APT8020LLLG

APT8020B2LL APT8020LLL 800V 38A 0.200Ω B2LL POWER MOS 7 R MOSFET T-MAX™ TO-264 ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg VDSS ID D • Increased Power Dissipation • Easier To Drive • Popular T-MAX™ or TO-264 Package MAXIMUM RATINGS Symbol LLL G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT8020B2LL_LLL UNIT 800 Volts Drain-Source Voltage 38 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 694 Watts Linear Derating Factor 5.56 W/°C PD TJ,TSTG 152 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR EAS 1 -55 to 150 Amps 38 1 Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Volts 50 4 mJ 3000 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 800 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 19A) TYP MAX Volts 0.200 Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C) 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) Downloaded from Elcodis.com electronic components distributor Ohms µA ±100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 7-2004 Characteristic / Test Conditions 050-7063 Rev C Symbol DYNAMIC CHARACTERISTICS Symbol APT8020B2LL_LLL Test Conditions Characteristic MIN TYP Ciss Input Capacitance Coss Output Capacitance VDS = 25V 1000 Reverse Transfer Capacitance f = 1 MHz 190 VGS = 10V 195 VDD = 400V 27 Crss Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time tr ID = 38A @ 25°C tf 14 VDD = 400V RG = 0.6Ω Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 9 INDUCTIVE SWITCHING @ 25°C 6 875 VDD = 533V, VGS = 15V ID = 38A, RG = 5Ω 825 INDUCTIVE SWITCHING @ 125°C 6 ns 39 ID = 38A @ 25°C Fall Time nC 12 VGS = 15V Turn-off Delay Time pF 130 RESISTIVE SWITCHING Rise Time td(off) UNIT 5200 VGS = 0V 3 MAX µJ 1450 VDD = 533V, VGS = 15V ID = 38A, RG = 5Ω 985 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN Characteristic / Test Conditions TYP MAX 38 UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -38A, dl S/dt = 100A/µs) 920 ns Q Reverse Recovery Charge (IS = -38A, dl S/dt = 100A/µs) 20.7 µC rr dv/ dt Peak Diode Recovery dv/ 152 (Body Diode) 1.3 (VGS = 0V, IS = -38A) dt Amps Volts 10 V/ns MAX UNIT 5 THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP 0.18 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 4.16mH, RG = 25Ω, Peak IL = 38A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID38A di/dt ≤ 700A/µs VR ≤ 800 TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.9 0.7 0.12 0.5 Note: 0.08 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7063 Rev C 7-2004 0.20 0.16 0.3 0.04 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.05 0 10-5 t1 t2 SINGLE PULSE 0.1 10-4 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Downloaded from Elcodis.com electronic components distributor 10-3 °C/W 10-2 1.0 Typical Performance Curves APT8020B2LL_LLL 100 0.0271 Power (watts) 0.0656 0.0860 0.00899F 0.0202F 0.293F ID, DRAIN CURRENT (AMPERES) RC MODEL Junction temp. (°C) 8V VGS =15 &10 V 80 7V 60 6.5V 40 6V 20 5.5V Case temperature. (°C) 5V 80 60 TJ = +125°C 40 TJ = -55°C TJ = +25°C 20 0 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 35 30 25 20 15 10 5 0 25 I D V D 1.20 VGS=10V 1.10 1.00 VGS=20V 0.90 0.80 0 10 20 30 40 50 60 70 80 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 = 19A GS = 10V 2.0 1.5 1.0 0.5 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Downloaded from Elcodis.com electronic components distributor VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 NORMALIZED TO = 10V @ I = 19A GS 1.30 1.15 40 0.0 -50 V 1.1 1.0 0.9 0.8 7-2004 100 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @