APT80GP60JDQ3

APT80GP60JDQ3 600V TYPICAL PERFORMANCE CURVES APT80GP60JDQ3 ® E E POWER MOS 7 IGBT ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • 100 kHz operation @ 400V, 39A • Low Gate Charge • 50 kHz operation @ 400V, 59A • Ultrafast Tail Current shutoff • SSOA Rated C G ISOTOP ® S OT 22 7 "UL Recognized" file # E145592 C G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT80GP60JDQ3 VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 151 I C2 Continuous Collector Current @ TC = 110°C 68 I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 1 UNIT Volts Amps 330 @ TC = 150°C Switching Safe Operating Area @ TJ = 150°C 330A @ 600V Total Power Dissipation Watts 462 Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1250µA) 600 VGE(TH) Gate Threshold Voltage 3.0 VCE(ON) I CES I GES TYP MAX 4.5 6.0 Collector-Emitter On Voltage (VGE = 15V, I C = 80A, Tj = 25°C) 2.2 2.7 Collector-Emitter On Voltage (VGE = 15V, I C = 80A, Tj = 125°C) 2.1 (VCE = VGE, I C = 2.5mA, Tj = 25°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 1250 2 Gate-Emitter Leakage Current (VGE = ±20V) Volts µA 5500 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Units nA 6-2005 MIN Rev A Characteristic / Test Conditions 050-7442 Symbol DYNAMIC CHARACTERISTICS Symbol APT80GP60JDQ3 Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage 3 Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge SSOA Switching Safe Operating Area td(on) tr td(off) tf Eon1 tf f = 1 MHz 40 Gate Charge 7.5 VGE = 15V 280 TJ = 150°C, R G = 5Ω, VGE = 795 1200 Inductive Switching (125°C) 29 VCC = 400V 40 VGE = 15V 150 RG = 5Ω 85 795 I C = 80A Eon1 Turn-on Switching Energy Eon2 Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy 44 55 µJ 1535 6 Current Fall Time ns 80 TJ = +25°C Turn-off Delay Time nC 115 RG = 5Ω Current Rise Time V A 40 I C = 80A Turn-on Delay Time pF 330 29 5 UNIT 85 VCC = 400V 4 MAX 65 Inductive Switching (25°C) Current Fall Time Turn-off Switching Energy td(off) 735 15V, L = 100µH,VCE = 600V Turn-off Delay Time Eoff tr VGE = 0V, VCE = 25V VGE = 15V Turn-on Switching Energy (Diode) td(on) 9840 I C = 80A Current Rise Time Eon2 TYP Capacitance VCE = 300V Turn-on Delay Time Turn-on Switching Energy MIN TJ = +125°C ns µJ 2155 6 1690 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RθJC Junction to Case (IGBT) .27 RθJC Junction to Case (DIODE) .60 WT VIsolation Package Weight 29.2 RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) 2500 UNIT °C/W gm Volts 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 050-7442 Rev A 6-2005 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. 120 120 100 100 IC, COLLECTOR CURRENT (A) TJ = 25°C 40 TJ = -55°C 20 0 TJ = -55°C TJ = 25°C 100 TJ = 125°C 0 2 3 4 5 6 7 8 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 3.5 IC = 160A 3.0 2.5 TJ = 25°C. 250µs PULSE TEST