APTC60AM45BC1G
Boost chopper & Phase Leg
Super Junction MOSFET
Power Module
5
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Solar converter
6
CR2
8
Q3
CR1
2
1
4
Q2
Q4
11
9
10
Features
CoolMOS™
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
SiC Schottky Diode (CR1)
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
By pass FRED diode (CR2)
12
Benefits
Very low stray inductance
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Pins 7/8 ; 5/6 must be shorted together
All ratings @ Tj = 25°C unless otherwise specified
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1 – 10
APTC60AM45BC1G – Rev 1 October, 2012
7
VDSS = 600V
RDSon = 45m max @ Tj = 25°C
ID = 49A @ Tc = 25°C
APTC60AM45BC1G
1. Phase leg (Q3 & Q4)
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Max ratings
600
49
38
130
±20
45
250
15
3
1900
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Unit
V
A
V
m
W
A
mJ
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
VGS = 0V,VDS = 600V
VGS = 0V,VDS = 600V
Min
Typ
Tj = 25°C
Tj = 125°C
VGS = 10V, ID = 24.5A
VGS = VDS, ID = 3mA
VGS = ±20 V, VDS = 0V
2.1
40
3
Max
250
500
45
3.9
100
Unit
µA
m
V
nA
Dynamic Characteristics
Symbol Characteristic
Ciss
Input Capacitance
Coss
Output Capacitance
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Tf
RthJC
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V ; VDS = 25V
f = 1MHz
Min
Typ
7.2
8.5
Max
Unit
nF
150
VGS = 10V
VBus = 300V
ID = 49A
nC
34
51
21
Inductive Switching (125°C)
VGS = 10V
VBus = 400V
ID = 49A
RG = 5
30
ns
100
45
Junction to Case Thermal Resistance
0.5
°C/W
Source - Drain diode ratings and characteristics
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Min
Tc = 25°C
Tc = 80°C
Typ
49
38
VGS = 0V, IS = - 49A
IS = - 49A
VR = 350V
diS/dt = 100A/µs
Max
Unit
A
1.2
4
V
V/ns
Tj = 25°C
600
ns
Tj = 25°C
17
µC
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS - 49A
di/dt 100A/µs
VR VDSS
Tj 150°C
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2 – 10
APTC60AM45BC1G – Rev 1 October, 2012
Symbol Characteristic
IS
Continuous Source current
(Body diode)
VSD
Diode Forward Voltage
dv/dt Peak Diode Recovery
APTC60AM45BC1G
2. Boost chopper (CR1 & Q2)
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Max ratings
600
49
38
130
±20
45
250
15
3
1900
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Unit
V
A
V
m
W
A
mJ
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
VGS = 0V,VDS = 600V
VGS = 0V,VDS = 600V
Min
Typ
Tj = 25°C
Tj = 125°C
VGS = 10V, ID = 24.5A
VGS = VDS, ID = 3mA
VGS = ±20 V, VDS = 0V
2.1
40
3
Max
250
500
45
3.9
100
Unit
µA
m
V
nA
Dynamic Characteristics
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Tf
Rise Time
Turn-off Delay Time
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
RthJC
Junction to Case Thermal Resistance
Test Conditions
VGS = 0V ; VDS = 25V
f = 1MHz
VGS = 10V
VBus = 300V
ID = 49A
Inductive Switching (125°C)
VGS = 10V
VBus = 400V
ID = 49A
RG = 5
Inductive switching @ 25°C
VGS = 10V ; VBus = 400V
ID = 49A ; RG = 5
Inductive switching @ 125°C
VGS = 10V ; VBus = 400V
ID = 49A ; RG = 5
Min
Typ
7.2
8.5
Max
nF
150
nC
34
51
21
30
ns
100
45
405
µJ
520
660
µJ
635
0.5
www.microsemi.com
Unit
°C/W
3 – 10
APTC60AM45BC1G – Rev 1 October, 2012
Symbol Characteristic
Input Capacitance
Ciss
Coss
Output Capacitance
APTC60AM45BC1G
SiC schottky diode ratings and characteristics (CR1)
Symbol Characteristic
VRRM
Test Conditions
Min
Tj = 25°C
Tj = 175°C
IRM
Maximum Reverse Leakage Current
VR=600V
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 100°C
IF = 10A
Tj = 25°C
Tj = 175°C
VF
Diode Forward Voltage
QC
Total Capacitive Charge
C
Total Capacitance
RthJC
Typ
Max
10
20
10
1.6
2
60
300
600
Maximum Peak Repetitive Reverse Voltage
Unit
V
IF = 10A, VR = 300V
di/dt =500A/µs
14
f = 1MHz, VR = 200V
65
f = 1MHz, VR = 400V
50
Junction to Case Thermal Resistance
µA
A
1.8
2.4
V
nC
pF
2.5
°C/W
Max
Unit
V
3. By pass FRED diode (CR2)
Diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
IRM
IF
Maximum Reverse Leakage Current
Test Conditions
VR=600V
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 30A
VGE = 0V
IF = 30A
VR = 300V
di/dt =1800A/µs
Err
RthJC
Reverse Recovery Energy
Min
600
Typ
Tj = 25°C
Tj = 150°C
Tc = 80°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
100
350
30
1.6
1.5
100
150
1.5
Tj = 150°C
Tj = 25°C
3.1
0.34
Tj = 150°C
0.75
Junction to Case Thermal Resistance
µA
A
2
V
ns
µC
mJ
2.45
°C/W
Max
Unit
V
4. Thermal & Package characteristics
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M4
Min
4000
-40
-40
-40
2
Typ
150*
125
100
3
80
°C
N.m
g
* Tjmax = 175°C for by pass and SiC diode
www.microsemi.com
4 – 10
APTC60AM45BC1G – Rev 1 October, 2012
Symbol
VISOL
TJ
TSTG
TC
Torque
Wt
APTC60AM45BC1G
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
5. Typical CoolMOS Performance Curve (Phase leg)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.6
0.5
0.9
0.4
0.7
0.3
0.5
0.3
0.2
0.1
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Transfert Characteristics
Low Voltage Output Characteristics
140
360
VGS=15&10V
6.5V
280
ID, Drain Current (A)
6V
240
200
5.5V
160
120
5V
80
4.5V
40
4V
0
120
100
80
60
40
TJ=125°C
20
TJ=25°C
0
0
5
10
15
20
VDS, Drain to Source Voltage (V)
25
0
Normalized to
VGS=10V @ 50A
1.2
VGS=10V
1.15
1.1
VGS=20V
1.05
1
0.95
0.9
1
2
3
4
5
6
VGS, Gate to Source Voltage (V)
7
DC Drain Current vs Case Temperature
50
RDS(on) vs Drain Current
1.3
1.25
ID, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
40
30
20
10
0
0
20
40
60
80
100 120 140
25
ID, Drain Current (A)
www.microsemi.com
50
75
100
125
TC, Case Temperature (°C)
150
5 – 10
APTC60AM45BC1G – Rev 1 October, 2012
ID, Drain Current (A)
320
1.1
1.0
0.9
0.8
25
50
75
100
125
150
ON resistance vs Temperature
3.0
2.0
1.5
1.0
0.5
0.0
25
TJ, Junction Temperature (°C)
1.0
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
1000
0.9
0.8
0.7
limited by RDSon
100
100 µs
1 ms
Single pulse
TJ=150°C
TC=25°C
10
0.6
10 ms
1
25
50
75
100
125
150
1
Coss
Ciss
10000
1000
Crss
100
10
0
12
1000
VDS=120V
ID=50A
TJ=25°C
10
VDS=300V
8
VDS=480V
6
4
2
0
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
20
Delay Times vs Current
140
100
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
10
VDS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
C, Capacitance (pF)
50
75
100
125
150
TJ, Junction Temperature (°C)
Maximum Safe Operating Area
Threshold Voltage vs Temperature
1.1
40
60 80 100 120 140 160
Gate Charge (nC)
Rise and Fall times vs Current
70
120
100
VDS=400V
RG=5Ω
TJ=125°C
L=100µH
80
60
40
VDS=400V
RG=5Ω
TJ=125°C
L=100µH
60
td(off)
tr and tf (ns)
td(on) and td(off) (ns)
VGS=10V
ID= 50A
2.5
td(on)
20
50
tf
40
30
tr
20
10
0
0
0
10
20 30 40 50
60 70 80
ID, Drain Current (A)
0
10
20
30
40
50
60
70
80
ID, Drain Current (A)
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6 – 10
APTC60AM45BC1G – Rev 1 October, 2012
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.2
RDS(on), Drain to Source ON resistance
(Normalized)
APTC60AM45BC1G
APTC60AM45BC1G
6. Typical CoolMOS Performance Curve (Boost chopper)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0,6
0,5
D = 0.9
0,4
0,7
0,3
0,5
0,3
0,2
0,1
0,1
Single Pulse
0,05
0
0,00001
0,0001
0,001
0,01
0,1
1
10
rectangular Pulse Duration (Seconds)
Transfert Characteristics
Low Voltage Output Characteristics
140
360
VGS=15&10V
6.5V
280
ID, Drain Current (A)
6V
240
200
5.5V
160
120
5V
80
4.5V
40
4V
100
80
60
40
TJ=125°C
20
0
TJ=25°C
0
0
5
10
15
20
VDS, Drain to Source Voltage (V)
25
0
Normalized to
VGS=10V @ 50A
1,2
VGS=10V
ID, DC Drain Current (A)
1,25
1,15
1,1
1
2
3
4
5
6
VGS, Gate to Source Voltage (V)
VGS=20V
1,05
1
0,95
40
30
20
10
0,9
0
0
20
40
60
80
100 120 140
25
50
75
100
125
TC, Case Temperature (°C)
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1,2
1,1
1,0
0,9
0,8
25
50
75
100
125
150
RDS(on), Drain to Source ON resistance
(Normalized)
ID, Drain Current (A)
150
ON resistance vs Temperature
3,0
VGS=10V
ID= 50A
2,5
2,0
1,5
1,0
0,5
0,0
25
TJ, Junction Temperature (°C)
50
75
100
125
150
TJ, Junction Temperature (°C)
Maximum Safe Operating Area
Threshold Voltage vs Temperature
1,1
1000
1,0
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
7
DC Drain Current vs Case Temperature
50
RDS(on) vs Drain Current
1,3
0,9
0,8
0,7
limited by RDSon
100
100 µs
1 ms
Single pulse
TJ=150°C
TC=25°C
10
0,6
10 ms
1
25
50
75
100
125
150
1
Coss
Ciss
10000
1000
Crss
100
10
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
100
1000
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
10
VDS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
C, Capacitance (pF)
RDS(on) Drain to Source ON Resistance
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
120
12
ID=50A
TJ=25°C
10
VDS=120V
VDS=300V
8
VDS=480V
6
4
2
0
0
www.microsemi.com
20
40
60 80 100 120 140 160
Gate Charge (nC)
7 – 10
APTC60AM45BC1G – Rev 1 October, 2012
ID, Drain Current (A)
320
APTC60AM45BC1G
Delay Times vs Current
140
Rise and Fall times vs Current
70
60
td(off)
100
VDS=400V
RG=5Ω
TJ=125°C
L=100µH
80
60
50
tr and tf (ns)
td(on) and td(off) (ns)
120
40
VDS=400V
RG=5Ω
TJ=125°C
L=100µH
30
tr
20
td(on)
20
10
0
0
10
20 30 40 50
0
60 70 80
0
10
20
ID, Drain Current (A)
1,2
40
50
60
70
80
Switching Energy vs Gate Resistance
2
Eoff
Switching Energy (mJ)
Switching Energy (mJ)
VDS=400V
RG=5Ω
TJ=125°C
L=100µH
30
ID, Drain Current (A)
Switching Energy vs Current
1,6
Eon
0,8
0,4
VDS=400V
ID=50A
TJ=125°C
L=100µH
1,5
Eoff
1
Eon
0,5
0
0
0
10
20 30 40 50 60
ID, Drain Current (A)
70
80
0
IDR, Reverse Drain Current (A)
VDS=400V
D=50%
RG=5Ω
TJ=125°C
TC=75°C
ZVS
200
150
ZCS
100
hard
switching
50
0
5
20
30
40
50
Source to Drain Diode Forward Voltage
1000
Operating Frequency vs Drain Current
250
10
Gate Resistance (Ohms)
300
Frequency (kHz)
tf
40
TJ=150°C
100
TJ=25°C
10
1
0,3
10 15 20 25 30 35 40 45 50
ID, Drain Current (A)
0,5
0,7
0,9
1,1
1,3
1,5
VSD, Source to Drain Voltage (V)
7. SiC Typical Performance Curve (CR1)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
3
2.5
0.9
2
0.7
1.5
0.5
0.3
1
0.1
0.5
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
200
15
TJ=75°C
TJ=175°C
10
TJ=125°C
5
0
0
0.5
1
1.5
2
2.5
3
3.5
TJ=175°C
160
TJ=125°C
120
TJ=75°C
80
TJ=25°C
40
0
200
VF Forward Voltage (V)
300
400 500 600 700
VR Reverse Voltage (V)
800
Capacitance vs.Reverse Voltage
400
C, Capacitance (pF)
350
300
250
200
150
100
50
0
1
10
100
VR Reverse Voltage
1000
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8 – 10
APTC60AM45BC1G – Rev 1 October, 2012
TJ=25°C
IR Reverse Current (µA)
IF Forward Current (A)
Reverse Characteristics
Forward Characteristics
20
APTC60AM45BC1G
8. Typical By pass Performance Curve (CR2)
Forward Characteristic of diode
Energy losses vs Collector Current
60
1
VCE = 300V
VGE = -15V
TJ = 150°C
50
0,75
Err (mJ)
IF (A)
40
30
20
TJ=150°C
0,5
0,25
10
TJ=25°C
0
0
0
0,4
0,8
1,2
1,6
VF (V)
2
0
2,4
10
20
30
40
50
60
IF (A)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
2,5
2
0,9
0,7
1,5
0,5
1
0,3
0,5
0,1
Single Pulse
0,05
0
0,00001
0,0001
0,001
0,01
0,1
1
10
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
www.microsemi.com
9 – 10
APTC60AM45BC1G – Rev 1 October, 2012
Rectangular Pulse Duration in Seconds
APTC60AM45BC1G
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disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
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Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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10 –
APTC60AM45BC1G – Rev 1 October, 2012
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.