalanche Tested D FREDFET • Lower Leakage • Popular SOT-227 Package G • Faster Switching S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT8015JVFR UNIT 800 Volts Drain-Source Voltage 44 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 700 Watts Linear Derating Factor 5.6 W/°C VGSM PD TJ,TSTG 176 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 44 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 50 4 mJ 3600 STATIC ELECTRICAL CHARACTERISTICS ID(on) RDS(on) IDSS IGSS VGS(th) MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 800 Volts 44 Amps On State Drain Current 2 (VDS > ID(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) TYP MAX 0.150 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA) Downloaded from Elcodis.com electronic components distributor Ohms µA ±100 nA 4 Volts 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 1-2005 BVDSS Characteristic / Test Conditions 050-5600 Rev B Symbol DYNAMIC CHARACTERISTICS Symbol APT8015JVFR Test Conditions Characteristic MIN TYP MAX Ciss Input Capacitance VGS = 0V 14715 17650 Coss Output Capacitance VDS = 25V 1470 2050 Crss Reverse Transfer Capacitance f = 1 MHz 794 1190 Qg Total Gate Charge VGS = 10V 690 1035 Qgs Gate-Source Charge VDD = 0.5 VDSS Qgd Gate-Drain ("Miller") Charge ID = ID [Cont.] @ 25°C 75 275 110 410 VGS = 15V 22 44 t d(on) 3 Turn-on Delay Time tr Rise Time t d(off) Turn-off Delay Time tf VDD = 0.5 VDSS 20 40 ID = ID [Cont.] @ 25°C 97 145 RG = 0.6Ω 15 30 TYP MAX Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions IS ISM Pulsed Source Current VSD Diode Forward Voltage dv/ MIN 44 Continuous Source Current (Body Diode) Peak Diode Recovery dt 1 2 dv/ 176 (Body Diode) dt UNIT Amps (VGS = 0V, IS = -ID [Cont.]) 1.3 Volts 5 18 V/ns t rr Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 300 Tj = 125°C 600 Q rr Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 2.5 Tj = 125°C 17.7 IRRM Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 16.1 Tj = 125°C 36.2 ns µC Amps THERMAL / PACKAGE CHARACTERISTICS Symbol Characteristic MIN TYP MAX 0.18 RθJC Junction to Case RθJA Junction to Ambient 40 VIsolation RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Torque Maximum Torque for Device Mounting Screws and Electrical Terminations. 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 2500 13 0.2 0.1 0.01 0.005 0.05 Note: 0.02 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-5600 Rev B 1-2005 0.2 0.05 0.01 SINGLE PULSE 0.0005 10-5 t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.001 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Downloaded from Elcodis.com electronic components distributor lb•in 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 3.72mH, R = 25Ω, Peak I = 44A j G L 5 I ≤ -I [Cont.], di/ = 100A/µs, V S D DD - VDSS, Tj - 150°C, RG = 2.0Ω, dt VR = 200V D=0.5 °C/W Volts APT Reserves the right to change, without notice, the specifications and information contained herein. 0.1 UNIT APT8015JVFR 100 100 VGS=6.5V,7V,10V & 15V 6V 80 60 5.5V 40 5V 20 ID, DRAIN CURRENT (AMPERES) 6V 80 60 5.5V 40 5V 20 4.5V 4.5V 0 0 80 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @