APTC60DSKM24T3G

APTC60DSKM24T3G VDSS = 600V RDSon = 24m max @ Tj = 25°C ID = 95A @ Tc = 25°C Dual buck chopper Super Junction MOSFET Power Module Application  AC and DC motor control  Switched Mode Power Supplies 13 14 Q1 Q2 Features  11 18 22 7 19 10 23 CR1 29 8 30 CR2 31 15 16 R1 28 27 26 25 23 22   32   16 30 15 31 14 32 13 2 3 4 7 Benefits  Outstanding performance at high frequency operation  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Solderable terminals both for power and signal for easy PCB mounting  Low profile  Each leg can be easily paralleled to achieve a single buck of twice the current capability  RoHS Compliant 20 19 18 29 8 - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 600 95 70 260 ±20 24 462 15 3 1900 Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–8 APTC60DSKM24T3G – Rev 1 October, 2012 Symbol VDSS APTC60DSKM24T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Typ Tj = 25°C Tj = 125°C VGS = 10V, ID = 47.5A VGS = VDS, ID = 5mA VGS = ±20 V, VDS = 0V 2.1 3 Min Typ 14.4 17 Max 350 600 24 3.9 200 Unit Max Unit µA m V nA Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V ; VDS = 25V f = 1MHz nF 300 VGS = 10V VBus = 300V ID = 95A nC 68 102 21 Inductive Switching (125°C) VGS = 10V VBus = 400V ID = 95A RG = 2.5 30 ns 100 45 Inductive switching @ 25°C VGS = 10V ; VBus = 400V ID = 95A ; RG = 2.5 Inductive switching @ 125°C VGS = 10V ; VBus = 400V ID = 95A ; RG = 2.5 1350 µJ 1040 2200 µJ 1270 Chopper diode ratings and characteristics IRM IF VF Maximum Reverse Leakage Current Test Conditions VR=600V DC Forward Current Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 100A IF = 200A IF = 100A IF = 100A VR = 400V di/dt=200A/µs www.microsemi.com Min 600 Tj = 25°C Tj = 125°C Tc = 80°C Typ Max 100 500 Tj = 125°C 100 1.6 2 1.3 Tj = 25°C 160 Tj = 125°C 220 Tj = 25°C 290 Tj = 125°C 1530 Unit V µA A 2 V ns nC 2–8 APTC60DSKM24T3G – Rev 1 October, 2012 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTC60DSKM24T3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ Transistor Diode To heatsink M4 Max 0.27 0.55 4000 -40 -40 -40 2 Unit °C/W V 150 125 100 3 110 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT  Typ 50 5 3952 4 Max Unit k % K % R25 T: Thermistor temperature   1 1  RT: Thermistor value at T exp  B25 / 85     T25 T   See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3–8 APTC60DSKM24T3G – Rev 1 October, 2012 SP3 Package outline (dimensions in mm) APTC60DSKM24T3G Typical CoolMOS Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 280 720 VGS=15&10V 6.5V 560 ID, Drain Current (A) 6V 480 400 5.5V 320 240 5V 160 4.5V 80 4V 0 200 160 120 80 TJ=125°C 40 TJ=25°C 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 Normalized to VGS=10V @ 95A 1.25 1.2 VGS=10V 1.15 1.1 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7 DC Drain Current vs Case Temperature 100 RDS(on) vs Drain Current 1.3 VGS=20V 1.05 1 0.95 ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 240 0.9 80 60 40 20 0 0 40 80 120 160 200 240 280 ID, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 4–8 APTC60DSKM24T3G – Rev 1 October, 2012 ID, Drain Current (A) 640 1.1 1.0 0.9 0.8 25 50 75 100 125 150 ON resistance vs Temperature 3.0 2.0 1.5 1.0 0.5 0.0 25 TJ, Junction Temperature (°C) 1000 1.0 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area Threshold Voltage vs Temperature 1.1 0.9 0.8 0.7 limited by RDSon 100 100 µs 1 ms Single pulse TJ=150°C TC=25°C 10 0.6 10 ms 1 25 50 75 100 125 150 1 Coss Ciss 10000 1000 Crss 100 10 0 100 1000 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 1000000 100000 10 VDS, Drain to Source Voltage (V) TC, Case Temperature (°C) C, Capacitance (pF) VGS=10V ID= 95A 2.5 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 12 ID=95A TJ=25°C 10 VDS=120V VDS=300V 8 VDS=480V 6 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC) 5–8 APTC60DSKM24T3G – Rev 1 October, 2012 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTC60DSKM24T3G APTC60DSKM24T3G Delay Times vs Current 140 Rise and Fall times vs Current 70 td(off) 100 VDS=400V RG=2.5Ω TJ=125°C L=100µH 80 60 40 VDS=400V RG=2.5Ω TJ=125°C L=100µH 60 50 tr and tf (ns) 40 30 tr 20 td(on) 20 10 0 0 0 20 40 60 80 100 120 140 160 0 20 40 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy (mJ) Switching Energy (mJ) Eon Eoff 2 1 VDS=400V ID=95A TJ=125°C L=100µH 4 3 Eoff Eon 2 1 0 0 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) 0 ZVS 200 ZCS 150 VDS=400V D=50% RG=2.5Ω TJ=125°C TC=75°C 100 hard switching 50 0 10 20 30 40 50 60 70 ID, Drain Current (A) 80 10 15 20 25 Source to Drain Diode Forward Voltage 1000 IDR, Reverse Drain Current (A) 250 5 Gate Resistance (Ohms) Operating Frequency vs Drain Current 300 Frequency (kHz) 80 100 120 140 160 5 VDS=400V RG=2.5Ω TJ=125°C L=100µH 3 60 ID, Drain Current (A) Switching Energy vs Current 4 tf 90 TJ=150°C 100 TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) www.microsemi.com 6–8 APTC60DSKM24T3G – Rev 1 October, 2012 td(on) and td(off) (ns) 120 APTC60DSKM24T3G Typical chopper diode performance curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.9 0.5 0.7 0.4 0.5 0.3 0.2 0.3 0.1 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage trr, Reverse Recovery Time (ns) TJ=125°C 150 TJ=25°C 100 50 0 0.0 0.5 1.0 1.5 2.0 100 A 200 150 50 A 100 50 2.5 0 200 QRR vs. Current Rate Charge 200 A TJ=125°C VR=400V 3 100 A 50 A 2 1 0 0 200 400 600 800 1000 1200 IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (µC) VF, Anode to Cathode Voltage (V) 4 400 600 800 -diF/dt (A/µs) 1000 1200 IRRM vs. Current Rate of Charge 60 200 A TJ=125°C VR=400V 50 100 A 40 50 A 30 20 10 0 0 200 400 -diF/dt (A/µs) 600 800 1000 1200 -diF/dt (A/µs) Capacitance vs. Reverse Voltage Max. Average Forward Current vs. Case Temp. 150 1400 1200 Duty Cycle = 0.5 TJ=175°C 125 1000 IF(AV) (A) C, Capacitance (pF) TJ=125°C VR=400V 200 A 250 800 600 100 75 50 400 25 200 0 0 1 10 100 1000 VR, Reverse Voltage (V) 25 50 75 100 125 150 175 Case Temperature (°C) “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. www.microsemi.com 7–8 APTC60DSKM24T3G – Rev 1 October, 2012 IF, Forward Current (A) Trr vs. Current Rate of Charge 300 200 APTC60DSKM24T3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi. Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers final application. User or customer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp Life Support Application Seller's Products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the Seller's Product could create a situation where personal injury, death or property damage or loss may occur (collectively "Life Support Applications"). Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations that Seller was negligent regarding the design or manufacture of the goods. www.microsemi.com 8–8 APTC60DSKM24T3G – Rev 1 October, 2012 Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the new proposed specific part. Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Microsemi: APTC60DSKM24T3G