APT8M100B
APT8M100S
1000V, 8A, 1.80Ω Max
N-Channel MOSFET
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in flyback, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
TO
-24
7
D 3 PAK
APT8M100B
APT8M100S
D
Single die MOSFET
G
S
TYPICAL APPLICATIONS
FEATURES
• Fast switching with low EMI/RFI
• PFC and other boost converter
• Low RDS(on)
• Buck converter
• Ultra low Crss for improved noise immunity
• Two switch forward (asymmetrical bridge)
• Low gate charge
• Single switch forward
• Avalanche energy rated
• Flyback
• RoHS compliant
• Inverters
Absolute Maximum Ratings
Symbol
ID
Parameter
Unit
Ratings
Continuous Drain Current @ TC = 25°C
8
Continuous Drain Current @ TC = 100°C
5
A
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy 2
415
mJ
IAR
Avalanche Current, Repetitive or Non-Repetitive
4
A
1
27
Thermal and Mechanical Characteristics
Max
Unit
W
PD
Total Power Dissipation @ TC = 25°C
290
RθJC
Junction to Case Thermal Resistance
0.43
RθCS
Case to Sink Thermal Resistance, Flat, Greased Surface
TJ,TSTG
Operating and Storage Junction Temperature Range
TL
Soldering Temperature for 10 Seconds (1.6mm from case)
WT
Package Weight
Torque
Mounting Torque ( TO-247 Package), 6-32 or M3 screw
Microsemi Website - http://www.microsemi.com
0.15
-55
150
300
°C/W
°C
0.22
oz
6.2
g
10
in·lbf
1.1
N·m
6-2011
Typ
Rev C
Min
Characteristic
050-8109
Symbol
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
VBR(DSS)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA
1000
∆VBR(DSS)/∆TJ
Drain-Source On Resistance
VGS(th)
Gate-Source Threshold Voltage
∆VGS(th)/∆TJ
VGS = 10V, ID = 4A
3
Zero Gate Voltage Drain Current
IGSS
Gate-Source Leakage Current
Dynamic Characteristics
VDS = 1000V
VGS = 0V
Forward Transconductance
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Typ
Max
1.15
1.53
4
-10
1.80
5
TJ = 25°C
100
500
±100
TJ = 125°C
VGS = ±30V
Unit
V
V/°C
Ω
V
mV/°C
μA
nA
TJ = 25°C unless otherwise specified
Parameter
gfs
2.5
VGS = VDS, ID = 0.5mA
Threshold Voltage Temperature Coefficient
IDSS
Symbol
Reference to 25°C, ID = 250μA
Breakdown Voltage Temperature Coefficient
RDS(on)
APT8M100B_S
Min
Test Conditions
VDS = 50V, ID = 4A
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr)
4
Effective Output Capacitance, Charge Related
Co(er)
5
Effective Output Capacitance, Energy Related
Typ
7.5
1885
25
160
Max
Unit
S
pF
65
VGS = 0V, VDS = 0V to 667V
33
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(on)
Turn-On Delay Time
Resistive Switching
Current Rise Time
VDD = 667V, ID = 4A
tr
td(off)
tf
Turn-Off Delay Time
60
10
27
8.5
7.8
29
7.2
VGS = 0 to 10V, ID = 4A,
VDS = 500V
RG = 10Ω 6 , VGG = 15V
Current Fall Time
nC
ns
Source-Drain Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
Test Conditions
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
Diode Forward Voltage
ISD = 4A, TJ = 25°C, VGS = 0V
trr
Reverse Recovery Time
ISD = 4A, VDD = 100V 3
Qrr
Reverse Recovery Charge
Peak Recovery dv/dt
Typ
Max
Unit
8
A
G
VSD
dv/dt
Min
D
27
S
diSD/dt = 100A/μs, TJ = 25°C
ISD ≤ 4A, di/dt ≤1000A/μs, VDD = 667V,
TJ = 125°C
1.0
1030
18
V
ns
μC
10
V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 51.88mH, RG = 25Ω, IAS = 4A.
3 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
050-8109
Rev C
6-2011
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -5.47E-8/VDS^2 + 9.66E-9/VDS + 1.87E-11.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
APT8M100B_S
20
V
18
GS
8
= 10V
T = 125°C
J
7
V
TJ = -55°C
14
ID, DRIAN CURRENT (A)
12
10
TJ = 25°C
8
6
4
TJ = 125°C
2
5
4
5V
3
2
1
TJ = 150°C
0
0
5
10
15
20
25
30
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
4.5V
0
NORMALIZED TO
VGS = 10V @ 4A
2.5
1.5
1.0
20
15
TJ = -55°C
TJ = 25°C
10
TJ = 125°C
0
0
-55 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3, RDS(ON) vs Junction Temperature
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
3,000
C, CAPACITANCE (pF)
8
Ciss
1,000
TJ = -55°C
TJ = 25°C
6
TJ = 125°C
4
100
Coss
10
2
0
16
1
2
3
4
ID, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
200
400
600
800
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
12
VDS = 200V
10
VDS = 500V
8
6
VDS = 800V
4
2
0
0
30
ID = 4A
14
0
1
5
10 20
30 40 50 60
70 80
Qg, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
25
20
TJ = 25°C
15
TJ = 150°C
10
6-2011
0
Crss
ISD, REVERSE DRAIN CURRENT (A)
gfs, TRANSCONDUCTANCE
250μSEC. PULSE TEST
@ ID(ON) x RDS(ON) MAX.
25
2.0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
30
ID, DRAIN CURRENT (A)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
Figure 1, Output Characteristics
3.0
= 6, 7, 8 & 9V
GS
5
0
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
Rev C
0
6
050-8109
ID, DRAIN CURRENT (A)
16
APT8M100B_S
50
IDM
10
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
50
13μs
100μs
1
1ms
Rds(on)
10ms
1
Rds(on)
13μs
100μs
1
Scaling for Different Case & Junction
Temperatures:
ID = ID(T = 25°C)*(TJ - TC)/125
DC line
0.1
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
1ms
10ms
100ms
DC line
TJ = 150°C
TC = 25°C
100ms
TJ = 125°C
TC = 75°C
0.1
IDM
10
C
1
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Maximum Forward Safe Operating Area
0.40
D = 0.9
0.7
0.30
Note:
0.5
P DM
0.20
t1
0.3
t2
0.10
0
t1 = Pulse Duration
SINGLE PULSE
t
Duty Factor D = 1 /t2
Peak T J = P DM x Z θJC + T C
0.1
0.05
10-5
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
TO-247 (B) Package Outline
D3PAK Package Outline
e1 SAC: Tin, Silver, Copper
e3 100% Sn Plated
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
Drai n
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drai n
(Heat Sink)
ZθJC, THERMAL IMPEDANCE (°C/W)
0.50
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05(.632)
Revised
4/18/95
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
1.0
13.41 (.528)
13.51(.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022) {3 Plcs}
050-8109
Rev C
6-2011
4.50 (.177) Max.
0.40 (.016)
1.016 (.040)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
2.87 (.113)
3.12 (.123)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters (Inches)
Gate
Drai n
Source
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs. }
Source
Drai n
Gate
Dimensions in Millimeters (Inches)
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
