APTC60DDAM24T3G

APTC60DDAM24T3G Dual boost chopper Super Junction MOSFET Power Module Application  AC and DC motor control  Switched Mode Power Supplies  Power Factor Correction 13 14 CR1 CR2 22 7 23 8 26 4 27 3 29 15 Features  Super junction MOSFET - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged  Kelvin source for easy drive  Very low stray inductance  Internal thermistor for temperature monitoring Q2 Q1 30 31 32 16 R1 VDSS = 600V RDSon = 24m max @ Tj = 25°C ID = 95A @ Tc = 25°C Benefits  Outstanding performance at high frequency operation  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Solderable terminals both for power and signal for easy PCB mounting  Low profile  Each leg can be easily paralleled to achieve a single Boost of twice the current capability  RoHS Compliant All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … All ratings @ Tj = 25°C unless otherwise specified Absolute maximum ratings (per super junction MOSFET) IDM VGS RDSon PD IAR EAR EAS Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 600 95 70 260 ±20 24 462 15 3 1900 Unit V November, 2017 ID Parameter Drain - Source Voltage A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. www.microsemi.com 1–8 APTC60DDAM24T3G – Rev 2 Symbol VDSS APTC60DDAM24T3G Electrical Characteristics (per super junction MOSFET) Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, VDS = 600V VGS = 10V, ID = 47.5A VGS = VDS, ID = 5mA VGS = ±20 V, VDS = 0V Min Typ 2.1 3 Min Typ 14.4 17 Max 350 24 3.9 200 Unit µA m V nA Dynamic Characteristics (per super junction MOSFET) Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal Resistance Test Conditions VGS = 0V ; VDS = 25V f = 1MHz Max Unit nF 300 VGS = 10V VBus = 300V ID = 95A 68 nC 102 21 Inductive Switching (125°C) VGS = 10V VBus = 400V ID = 95A RG = 2.5 30 ns 100 45 Inductive switching @ 25°C VGS = 10V ; VBus = 400V ID = 95A ; RG = 2.5 Inductive switching @ 125°C VGS = 10V ; VBus = 400V ID = 95A ; RG = 2.5 1350 µJ 1040 2200 µJ 1270 0.27 °C/W Max 600 100 Unit V µA A Chopper diode ratings and characteristics (per diode) Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge RthJC Test Conditions Min Typ VR=600V Tc = 80°C IF = 100A IF = 200A IF = 100A IF = 100A VR = 400V di/dt=200A/µs Junction to Case Thermal Resistance Tj = 125°C 100 1.6 2 1.3 Tj = 25°C 160 Tj = 125°C 220 Tj = 25°C 290 Tj = 125°C 1530 2 V ns nC 0.55 www.microsemi.com November, 2017 VF Characteristic Peak Repetitive Reverse Voltage Reverse Leakage Current DC Forward Current °C/W 2–8 APTC60DDAM24T3G – Rev 2 Symbol VRRM IRM IF APTC60DDAM24T3G Thermal and package characteristics Symbol VISOL TJ TJOP TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature Mounting torque To heatsink M4 Package Weight Min 4000 -40 -40 -40 -40 2 Max 150 TJmax -25 125 125 3 110 Unit V °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT  R25 Typ 50 5 3952 4 Max Unit k % K % T: Thermistor temperature 1  RT: Thermistor value at T   1   exp B25 / 85   T25 T   See application note 1906 - Mounting Instructions for SP3F Power Modules on www.microsemi.com www.microsemi.com 3–8 APTC60DDAM24T3G – Rev 2 November, 2017 Package outline (dimensions in mm) APTC60DDAM24T3G Typical Super junction MOSFET Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 280 720 VGS=15&10V 6.5V 560 ID, Drain Current (A) 6V 480 400 5.5V 320 240 5V 160 4.5V 80 4V 0 200 160 120 80 TJ=125°C 40 TJ=25°C 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 1.2 VGS=10V 1.15 1.1 VGS=20V 1.05 1 0.95 ID, DC Drain Current (A) Normalized to VGS=10V @ 95A 7 DC Drain Current vs Case Temperature 100 RDS(on) vs Drain Current 1.3 1.25 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 0.9 80 60 40 20 November, 2017 0 RDS(on) Drain to Source ON Resistance VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 240 0 0 40 80 120 160 200 240 280 ID, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 4–8 APTC60DDAM24T3G – Rev 2 ID, Drain Current (A) 640 1.2 1.1 1.0 0.9 0.8 25 50 75 100 125 150 ON resistance vs Temperature 3.0 2.0 1.5 1.0 0.5 0.0 25 TJ, Junction Temperature (°C) 1000 1.0 ID, Drain Current (A) 0.9 0.8 0.7 limited by RDSon 100 100 µs 0.6 1 ms Single pulse TJ=150°C TC=25°C 10 10 ms 1 25 50 75 100 125 150 1 Coss Ciss 10000 1000 Crss 100 10 0 100 1000 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 1000000 100000 10 VDS, Drain to Source Voltage (V) TC, Case Temperature (°C) 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 12 ID=95A TJ=25°C 10 VDS=120V VDS=300V 8 VDS=480V 6 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC) November, 2017 VGS(TH), Threshold Voltage (Normalized) 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area Threshold Voltage vs Temperature 1.1 C, Capacitance (pF) VGS=10V ID= 95A 2.5 5–8 APTC60DDAM24T3G – Rev 2 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature RDS(on), Drain to Source ON resistance (Normalized) APTC60DDAM24T3G APTC60DDAM24T3G Delay Times vs Current 140 Rise and Fall times vs Current 70 td(off) 100 VDS=400V RG=2.5Ω TJ=125°C L=100µH 80 60 40 VDS=400V RG=2.5Ω TJ=125°C L=100µH 60 50 tr and tf (ns) 40 30 tr 20 td(on) 20 10 0 0 0 20 40 60 80 100 120 140 160 0 20 40 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy (mJ) Eoff 2 1 3 Eoff Eon 2 1 0 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) 0 Operating Frequency vs Drain Current 250 ZVS 200 ZCS 150 VDS=400V D=50% RG=2.5Ω TJ=125°C TC=75°C 100 hard switching 50 0 10 20 30 40 50 60 70 ID, Drain Current (A) 80 10 15 20 25 Source to Drain Diode Forward Voltage 1000 IDR, Reverse Drain Current (A) 300 5 Gate Resistance (Ohms) 90 TJ=150°C 100 TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 November, 2017 Switching Energy (mJ) Eon VDS=400V ID=95A TJ=125°C L=100µH 4 0 Frequency (kHz) 80 100 120 140 160 5 VDS=400V RG=2.5Ω TJ=125°C L=100µH 3 60 ID, Drain Current (A) Switching Energy vs Current 4 tf VSD, Source to Drain Voltage (V) www.microsemi.com 6–8 APTC60DDAM24T3G – Rev 2 td(on) and td(off) (ns) 120 APTC60DDAM24T3G Typical chopper diode performance curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.9 0.5 0.7 0.4 0.5 0.3 0.2 0.3 0.1 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage trr, Reverse Recovery Time (ns) TJ=125°C 150 TJ=25°C 100 50 0 0.0 0.5 1.0 1.5 2.0 100 A 200 150 50 A 100 50 2.5 0 200 QRR vs. Current Rate Charge 200 A TJ=125°C VR=400V 100 A 50 A 2 1 0 0 200 400 600 800 1000 1200 1000 1200 IRRM vs. Current Rate of Charge 60 200 A TJ=125°C VR=400V 50 100 A 40 50 A 30 20 10 0 0 200 400 -diF/dt (A/µs) 600 800 1000 1200 -diF/dt (A/µs) Capacitance vs. Reverse Voltage Max. Average Forward Current vs. Case Temp. 150 1400 1200 Duty Cycle = 0.5 TJ=175°C 125 1000 IF(AV) (A) C, Capacitance (pF) 400 600 800 -diF/dt (A/µs) 800 600 100 75 50 400 November, 2017 3 IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (µC) VF, Anode to Cathode Voltage (V) 4 TJ=125°C VR=400V 200 A 250 25 200 0 0 1 10 100 1000 VR, Reverse Voltage (V) 25 50 75 100 125 150 175 Case Temperature (°C) www.microsemi.com 7–8 APTC60DDAM24T3G – Rev 2 IF, Forward Current (A) Trr vs. Current Rate of Charge 300 200 APTC60DDAM24T3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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