APTC60HM45T1G

APTC60HM45T1G Full - Bridge Super Junction MOSFET Power Module 4 3 Q1 Q3 5 6 2 1 Q2 VDSS = 600V RDSon = 45m max @ Tj = 25°C ID = 49A @ Tc = 25°C Application  Welding converters  Switched Mode Power Supplies  Uninterruptible Power Supplies  Motor control Features  Q4 7 9 8 10  11 NTC 12 Pins 3/4 must be shorted together   - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration Benefits  Outstanding performance at high frequency operation  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Solderable terminals both for power and signal for easy PCB mounting  Low profile  Each leg can be easily paralleled to achieve a phase leg of twice the current capability  RoHS Compliant Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 600 49 38 130 ±20 45 250 15 3 1900 Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTC60HM45T1G – Rev1 October, 2012 Symbol VDSS APTC60HM45T1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Min Typ Tj = 25°C Tj = 125°C VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V VGS = 10V, ID = 24.5A VGS = VDS, ID = 3mA VGS = ±20 V, VDS = 0V 2.1 40 3 Max 250 500 45 3.9 100 Unit Max Unit µA m V nA Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V ; VDS = 25V f = 1MHz Min Typ 7.2 8.5 nF 150 VGS = 10V VBus = 300V ID = 49A nC 34 51 21 Inductive Switching (125°C) VGS = 10V VBus = 400V ID = 49A RG = 5 30 ns 100 45 Inductive switching @ 25°C VGS = 10V ; VBus = 400V ID = 49A ; RG = 5 Inductive switching @ 125°C VGS = 10V ; VBus = 400V ID = 49A ; RG = 5 675 µJ 520 1100 µJ 635 Source - Drain diode ratings and characteristics trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Tc = 25°C Tc = 80°C Typ 49 38 VGS = 0V, IS = - 49A IS = - 49A VR = 350V diS/dt = 100A/µs Max Unit A 1.2 4 V V/ns Tj = 25°C 600 ns Tj = 25°C 17 µC  dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS  - 49A di/dt  100A/µs VR  VDSS Tj  150°C www.microsemi.com 2–7 APTC60HM45T1G – Rev1 October, 2012 Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery  APTC60HM45T1G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 -40 -40 -40 2 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Typ Max 0.5 150 125 100 3 80 Unit °C/W V °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT  Min Typ 50 3952 Max Unit k K R25 T: Thermistor temperature   1 1  RT: Thermistor value at T exp  B25 / 85     T25 T   See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3–7 APTC60HM45T1G – Rev1 October, 2012 SP1 Package outline (dimensions in mm) APTC60HM45T1G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 140 360 VGS=15&10V 6.5V 280 ID, Drain Current (A) 6V 240 200 5.5V 160 120 5V 80 4.5V 40 4V 0 100 80 60 40 TJ=125°C 20 TJ=25°C 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 Normalized to VGS=10V @ 50A 1.25 1.2 VGS=10V 1.15 1.1 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7 DC Drain Current vs Case Temperature 50 RDS(on) vs Drain Current 1.3 VGS=20V 1.05 1 0.95 ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 120 0.9 40 30 20 10 0 0 20 40 60 80 100 120 140 ID, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 4–7 APTC60HM45T1G – Rev1 October, 2012 ID, Drain Current (A) 320 1.1 1.0 0.9 0.8 25 50 75 100 125 150 ON resistance vs Temperature 3.0 2.0 1.5 1.0 0.5 0.0 25 TJ, Junction Temperature (°C) 1000 1.0 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area Threshold Voltage vs Temperature 1.1 0.9 0.8 0.7 limited by RDSon 100 100 µs 1 ms Single pulse TJ=150°C TC=25°C 10 0.6 10 ms 1 25 50 75 100 125 150 1 Coss Ciss 1000 Crss 100 10 0 100 1000 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 10000 10 VDS, Drain to Source Voltage (V) TC, Case Temperature (°C) C, Capacitance (pF) VGS=10V ID= 50A 2.5 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 12 ID=50A TJ=25°C 10 VDS=120V VDS=300V 8 VDS=480V 6 4 2 0 0 20 40 60 80 100 120 140 160 Gate Charge (nC) 5–7 APTC60HM45T1G – Rev1 October, 2012 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTC60HM45T1G APTC60HM45T1G Delay Times vs Current 140 Rise and Fall times vs Current 70 td(off) 100 VDS=400V RG=5Ω TJ=125°C L=100µH 80 60 40 VDS=400V RG=5Ω TJ=125°C L=100µH 60 50 tr and tf (ns) tf 40 30 tr 20 td(on) 20 10 0 0 0 10 20 30 40 50 60 70 80 0 10 20 ID, Drain Current (A) 1.6 Eon 1.2 Eoff 0.8 0.4 VDS=400V ID=50A TJ=125°C L=100µH 2 1.5 60 70 80 Eoff Eon 1 0.5 0 0 0 10 20 30 40 50 60 ID, Drain Current (A) 70 80 0 ZVS 200 ZCS 150 VDS=400V D=50% RG=5Ω TJ=125°C TC=75°C 100 hard switching 50 0 5 20 30 40 50 Source to Drain Diode Forward Voltage 1000 IDR, Reverse Drain Current (A) Operating Frequency vs Drain Current 250 10 Gate Resistance (Ohms) 300 Frequency (kHz) 50 Switching Energy vs Gate Resistance 2.5 Switching Energy (mJ) Switching Energy (mJ) VDS=400V RG=5Ω TJ=125°C L=100µH 40 ID, Drain Current (A) Switching Energy vs Current 2 30 10 15 20 25 30 35 40 45 50 ID, Drain Current (A) TJ=150°C 100 TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. www.microsemi.com 6–7 APTC60HM45T1G – Rev1 October, 2012 td(on) and td(off) (ns) 120 APTC60HM45T1G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi. Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers final application. User or customer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp Life Support Application Seller's Products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the Seller's Product could create a situation where personal injury, death or property damage or loss may occur (collectively "Life Support Applications"). Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations that Seller was negligent regarding the design or manufacture of the goods. www.microsemi.com 7–7 APTC60HM45T1G – Rev1 October, 2012 Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the new proposed specific part.