APTC60DDAM35T3G
VDSS = 600V
RDSon = 35m max @ Tj = 25°C
ID = 72A @ Tc = 25°C
Dual boost chopper
Super Junction MOSFET
Power Module
13 14
CR1
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
CR2
22
7
23
8
Q2
Q1
26
4
27
3
29
15
Features
Super junction MOSFET
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
Internal thermistor for temperature monitoring
30
31
32
R1
16
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a single
boost of twice the current capability
RoHS Compliant
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
All ratings @ Tj = 25°C unless otherwise specified
Absolute maximum ratings (per super junction MOSFET)
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
600
72
54
288
±20
35
416
20
1
1800
Unit
V
November, 2017
ID
Parameter
Drain - Source Voltage
A
V
m
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
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1-7
APTC60DDAM35T3G – Rev 4
Symbol
VDSS
APTC60DDAM35T3G
Electrical Characteristics (per super junction MOSFET)
Symbol
IDSS
RDS(on)
VGS(th)
IGSS
Characteristic
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
VGS = 0V,VDS = 600V
VGS = 10V, ID = 72A
VGS = VDS, ID = 5.4mA
VGS = ±20 V, VDS = 0V
Min
Typ
2.1
3
Min
Typ
14
5.13
0.42
Max
40
35
3.9
±150
Unit
µA
m
V
nA
Max
Unit
Dynamic Characteristics (per super junction MOSFET)
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Tf
Rise Time
Turn-off Delay Time
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
RthJC
Junction to Case Thermal Resistance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
nF
518
VGS = 10V
VBus = 300V
ID = 72A
58
nC
222
21
Inductive Switching @ 125°C
VGS = 15V
VBus = 400V
ID = 72A
RG = 2.5
30
ns
283
84
Inductive switching @ 25°C
VGS = 15V, VBus = 400V
ID = 72A, RG = 2.5Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 400V
ID = 72A, RG = 2.5Ω
1340
µJ
1960
2192
µJ
2412
0.3
°C/W
Max
600
350
Unit
V
µA
A
Chopper diode ratings and characteristics (per diode)
Test Conditions
Typ
VR=600V
IF = 80A
VGE = 0V
Tc = 80°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
80
1.45
1.35
95
Tj = 125°C
115
Tj = 25°C
5.2
Tj = 125°C
8
VF
Diode Forward Voltage
trr
Reverse Recovery Time
IF = 80A
VR = 300V
Qrr
Reverse Recovery Charge
di/dt =4500A/µs
RthJC
Min
Junction to Case Thermal Resistance
V
ns
µC
0.8
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November, 2017
Characteristic
Peak Repetitive Reverse Voltage
Reverse Leakage Current
DC Forward Current
°C/W
2-7
APTC60DDAM35T3G – Rev 4
Symbol
VRRM
IRM
IF
APTC60DDAM35T3G
Thermal and package characteristics
Symbol
VISOL
TJ
TJOP
TSTG
TC
Torque
Wt
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Recommended junction temperature under switching conditions
Storage Temperature Range
Operating Case Temperature
Mounting torque
To heatsink
M4
Package Weight
Min
4000
-40
-40
-40
-40
2
Max
150
TJmax -25
125
125
3
110
Unit
V
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B25/85
∆B/B
Characteristic
Resistance @ 25°C
Min
T25 = 298.15 K
TC=100°C
RT
R 25
Typ
50
5
3952
4
Max
Unit
k
%
K
%
T: Thermistor temperature
1 1 RT: Thermistor value at T
exp B25 / 85
T25 T
See application note 1906 - Mounting Instructions for SP3F Power Modules on www.microsemi.com
www.microsemi.com
3-7
APTC60DDAM35T3G – Rev 4
November, 2017
Package outline (dimensions in mm)
APTC60DDAM35T3G
Typical Super junction MOSFET Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.35
0.3
0.9
0.25
0.7
0.2
0.5
0.15
0.3
0.1
0.1
0.05
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Transfert Characteristics
VGS=15&10V
6.5V
6V
5.5V
5V
4.5V
4V
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
240
200
160
120
80
TJ=125°C
40
TJ=25°C
TJ=-55°C
0
5
10
15
20
VDS, Drain to Source Voltage (V)
25
0
1.05
VGS=10V
VGS=20V
1
7
DC Drain Current vs Case Temperature
80
RDS(on) vs Drain Current
1.1
Normalized to
VGS=10V @ 36A
1
2
3
4
5
6
VGS, Gate to Source Voltage (V)
0.95
0.9
70
60
50
40
30
20
10
20
40
60
80
100
120
ID, Drain Current (A)
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25
50
75
100
125
TC, Case Temperature (°C)
November, 2017
0
0
150
4-7
APTC60DDAM35T3G – Rev 4
0
RDS(on) Drain to Source ON Resistance
ID, Drain Current (A)
280
ID, DC Drain Current (A)
ID, Drain Current (A)
Low Voltage Output Characteristics
400
360
320
280
240
200
160
120
80
40
0
APTC60DDAM35T3G
1.1
1.0
0.9
0.8
0.7
-50 -25
0
25
50
75 100 125 150
ON resistance vs Temperature
RDS(on), Drain to Source ON resistance
(Normalized)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Maximum Safe Operating Area
Threshold Voltage vs Temperature
1000
1.1
ID, Drain Current (A)
1.0
0.9
0.8
0.7
100
1 ms
Single pulse
TJ=150°C
TC=25°C
10
0.6
100 µs
limited by RDSon
10 ms
1
-50 -25
0
25
50
75 100 125 150
1
Ciss
Coss
1000
Crss
100
10
0
100
1000
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
10000
10
VDS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
14
ID=72A
TJ=25°C
12
10
VDS=120V
VDS=300V
8
VDS=480V
6
4
2
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
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0
100
200 300 400
Gate Charge (nC)
500
600
November, 2017
VGS(TH), Threshold Voltage
(Normalized)
1.2
C, Capacitance (pF)
VGS=10V
ID= 72A
5-7
APTC60DDAM35T3G – Rev 4
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.2
APTC60DDAM35T3G
Delay Times vs Current
350
td(off)
300
250
VDS=400V
RG=2.5Ω
TJ=125°C
L=100µH
200
150
100
50
VDS=400V
RG=2.5Ω
TJ=125°C
L=100µH
100
80
tr and tf (ns)
60
40
tr
20
td(on)
0
0
0
20
40
60
80
100
120
0
20
40
ID, Drain Current (A)
Switching Energy (mJ)
120
Eon
VDS=400V
ID=72A
TJ=125°C
L=100µH
8
6
Eoff
Eon
4
2
0
20
40
60
80
100
ID, Drain Current (A)
120
ZCS
ZVS
100
80
VDS=400V
D=50%
RG=2.5Ω
TJ=125°C
TC=75°C
5
10
15
20
25
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
1000
IDR, Reverse Drain Current (A)
120
0
hard
switching
0
TJ=150°C
100
TJ=25°C
10
1
15 20 25 30 35 40 45 50 55 60 65
ID, Drain Current (A)
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0.3
0.5
0.7
0.9
1.1
1.3
1.5
November, 2017
Switching Energy (mJ)
Eoff
Operating Frequency vs Drain Current
Frequency (kHz)
100
Switching Energy vs Gate Resistance
140
20
80
10
VDS=400V
RG=2.5Ω
TJ=125°C
L=100µH
0
40
60
ID, Drain Current (A)
Switching Energy vs Current
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
60
tf
VSD, Source to Drain Voltage (V)
6-7
APTC60DDAM35T3G – Rev 4
td(on) and td(off) (ns)
Rise and Fall times vs Current
120
APTC60DDAM35T3G
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without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
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is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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7-7
APTC60DDAM35T3G – Rev 4
November, 2017
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.