APT8052BFLLG

APT8052BFLL APT8052SFLL 800V 15A POWER MOS 7 R FREDFET 0.520Ω BFLL D3PAK ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg SFLL • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol TO-247 D G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT8052BFLL_SFLL UNIT Drain-Source Voltage 800 Volts ID Continuous Drain Current @ TC = 25°C 15 IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 298 Watts Linear Derating Factor 2.38 W/°C VDSS PD TJ,TSTG 1 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS 1 Amps 60 -55 to 150 °C 300 Amps 15 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts 30 4 mJ 1210 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 800 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 7.5A) TYP MAX UNIT Volts 0.520 Ohms Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 1mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com µA 7-2004 Characteristic / Test Conditions 050-7059 Rev B Symbol APT8052BFLL_SFLL DYNAMIC CHARACTERISTICS Symbol Characteristic Ciss Test Conditions Input Capacitance Coss VGS = 0V Output Capacitance VDS = 25V Crss Reverse Transfer Capacitance f = 1 MHz Qg 3 Total Gate Charge Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time RESISTIVE SWITCHING VGS = 15V VDD = 400V tf ID = 15A @ 25°C Fall Time Turn-on Switching Energy Eoff Turn-off Switching Energy INDUCTIVE SWITCHING @ 25°C 6 Eon Turn-on Switching Energy Eoff Turn-off Switching Energy ns 215 VDD = 533V, VGS = 15V 90 ID = 15A, RG = 5Ω INDUCTIVE SWITCHING @ 125°C 6 nC 7 RG = 1.6Ω Eon UNIT pF 60 75 11 50 9 6 23 ID = 15A @ 25°C Turn-off Delay Time MAX 2035 405 VDD = 400V Rise Time td(off) TYP VGS = 10V Qgs tr MIN µJ 420 VDD = 533V VGS = 15V ID = 15A, RG = 5Ω 110 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD dv/ Characteristic / Test Conditions MIN TYP MAX 15 Continuous Source Current (Body Diode) Amps Pulsed Source Current 1 (Body Diode) 60 Diode Forward Voltage 2 (VGS = 0V, IS = -15A) 1.3 Volts 18 V/ns Peak Diode Recovery dt UNIT dv/ 5 dt t rr Reverse Recovery Time (IS = -15A, di/dt = 100A/µs) Tj = 25°C 200 Tj = 125°C 350 Q rr Reverse Recovery Charge (IS = -15A, di/dt = 100A/µs) Tj = 25°C 0.69 Tj = 125°C 2.66 IRRM Peak Recovery Current (IS = -15A, di/dt = 100A/µs) Tj = 25°C 8 Tj = 125°C 14 ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX 0.42 RθJC Junction to Case RθJA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.9 0.35 0.7 0.25 0.5 0.20 Note: 0.15 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7059 Rev B 7-2004 0.45 0.30 0.3 0.10 0 Duty Factor D = t1/t2 0.1 Peak TJ = PDM x ZθJC + TC 0.05 10-5 t1 t2 SINGLE PULSE 0.05 10-4 10-3 °C/W 4 Starting Tj = +25°C, L = 10.76mH, RG = 25Ω, Peak IL = 15A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID15A di/dt ≤ 700A/µs VR ≤ 800 TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.40 UNIT 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves APT8052BFLL_SFLL RC MODEL Junction temp. (°C) 0.164 0.00592F Power (watts) 0.257 0.125F ID, DRAIN CURRENT (AMPERES) 40 Case temperature. (°C) 35 30 7V 25 6.5V 20 15 6V 10 5.5V 5 5V VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @