APT8052BLLG

APT8052BLL APT8052SLL 800V 15A POWER MOS 7 R MOSFET BLL D3PAK ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg VDSS ID TO-247 SLL D • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS Symbol 0.520Ω G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT8052BLL_SLL UNIT 800 Volts Drain-Source Voltage 15 Continuous Drain Current @ TC = 25°C Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 298 Watts Linear Derating Factor 2.38 W/°C PD TJ,TSTG 1 60 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 1 Volts -55 to 150 °C 300 Amps 15 (Repetitive and Non-Repetitive) 1 30 4 mJ 1210 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 800 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 7.5A) TYP MAX Volts 0.52 Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C) 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) Ohms µA ±100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 6-2004 Characteristic / Test Conditions 050-7058 Rev B Symbol DYNAMIC CHARACTERISTICS APT8052BLL_SLL Test Conditions Characteristic Symbol MIN TYP Ciss Input Capacitance Coss Output Capacitance VDS = 25V 405 Reverse Transfer Capacitance f = 1 MHz 60 VGS = 10V 75 VDD = 400V 11 Crss Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time tr ID = 15A @ 25°C tf 6 VDD = 400V RG = 1.6Ω Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 7 INDUCTIVE SWITCHING @ 25°C 6 215 VDD = 533V, VGS = 15V ID = 15A, RG = 5Ω 90 INDUCTIVE SWITCHING @ 125°C 6 ns 23 ID = 15A @ 25°C Fall Time nC 9 VGS = 15V Turn-off Delay Time pF 50 RESISTIVE SWITCHING Rise Time td(off) UNIT 2035 VGS = 0V 3 MAX µJ 420 VDD = 533V, VGS = 15V ID = 15A, RG = 5Ω 110 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN Characteristic / Test Conditions TYP MAX 15 UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -15A, dl S/dt = 100A/µs) 650 ns Q Reverse Recovery Charge (IS = -15A, dl S/dt = 100A/µs) 9.0 µC rr dv/ dt Peak Diode Recovery dv/ 60 (Body Diode) 1.3 (VGS = 0V, IS = -15A) dt Amps Volts 10 V/ns MAX UNIT 5 THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP 0.45 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 10.76mH, RG = 25Ω, Peak IL = 15A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID15A di/dt ≤ 700A/µs VR ≤ 800 TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.9 0.35 0.7 0.30 0.25 0.5 0.20 Note: 0.15 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7058 Rev B 6-2004 0.45 0.40 0.3 0.10 0 Duty Factor D = t1/t2 0.1 Peak TJ = PDM x ZθJC + TC 0.05 10-5 t1 t2 SINGLE PULSE 0.05 10-4 10-3 °C/W 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves APT8052BLL_SLL RC MODEL Junction temp. (°C) 0.164 0.00592F Power (watts) 0.257 0.125F ID, DRAIN CURRENT (AMPERES) 40 Case temperature. (°C) 35 30 7V 25 6.5V 20 15 6V 10 5.5V 5 5V 30 25 20 15 TJ = +125°C TJ = -55°C 5 0 TJ = +25°C 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 14 12 10 8 6 4 2 0 25 I D V 1.20 VGS=10V 1.10 1.00 VGS=20V 0.90 0.80 0 5 10 15 20 25 30 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.10 1.05 1.00 0.95 0.90 -50 = 7.5A GS = 10V 1.5 1.0 0.5 0.0 -50 D -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 NORMALIZED TO = 10V @ I = 7.5A GS 1.30 1.15 16 2.0 V 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 6-2004 10 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 050-7058 Rev B ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @