APT80GA90B

APT80GA90B APT80GA90S 900V High Speed PT IGBT T OPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT80GA90B poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. Single die IGBT ® FEATURES APT80GA90S D 3 PAK TYPICAL APPLICATIONS • Fast switching with low EMI • ZVS phase shifted and other full bridge • Very Low Eoff for maximum efficiency • Half bridge • Ultra low Cres for improved noise immunity • High power PFC boost • Low conduction loss • Welding • Low gate charge • UPS, solar, and other inverters • Increased intrinsic gate resistance for low EMI • High frequency, high efficiency industrial • RoHS compliant Absolute Maximum Ratings Ratings Unit Collector Emitter Voltage 900 V IC1 Continuous Collector Current @ TC = 25°C 145 IC2 Continuous Collector Current @ TC = 100°C 80 ICM Pulsed Collector Current 239 VGE Gate-Emitter Voltage PD Total Power Dissipation @ TC = 25°C 1 2 SSOA Switching Safe Operating Area @ TJ = 150°C TJ, TSTG Operating and Storage Junction Temperature Range TL Symbol ±30 V 625 W 239A @ 900V -55 to 150 Lead Temperature for Soldering: 0.063" from Case for 10 Seconds Static Characteristics A °C 300 TJ = 25°C unless otherwise specified Parameter Test Conditions Min VBR(CES) Collector-Emitter Breakdown Voltage VGE = 0V, IC = 1.0mA 900 VCE(on) Collector-Emitter On Voltage VGE(th) Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current IGES Gate-Emitter Leakage Current Max 3.1 VGE = 15V, TJ = 25°C 2.5 IC = 47A TJ = 125°C 2.2 VGE =VCE , IC = 1mA ICES Typ 3 4.5 V 6 VCE = 900V, TJ = 25°C 250 VGE = 0V TJ = 125°C 1000 VGS = ±30V Unit μA ±100 nA Typ Max Unit Thermal and Mechanical Characteristics Symbol Characteristic Min RθJC Junction to Case Thermal Resistance - - 0.2 °C/W WT Package Weight - 5.9 - g 10 in·lbf Torque Mounting Torque (TO-247 Package), 4-40 or M3 screw Microsemi Website - http://www.microsemi.com 6 - 2011 Vces Parameter 052-6324 Rev C Symbol Dynamic Characteristics Symbol Parameter Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Qg3 Total Gate Charge Qge Gate-Emitter Charge Qgc SSOA td(on) tr td(off) tf Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time APT80GA90B_S TJ = 25°C unless otherwise specified Test Conditions Min Typ Capacitance 4560 VGE = 0V, VCE = 25V 411 f = 1MHz 62 Gate Charge 200 VGE = 15V 30 VCE= 450V 72 239 Inductive Switching (25°C) VCC = 600V 29 Turn-Off Delay Time VGE = 15V 149 IC = 47A 85 RG = 4.7Ω4 1652 Eoff6 Turn-Off Switching Energy TJ = +25°C 1389 td(on Turn-On Delay Time Inductive Switching (125°C) 18 Current Rise Time VCC = 600V 31 Turn-Off Delay Time VGE = 15V 192 IC = 47A 128 Eon2 Turn-On Switching Energy RG = 4.7Ω4 2813 Eoff6 Turn-Off Switching Energy TJ = +125°C 2082 tf Current Fall Time nC 18 Turn-On Switching Energy tr pF A L= 100uH, VCE = 900V Eon2 td(off) Unit IC = 47A TJ = 150°C, RG = 4.7Ω4, VGE = 15V, Current Rise Time Current Fall Time Max ns μJ ns μJ 052-6324 Rev C 6 - 2011 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves V GE = 15V TJ= 125°C IC, COLLECTOR CURRENT (A) TJ= 55°C 80 APT80GA90B_S 350 TJ= 150°C TJ= 25°C 60 40 20 IC, COLLECTOR CURRENT (A) 100 15V 13V 10V 300 250 9V 200 8V 150 7V 100 6V 50 5V 0 1 2 3 4 5 6 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25°C) 250 IC, COLLECTOR CURRENT (A) 0 200 150 100 TJ= 125°C TJ= 25°C 50 TJ= -55°C 4 IC = 94A IC = 47A 3 IC = 23.5A 2 1 0 6 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage VCE = 720V 6 4 2 0 20 40 60 80 100 120 140 160 180 200 GATE CHARGE (nC) FIGURE 4, Gate charge 6 5 4 IC = 94A IC = 47A 3 2 IC = 23.5A 1 0 VGE = 15V. 250μs PULSE TEST