APT94N65B2C6

APT97N65B2C6 APT97N65LC6 650V 97A 0.041Ω APT97N65B2C6 COOLMOS Super Junction MOSFET Power Semiconductors T-Max® TO-264 • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated APT97N65LC6 • Extreme dv/dt Rated D G Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. All Ratings per die: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol VDSS ID S Parameter APT97N65B2_LC6 UNIT 650 Volts Drain-Source Voltage Continuous Drain Current @ TC = 25°C 1 97 (assuming Rdson max = 0.041Ω) Amps 62 Continuous Drain Current @ TC = 100°C 2 291 IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±20 Volts PD Total Power Dissipation @ TC = 25°C 862 Watts TJ,TSTG Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy -55 - to 150 °C 260 2 13.4 3 Amps 2.96 ( Id = 13.4A, Vdd = 50V ) 1954 ( Id = 13.4A, Vdd = 50V ) mJ STATIC ELECTRICAL CHARACTERISTICS BV(DSS) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) MIN 4 TYP MAX 650 Volts 0.037 (VGS = 10V, ID = 48.5A) UNIT 0.041 Ohms Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V, TC = 150°C) 250 Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) ±100 nA 3.5 Volts Gate Threshold Voltage (VDS = VGS, ID = 2.96mA) 2.5 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. "COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG." Microsemi Website - http://www.microsemi.com μA 2-2011 Characteristic / Test Conditions 050-7212 Rev A Symbol APT97N65B2_LC6 DYNAMIC CHARACTERISTICS Symbol Characteristic Ciss Test Conditions Input Capacitance Coss Reverse Transfer Capacitance Qg Total Gate Charge 5 Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 6 pF 550 300 50 nC 160 25 60 ns 275 130 2860 INDUCTIVE SWITCHING @ 25°C VDD = 433V, VGS = 15V ID = 97A, RG = 2.2Ω 6 UNIT 7650 INDUCTIVE SWITCHING VGS = 15V VDD = 433V ID = 97A @ 25°C RG = 2.2Ω Turn-off Delay Time MAX 5045 VGS = 10V VDD = 325V ID = 97A @ 25°C Rise Time td(off) TYP VGS = 0V VDS = 25V f = 1 MHz Output Capacitance Crss MIN 3500 μJ 4030 INDUCTIVE SWITCHING @ 125°C VDD = 433V, VGS = 15V ID =97A, RG = 2.2Ω 3695 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX IS Continuous Source Current (Body Diode) 97 ISM Pulsed Source Current 291 VSD Diode Forward Voltage (Body Diode) 2 (VGS = 0V, IS = -48.5A) 4 0.9 UNIT Amps 1.2 Volts 50 V/ns /dt Peak Diode Recovery /dt t rr Reverse Recovery Time (IS = -97A, di/dt = 100A/μs) Tj = 25°C 790 ns Q rr Reverse Recovery Charge (IS = -97A, di/dt = 100A/μs) Tj = 25°C 19 μC IRRM Peak Recovery Current (IS = -97A, di/dt = 100A/μs) Tj = 25°C 43 Amps dv dv 7 THERMAL CHARACTERISTICS Symbol Characteristic RθJC Junction to Case RθJA Junction to Ambient MIN TYP MAX UNIT 0.145 °C/W 40 1 Continuous current limited by package lead temperature. 4 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2% 2 Repetitive Rating: Pulse width limited by maximum junction temperature 5 See MIL-STD-750 Method 3471 3 Repetitive avalanche causes additional power losses that can be calculated as 6 Eon includes diode reverse recovery. PAV = EAR*f . Pulse width tp limited by Tj max. 7 Maximum 125°C diode commutation speed = di/dt 600A/μs Microsemi reserves the right to change, without notice, the specifications and information contained herein. D = 0.9 0.14 0.12 0.7 0.10 0.5 0.08 Note: 0.06 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 050-7212 Rev A 2-2011 0.16 0.3 t1 0.04 t2 0.02 t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0.1 SINGLE PULSE 0.05 0 10 -5 10 -4 10 -3 10-2 0.1 1 RECTANGULAR PULSE DURATION (SECONDS) Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10 APT97N65B2_LC6 Typical Performance Curves 225 15V 200 140 120 7V ID, DRAIN CURRENT (A) 150 6.5V 125 6V 100 75 5.5V 50 5V 25 100 80 60 40 TJ= 125°C 0 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 2, Low Voltage Output Characteristics 2.00 NORMALIZED TO V GS VGS = 20V 8 80 60 40 20 0.40 0 1.15 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 25 50 75 100 125 150 TC, CASE TEMPERATURE (C°) FIGURE 5, Maximum Drain Current vs Case Temperature 3.00 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 1.20 100 150 200 250 ID, DRAIN CURRENT (A) FIGURE 4, RDS(ON) vs Drain Current 0 50 2.50 2.00 1.50 1.00 0.50 0 -50 150 TJ, Junction Temperature (°C) FIGURE 6, Breakdown Voltage vs Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C°) FIGURE 7, On-Resistance vs Temperature 1000 1.20 Rds On ID, DRAIN CURRENT (A) 1.10 1.00 0.90 0.80 100 10µs 10 -50 0 50 100 150 TC, Case Temperature (°C) FIGURE 8, Threshold Voltage vs Temperature 1ms 10ms 100ms 1 0.10 0.70 100µs 1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 9, Maximum Safe Operating Area 2-2011 IDR, REVERSE 0.80 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 1 2 3 4 5 6 7 VGS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 3, Transfer Characteristics 100 ID, DRAIN CURRENT (A) VGS = 10V 1.20 0.85 0 TJ= -55°C = 10V @ 48.5A 1.60 0 TJ= 25°C 20 4.5V 050-7212 Rev A IC, DRAIN CURRENT (A) 175 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) VDS> ID (ON) x RDS (ON)MAX. 250μSEC. PULSE TEST @