APT85GR120B2

APT85GR120B2_L APT85GR120B2 APT85GR120L 1200V, 85A, Vce(on) = 2.5V Typical Ultra Fast NPT - IGBT® The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and ultrafast switching speed. Features • Low Saturation Voltage • Short Circuit Withstand Rated • Low Tail Current • High Frequency Switching • RoHS Compliant • Ultra Low Leakage Current Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is recommended for applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol Parameter Ratings Vces Collector Emitter Voltage 1200 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 170 I C2 Continuous Collector Current @ TC = 100°C 85 I CM Pulsed Collector Current 340 SCWT PD TJ,TSTG TL 1 Unit V A Short Circuit Withstand Time: VCE = 600V, VGE = 15V, TC=125°C 10 μs Total Power Dissipation @ TC = 25°C 962 W Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Min V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA) 1200 VGE(TH) Gate Threshold Voltage VCE(ON) I CES Typ Max 5.0 6.5 Collector-Emitter On Voltage (VGE = 15V, I C = 85A, Tj = 25°C) 2.5 3.2 Collector-Emitter On Voltage (VGE = 15V, I C = 85A, Tj = 125°C) 3.3 Collector-Emitter On Voltage (VGE = 15V, I C = 170A, Tj = 25°C) 3.5 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 10 (VCE = VGE, I C = 2.5mA, Tj = 25°C) 3.5 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) I GES 2 Unit Volts 1000 μA ±250 nA 100 Gate-Emitter Leakage Current (VGE = ±20V) Microsemi Website - http://www.microsemi.com 052-6402 Rev A 8-2012 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. DYNAMIC CHARACTERISTICS Symbol APT85GR120B2_L Parameter Cies Input Capacitance Coes Output Capacitance Test Conditions Cres Reverse Transfer Capacitance VGEP Gate to Emitter Plateau Voltage Qg Total Gate Charge 3 Gate-Emitter Charge Qgc Gate- Collector Charge td(off) tf Capacitance 8400 VGE = 0V, VCE = 25V 725 f = 1MHz 190 Eon2 V 660 60 85 IC = 85A 230 320 Inductive Switching (25°C) 43 Current Rise Time VCC = 600V 70 Turn-Off Delay Time VGE = 15V 300 85 IC = 85A Turn-On Switching Energy RG = 4.3 Ω 6000 9000 Turn-Off Switching Energy TJ = +25°C 3800 5700 td(on) Turn-On Delay Time tr td(off) Eon2 4 Inductive Switching (125°C) 43 Current Rise Time VCC = 600V 70 Turn-Off Delay Time VGE = 15V 350 Current Fall Time tf nC ns Eoff 6 5 Unit pF 490 VCE= 600V Current Fall Time Max 7.5 Gate Charge Turn-On Delay Time tr Typ VGE = 15V Qge td(on) Min μJ ns 95 IC = 85A 5 Turn-On Switching Energy RG = 4.3 Ω Eoff 6 Turn-Off Switching Energy TJ = +125°C 7800 11,700 4900 7350 Typ Max 4 μJ THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic Min RθJC Junction to Case Thermal Resistance (IGBT) .13 RθJA Junction to Ambient Thermal Resistance 40 B2 WT Package Weight L Unit °C/W .22 oz 6 g .36 oz 10 g 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 052-6402 D = 0.9 0.12 0.10 0.7 0.08 0.5 Note: 0.06 P DM ZθJC, THERMAL IMPEDANCE (°C/W) Rev A 8-2012 0.14 0.3 0.04 t1 t2 t Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C 0.1 0.02 0.05 0 10 -5 SINGLE PULSE 10 -4 10-3 10-2 0.1 1 RECTANGULAR PULSE DURATION (SECONDS) Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration TYPICAL PERFORMANCE CURVES APT85GR120B2_L 120 200 V 180 80 60 40 20 = 15V 160 IC, COLLECTOR CURRENT (A) FREQUENCY (kHz) 100 GE TJ= - 55°C 140 TJ= 25°C 120 TJ= 125°C 100 80 TJ= 150°C 60 40 20 80 100 120 140 160 IC(A) FIGURE 2, Max Frequency vs Current (Tcase = 75°C) 300 15V 13V 40 250 10V 200 9.0V 150 8.0V 100 7.5V 50 7V 6.5V 0 0 0 50 4 8 12 16 0 1 2 3 4 5 6 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 3, Saturation Voltage Characteristics (TJ = 25°C) 6 5 4 IC = 85A 3 2 250 200 150 100 TJ= 150°C 50 0 TJ= 125°C TJ= 25°C 0 TJ= -55°C 1 2 3 4 5 6 7 8 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 6, Transfer Characteristics -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (°C) FIGURE 5, On State Voltage vs Junction Temperature 6 TJ = 25°C. 250μs PULSE TEST