APT80GP60J

APT80GP60J 600V ® POWER MOS 7 IGBT E E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. 27 2 T- C G SO "UL Recognized" • Low Conduction Loss • 100 kHz operation @ 400V, 39A • Low Gate Charge • 50 kHz operation @ 400V, 59A • Ultrafast Tail Current shutoff • SSOA rated ISOTOP ® C G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±20 Gate-Emitter Voltage Transient ±30 I C1 Continuous Collector Current @ TC = 25°C 151 I C2 Continuous Collector Current @ TC = 110°C 68 I CM Pulsed Collector Current VGEM SSOA PD TJ,TSTG TL UNIT APT80GP60J 1 Volts Amps 330 @ TC = 25°C Switching Safe Operating Area @ TJ = 150°C 330A @ 600V 462 Total Power Dissipation Watts -55 to 150 Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS MIN BVCES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA) 600 VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES TYP MAX 4.5 6 Collector-Emitter On Voltage (VGE = 15V, I C = 80A, Tj = 25°C) 2.2 2.7 Collector-Emitter On Voltage (VGE = 15V, I C = 80A, Tj = 125°C) 2.1 3 (VCE = VGE, I C = 2.5mA, Tj = 25°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 1.0 2 Gate-Emitter Leakage Current (VGE = ±20V) UNIT Volts mA 5 ±100 Rev B CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. nA 11-2003 Characteristic / Test Conditions APT Website - http://www.advancedpower.com 050-7426 Symbol APT80GP60J DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage Qg Qge Qgc SSOA Total Gate Charge 3 Gate-Emitter Charge TYP Capacitance 9840 VGE = 0V, VCE = 25V 735 f = 1 MHz 40 Gate Charge VGE = 15V 7.5 280 VCE = 300V 65 I C = 80A 85 Gate-Collector ("Miller ") Charge Switching SOA MIN TJ = 150°C, R G = 5Ω, VGE = MAX UNIT pF V nC 330 A 15V, L = 100µH,VCE = 600V td(on) tr td(off) tf Turn-on Delay Time Current Rise Time Eoff Turn-off Switching Energy td(on) Turn-on Delay Time Eon2 Eoff I C = 80A 78 4 Turn-on Switching Energy (Diode) 5 Eon1 116 µJ 1199 29 VGE = 15V 149 I C = 80A 84 Current Fall Time Turn-off Switching Energy 1536 Inductive Switching (125°C) VCC = 400V Turn-off Delay Time 40 R G = 5Ω 4 Turn-on Switching Energy (Diode) ns 795 TJ = +25°C 6 Current Rise Time Turn-on Switching Energy 40 R G = 5Ω Eon2 tf VGE = 15V Current Fall Time Turn-on Switching Energy td(off) 29 Turn-off Delay Time Eon1 tr Inductive Switching (25°C) VCC = 400V 5 ns 795 TJ = +125°C 2153 6 µJ 1690 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RΘJC Junction to Case (IGBT) .27 RΘJC Junction to Case (DIODE) N/A Package Weight 29.2 WT UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 050-7426 Rev B 11-2003 APT Reserves the right to change, without notice, the specifications and information contained herein. APT80GP60J TYPICAL PERFORMANCE CURVES 120 80 60 TC=25°C 40 TC=-55°C TC=125°C 20 IC, COLLECTOR CURRENT (A) VGE = 15V. 250µs PULSE TEST