APT80GA60B

APT80GA60B APT80GA60S 600V High Speed PT IGBT TO - 24 7 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT80GA60S poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. Single die IGBT ® FEATURES APT80GA60B D 3 PAK TYPICAL APPLICATIONS • Fast switching with low EMI • ZVS phase shifted and other full bridge • Very Low Eoff for maximum efficiency • Half bridge • Ultra low Cres for improved noise immunity • High power PFC boost • Low conduction loss • Welding • Low gate charge • UPS, solar, and other inverters • Increased intrinsic gate resistance for low EMI • High frequency, high efficiency industrial • RoHS compliant Absolute Maximum Ratings Ratings Unit Collector Emitter Voltage 600 V IC1 Continuous Collector Current @ TC = 25°C 143 IC2 Continuous Collector Current @ TC = 100°C 80 240 Vces Parameter A ICM Pulsed Collector Current VGE Gate-Emitter Voltage 2 ±30 V PD Total Power Dissipation @ TC = 25°C 625 W 1 SSOA Switching Safe Operating Area @ TJ = 150°C TJ, TSTG Operating and Storage Junction Temperature Range TL -55 to 150 Lead Temperature for Soldering: 0.063" from Case for 10 Seconds Static Characteristics Symbol 240A @ 600V °C 300 TJ = 25°C unless otherwise specified Parameter Test Conditions Min VBR(CES) Collector-Emitter Breakdown Voltage VGE = 0V, IC = 1.0mA 600 VCE(on) Collector-Emitter On Voltage VGE(th) Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current IGES Gate-Emitter Leakage Current Max 2.5 VGE = 15V, TJ = 25°C 2.0 IC = 47A TJ = 125°C 1.9 VGE =VCE , IC = 1mA ICES Typ 3 4.5 V 6 VCE = 600V, TJ = 25°C 250 VGE = 0V TJ = 125°C 1000 VGS = ±30V Unit ±100 μA nA Thermal and Mechanical Characteristics Symbol Min Typ Max Unit RθJC Junction to Case Thermal Resistance - - 0.2 °C/W WT Package Weight - 5.9 - g 10 in·lbf Torque Characteristic Mounting Torque (TO-247 Package), 4-40 or M3 screw Microsemi Website - http://www.microsemi.com 052-6323 Rev D 6 - 2011 Symbol Dynamic Characteristics Symbol Parameter Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Qg3 Total Gate Charge Qge Gate-Emitter Charge Qgc SSOA td(on) tr td(off) tf Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time APT80GA60B_S TJ = 25°C unless otherwise specified Test Conditions Min Typ Capacitance 6390 VGE = 0V, VCE = 25V 580 f = 1MHz 63 Gate Charge 230 VGE = 15V 40 VCE= 300V 78 240 Inductive Switching (25°C) VCC = 400V 27 Turn-Off Delay Time VGE = 15V 158 IC = 47A 78 RG = 4.7Ω4 840 Eoff6 Turn-Off Switching Energy TJ = +25°C 751 td(on Turn-On Delay Time Inductive Switching (125°C) 21 Current Rise Time VCC = 400V 31 Turn-Off Delay Time VGE = 15V 194 IC = 47A 132 Eon2 Turn-On Switching Energy RG = 4.7Ω4 1275 Eoff6 Turn-Off Switching Energy TJ = +125°C 1112 tf Current Fall Time nC 23 Turn-On Switching Energy tr pF A L= 100uH, VCE = 600V Eon2 td(off) Unit IC = 47A TJ = 150°C, RG = 4.7Ω4, VGE = 15V, Current Rise Time Current Fall Time Max ns μJ ns μJ 052-6323 Rev D 6 - 2011 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves APT80GA60B_S 150 300 TJ= 125°C = 15V 15V 275 125 TJ= 55°C TJ= 150°C 100 TJ= 25°C 75 50 25 12V 13V 250 225 10V 200 175 150 9V 125 100 75 8V 50 5V 25 360 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VGE, GATE-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 280 240 200 160 120 80 TJ= 25°C 40 TJ= -55°C TJ= 125°C 0 2 4 6 8 10 TJ = 25°C. 250μs PULSE TEST