APT8065BVFRG

APT8065BVFR 13A 0.650Ω 800V POWER MOS V ® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode TO-247 • 100% Avalanche Tested D FREDFET • Lower Leakage • Popular TO-247 Package G • Faster Switching S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT8065BVFR UNIT 800 Volts Drain-Source Voltage 13 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 280 Watts Linear Derating Factor 2.24 W/°C VGSM PD TJ,TSTG 52 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 13 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 30 mJ 4 1210 STATIC ELECTRICAL CHARACTERISTICS BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 800 Volts 13 Amps On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 TYP (VGS = 10V, 0.5 ID[Cont.]) MAX 0.65 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 UNIT Ohms µA Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 4 Volts Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA APT Website - http://www.advancedpower.com 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord 050-5594 Rev B Symbol DYNAMIC CHARACTERISTICS Symbol APT8065BVFR Test Conditions Characteristic MIN TYP MAX Ciss Input Capacitance VGS = 0V 3050 3700 Coss Output Capacitance VDS = 25V 300 420 Crss Reverse Transfer Capacitance f = 1 MHz 150 225 VGS = 10V 150 225 VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C 17 70 25 105 VGS = 15V 12 24 VDD = 0.5 VDSS 11 22 ID = ID [Cont.] @ 25°C 60 90 RG = 1.6Ω 12 24 TYP MAX Qg 3 Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge t d(on) Turn-on Delay Time tr Rise Time t d(off) Turn-off Delay Time tf Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN 13 Continuous Source Current (Body Diode) IS ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 dv/ dt Peak Diode Recovery dv/dt 52 (Body Diode) (VGS = 0V, IS = -ID [Cont.]) 5 UNIT Amps 1.3 Volts 5 V/ns t rr Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 200 Tj = 125°C 350 Q rr Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 0.7 Tj = 125°C 1.8 IRRM Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 11 Tj = 125°C 17 ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX 0.45 RθJC Junction to Case RθJA Junction to Ambient 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 40 VR = 200V. D=0.5 0.2 0.1 0.05 0.01 0.005 0.02 Note: 0.01 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-5594 Rev B 0.5 0.05 SINGLE PULSE t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.001 10-5 10-4 °C/W 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 14.32mH, R = 25Ω, Peak I = 13A j G L 5 I ≤ -I [Cont.], di/ = 100A/µs, V S D DD ≤ VDSS, Tj ≤ 150°C, RG = 2.0Ω, dt APT Reserves the right to change, without notice, the specifications and information contained herein. 0.1 UNIT 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION APT8065BVFR 16 16 VGS=6V, 7V, 10V & 15V 12 4.5V 8 4 4V ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) VGS=5V, 5.5V, 6V, 7V, 10V & 15V VGS=5V & 5.5V 12 4.5V 8 4 4V 0 0 TJ = -55°C VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @