APTC60HM70RT3G

APTC60HM70RT3G CoolMOS™ : VDSS = 600V RDSon = 70m max @ Tj = 25°C Full bridge + rectifier bridge CoolMOS Power module Application  Solar converter Features  CoolMOS™ - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated     All multiple inputs and outputs must be shorted together 7/24 ; 5/26 Very low stray inductance Kelvin source for easy drive Internal thermistor for temperature monitoring High level of integration Benefits  Optimized conduction & switching losses  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Solderable terminals both for power and signal for easy PCB mounting  Low profile  Easy paralleling due to positive TC of VCEsat  RoHS Compliant All ratings @ Tj = 25°C unless otherwise specified 1. Full bridge Absolute maximum ratings (Per CoolMOS™) ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 600 39 29 160 ±20 70 250 20 1 1800 Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-8 APTC60HM70RT3G – Rev 1 October, 2012 Symbol VDSS APTC60HM70RT3G Electrical Characteristics (Per CoolMOS™) Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Typ Tj = 25°C Tj = 125°C VGS = 10V, ID = 39A VGS = VDS, ID = 2.7mA VGS = ±20 V, VDS = 0V 2.1 3 Min Typ 7 2.56 0.21 Max 25 250 70 3.9 ±100 Unit Max Unit µA m V nA Dynamic Characteristics (Per CoolMOS™) Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 300V ID = 39A Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eoff Turn-off Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal resistance 259 nC 29 111 21 Inductive Switching @ 125°C VGS = 15V VBus = 400V ID = 39A RG = 5 VGS = 15V VBus = 400V ID = 39A RG = 5Ω nF 30 ns 283 84 Tj = 25°C 980 Tj = 125°C 1206 µJ 0.5 °C/W Max Unit Source - Drain diode ratings and characteristics (Per CoolMOS™) Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery  trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Tc = 25°C Tc = 80°C Typ 39 29 VGS = 0V, IS = - 39A IS = - 39A VR = 350V diS/dt = 100A/µs A 1.2 6 V V/ns Tj = 25°C 580 ns Tj = 25°C 23 µC www.microsemi.com 2-8 APTC60HM70RT3G – Rev 1 October, 2012  dv/dt numbers reflect the limitations of the circuit rather than the device itself. di/dt  100A/µs VR  VDSS Tj  150°C IS  - 39A APTC60HM70RT3G 2. Rectifier bridge Absolute maximum ratings (per diode) Symbol VR VRRM IF(AV) IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Duty cycle = 50% Maximum Average Forward Current Non-Repetitive Forward Surge Current 8.3ms Max ratings Unit 600 V 40 320 A TC = 80°C TJ = 45°C Electrical Characteristics (per diode) Symbol Characteristic VF Diode Forward Voltage IRM Maximum Reverse Leakage Current Test Conditions IF = 30A IF = 60A IF = 30A Tj = 125°C Tj = 25°C VR = 600V Tj = 125°C Min Typ 1.8 2.2 1.5 Max 2.2 Unit V 250 500 µA Max Unit Dynamic Characteristics (per diode) Symbol Characteristic Test Conditions trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IF=1A,VR=30V di/dt = 100A/µs IF = 30A VR = 400V di/dt = 200A/µs IRRM Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current RthJC Junction to Case Thermal Resistance IF = 30A VR = 400V Min Tj = 25°C Typ 22 Tj = 25°C 25 Tj = 125°C 160 Tj = 25°C Tj = 125°C 35 480 Tj = 25°C 3 Tj = 125°C 6 Tj = 125°C di/dt = 1000A/µs ns ns nC A 85 ns 920 µC 20 A 1.2 °C/W Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT  R 25 Typ 50 5 3952 4 Max Unit k % K % T: Thermistor temperature   1 1  RT: Thermistor value at T exp B 25 / 85      T25 T  www.microsemi.com 3-8 APTC60HM70RT3G – Rev 1 October, 2012 3. Thermal and package characteristics Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). APTC60HM70RT3G Package characteristics Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Min 4000 -40 -40 -40 2 Typ Max 150 125 100 3 110 Unit V °C N.m g 4. SP3F Package outline (dimensions in mm) www.microsemi.com 4-8 APTC60HM70RT3G – Rev 1 October, 2012 Symbol VISOL TJ TSTG TC Torque Wt APTC60HM70RT3G 5. Full bridge switches curves (Per CoolMOS™) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.5 0.9 0.4 0.7 0.3 0.5 0.3 0.2 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 140 160 VGS=15&10V ID, Drain Current (A) 6.5V 6V 120 5.5V 80 5V 40 4.5V 100 4V 0 5 10 15 20 VDS, Drain to Source Voltage (V) 60 40 TJ=125°C 20 25 TJ=25°C 0 Capacitance vs Drain to Source Voltage Coss 1000 Crss 100 ID, DC Drain Current (A) Ciss 10000 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7 DC Drain Current vs Case Temperature 40 100000 C, Capacitance (pF) 80 0 0 35 30 25 20 15 10 5 0 10 Breakdown Voltage vs Temperature 1.2 1.1 1.0 0.9 0.8 25 25 10 20 30 40 50 VDS, Drain to Source Voltage (V) 50 75 100 125 150 RDS(on), Drain to Source ON resistance (Normalized) 0 BVDSS, Drain to Source Breakdown Voltage (Normalized) VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 120 TJ, Junction Temperature (°C) www.microsemi.com 50 75 100 125 TC, Case Temperature (°C) 150 ON resistance vs Temperature 3.0 VGS=10V ID= 39A 2.5 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 TJ, Junction Temperature (°C) 5-8 APTC60HM70RT3G – Rev 1 October, 2012 ID, Drain Current (A) 200 APTC60HM70RT3G Delay Times vs Current 350 td(off) 300 250 150 80 tr and tf (ns) VDS=400V RG=5Ω TJ=125°C L=100µH 200 100 50 VDS=400V RG=5Ω TJ=125°C L=100µH 100 60 40 tr 20 td(on) 0 0 0 10 20 30 40 50 60 70 0 10 20 ID, Drain Current (A) Switching Energy (mJ) Switching Energy (mJ) 50 60 70 Switching Energy vs Gate Resistance 1.5 Eoff 1 0.5 VDS=400V ID=39A TJ=125°C L=100µH 4 3 Eoff 2 1 0 0 0 10 20 30 40 50 ID, Drain Current (A) 60 70 0 Source to Drain Diode Forward Voltage 1000 Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) VDS=400V D=50% RG=5Ω TJ=125°C TC=75°C 400 300 ZVS 200 100 0 15 20 25 30 ID, Drain Current (A) 0.5 0.7 0.9 1.1 1.3 1.5 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 0.9 0.8 0.7 0.6 100 1 VSD, Source to Drain Voltage (V) 1.0 75 TJ=25°C 10 0.3 Threshold Voltage vs Temperature 50 TJ=150°C 100 35 1.1 25 5 10 15 20 25 30 35 40 45 50 Gate Resistance (Ohms) 500 Frequency (kHz) 40 5 VDS=400V RG=5Ω TJ=125°C L=100µH 2 30 ID, Drain Current (A) Switching Energy vs Current 2.5 VGS(TH), Threshold Voltage (Normalized) tf 125 14 ID=39A TJ=25°C 12 10 150 TC, Case Temperature (°C) www.microsemi.com VDS=120V VDS=300V 8 VDS=480V 6 4 2 0 0 50 100 150 200 Gate Charge (nC) 250 300 6-8 APTC60HM70RT3G – Rev 1 October, 2012 td(on) and td(off) (ns) Rise and Fall times vs Current 120 APTC60HM70RT3G 6. Typical rectifier bridge Performance Curve (per diode) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.4 1.2 D = 0.9 1 0.7 0.8 0.5 0.6 0.3 0.4 0.1 0.05 0.2 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage trr, Reverse Recovery Time (ns) IF, Forward Current (A) Trr vs. Current Rate of Charge 175 60 50 TJ=125°C 40 30 20 TJ=25°C 10 0 0.0 0.5 1.0 1.5 2.0 TJ=125°C VR=400V 150 125 60 A 100 30 A 75 15 A 50 2.5 0 200 TJ=125°C VR=400V 60 A 1.0 30 A 15 A 0.5 0.0 0 200 400 600 800 1000 1200 IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (µC) QRR vs. Current Rate Charge 1.5 400 600 800 1000 1200 -diF/dt (A/µs) VF, Anode to Cathode Voltage (V) -diF/dt (A/µs) IRRM vs. Current Rate of Charge 25 TJ=125°C VR=400V 20 30 A 60 A 15 15 A 10 5 0 0 200 400 600 800 1000 1200 -diF/dt (A/µs) Capacitance vs. Reverse Voltage 200 150 125 100 75 50 25 0 1 10 100 1000 VR, Reverse Voltage (V) “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. www.microsemi.com 7-8 APTC60HM70RT3G – Rev 1 October, 2012 C, Capacitance (pF) 175 APTC60HM70RT3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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