TYPICAL PERFORMANCE CURVES
APT30GN60BDQ2 APT30GN60BD_SDQ2(G)
APT30GN60SDQ2
APT30GN60BDQ2(G) APT30GN60SDQ2(G)
600V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and a
slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive
design and minimizes losses.
(B)
TO
-2
D3PAK
47
(S)
C
G
G
• 600V Field Stop
•
•
•
•
Trench Gate: Low VCE(on)
Easy Paralleling
6µs Short Circuit Capability
175°C Rated
C
E
E
C
G
E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT30GN60BD_SDQ2(G)
VCES
Collector-Emitter Voltage
600
VGE
Gate-Emitter Voltage
±30
I C1
Continuous Collector Current @ TC = 25°C
63
I C2
Continuous Collector Current @ TC = 110°C
37
I CM
SSOA
PD
TJ,TSTG
TL
Pulsed Collector Current
1
UNIT
Volts
Amps
90
Switching Safe Operating Area @ TJ = 150°C
90A @ 600V
Total Power Dissipation
Watts
203
Operating and Storage Junction Temperature Range
-55 to 175
°C
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
300
STATIC ELECTRICAL CHARACTERISTICS
V(BR)CES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 2mA)
600
VGE(TH)
Gate Threshold Voltage
VCE(ON)
(VCE = VGE, I C = 430µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 125°C)
I CES
I GES
RG(int)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C)
TYP
MAX
5.0
5.8
6.5
1.1
1.5
1.9
50
2
300
N/A
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
µA
TBD
Gate-Emitter Leakage Current (VGE = ±20V)
Intergrated Gate Resistor
Volts
1.7
2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C)
Units
nA
Ω
7-2009
MIN
Rev B
Characteristic / Test Conditions
050-7617
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT30GN60BD_SDQ2(G)
Test Conditions
Characteristic
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VGEP
Gate-to-Emitter Plateau Voltage
Qg
Qge
Qgc
SSOA
SCSOA
Total Gate Charge
1750
VGE = 0V, VCE = 25V
70
f = 1 MHz
50
Gate Charge
9.0
VGE = 15V
165
VCE = 300V
10
I C = 30A
Gate-Collector ("Miller ") Charge
TJ = 150°C, R G = 4.3Ω
Switching Safe Operating Area
VGE =
VCC = 360V, VGE = 15V,
TJ = 150°C, R G = 4.3Ω 7
tr
Current Rise Time
VCC = 400V
14
td(off)
Turn-off Delay Time
VGE = 15V
155
I C = 30A
55
RG = 4.3Ω 7
525
TJ = +25°C
565
Eon2
Turn-on Switching Energy
Turn-on Switching Energy (With Diode)
5
Eoff
Turn-off Switching Energy
td(on)
Turn-on Delay Time
Inductive Switching (125°C)
12
tr
Current Rise Time
VCC = 400V
14
td(off)
Turn-off Delay Time
VGE = 15V
180
I C = 30A
RG = 4.3Ω 7
75
555
TJ = +125°C
950
tf
6
44
Turn-on Switching Energy
Eon2
Turn-on Switching Energy (With Diode)
Eoff
Turn-off Switching Energy
ns
µJ
700
Current Fall Time
Eon1
nC
µs
12
Eon1
V
6
Inductive Switching (25°C)
4
pF
A
Turn-on Delay Time
Current Fall Time
UNIT
90
td(on)
tf
MAX
90
7,
15V, L = 100µH,VCE = 600V
Short Circuit Safe Operating Area
TYP
Capacitance
3
Gate-Emitter Charge
MIN
55
66
ns
µJ
895
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
RθJC
Junction to Case (IGBT)
.74
RθJC
Junction to Case (DIODE)
.67
WT
Package Weight
5.9
UNIT
°C/W
gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and diode leakages
3 See MIL-STD-750 Method 3471.
050-7617
Rev B 7-2009
4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 RG is external gate resistance, not including RGint nor gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
APT30GN60BD_SDQ2(G)
100
90
V
GE
15V
= 15V
13V
12V
TJ = 125°C
40
TJ = 175°C
30
20
11V
60
10V
40
9V
20
8V
10
0
0
0
1
2
3
4
5
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25°C)
TJ = -55°C
70
TJ = 25°C
60
TJ = 125°C
50
TJ = 175°C
40
30
20
10
0
0
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.0
TJ = 25°C.
250µs PULSE TEST
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