APTC60HM70SCTG

APTC60HM70SCTG VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C ID = 39A @ Tc = 25°C Full – Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies VBUS CR1A CR3A CR1B Q1 CR3B Q3 G3 G1 OUT1 OUT2 S1 CR2A Q2 S3 CR4A CR2B CR4B Q4 G2 G4 S2 S4 NTC1 0/VBUS Features • CoolMOS™ - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • • • • • Kelvin source for easy drive Very low stray inductance Lead frames for power connections Internal thermistor for temperature monitoring High level of integration NTC2 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS compliant All ratings @ Tj = 25°C unless otherwise specified Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 600 39 29 160 ±20 70 250 20 1 1800 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–9 APTC60HM70SCTG – Rev 6 September, 2014 Symbol VDSS APTC60HM70SCTG Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Typ Tj = 25°C Tj = 125°C VGS = 10V, ID = 39A VGS = VDS, ID = 2.7mA VGS = ±20 V, VDS = 0V 2.1 3 Min Typ 7 2.56 0.21 Max 25 250 70 3.9 ±100 Unit Max Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal Resistance Test Conditions VGS = 0V VDS = 25V f = 1MHz nF 259 VGS = 10V VBus = 300V ID = 39A 29 nC 111 21 Inductive Switching @ 125°C VGS = 15V VBus = 400V ID = 39A RG = 5Ω 30 ns 283 84 Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 39A, RG = 5Ω Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 39A, RG = 5Ω 402 µJ 980 658 µJ 1206 0.5 °C/W Max 600 50 Unit V µA A Series diode ratings and characteristics Characteristic Peak Repetitive Reverse Voltage Reverse Leakage Current DC Forward current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Err Reverse Recovery Energy RthJC Test Conditions Min Typ VR=600V IF = 50A VGE = 0V IF = 50A VR = 300V di/dt =1800A/µs Junction to Case Thermal Resistance Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C 50 1.6 1.5 100 Tj = 150°C Tj = 25°C 150 2.6 Tj = 150°C Tj = 25°C Tj = 150°C 5.4 0.60 1.2 2 ns µC mJ 1.42 www.microsemi.com V °C/W 2–9 APTC60HM70SCTG – Rev 6 September, 2014 Symbol VRRM IRM IF APTC60HM70SCTG Parallel diode ratings and characteristics Symbol Characteristic Test Conditions VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage QC Total Capacitive Charge C Total Capacitance RthJC Min 600 Typ Max Tj = 25°C Tj = 175°C Tc = 125°C Tj = 25°C IF = 20A Tj = 175°C IF = 20A, VR = 600V di/dt =800A/µs f = 1MHz, VR = 200V 100 200 20 1.6 2.0 400 2000 f = 1MHz, VR = 400V 100 VR = 600V Unit V µA A 1.8 2.4 56 V nC 130 pF Junction to Case Thermal Resistance 1.5 °C/W Thermal and package characteristics Symbol VISOL TJ TJOP TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature Mounting torque To Heatsink M5 Package Weight Min 4000 -40 -40 -40 -40 2.5 Max Unit V 150 TJmax -25 125 100 4.7 160 N.m g Typ 50 5 3952 4 Unit kΩ % K % °C Temperature sensor NTC (see application note APT0406 on www.microsemi.com). Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = R 25 Max T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T exp⎢ B 25 / 85 ⎜⎜ − ⎟⎟⎥ ⎝ T25 T ⎠⎦⎥ ⎣⎢ www.microsemi.com 3–9 APTC60HM70SCTG – Rev 6 September, 2014 Symbol R25 ∆R25/R25 B25/85 ∆B/B APTC60HM70SCTG SP4 Package outline (dimensions in mm) www.microsemi.com 4–9 APTC60HM70SCTG – Rev 6 September, 2014 See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTC60HM70SCTG Typical CoolMOS Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 140 6.5V 6V 120 5.5V 80 5V 40 4.5V 100 80 60 20 4V 0 0 5 10 15 20 TJ=125°C 40 TJ=25°C 0 25 0 VGS=10V 1.05 VGS=20V 1 0.95 10 20 30 40 50 4 5 6 7 35 30 25 20 15 10 0.9 0 3 DC Drain Current vs Case Temperature 40 RDS (on) vs Drain Current 1.1 Normalized to VGS=10V @ 19.5A 2 VGS , Gate to Source Voltage (V) ID, DC Drain Current (A) RDS (on) Drain to Source ON Resistance VDS , Drain to Source Voltage (V) 1 60 ID, Drain Current (A) 5 0 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com 5–9 APTC60HM70SCTG – Rev 6 September, 2014 160 VDS > I D(on)xR DS(on)MAX 250µs pulse test @ < 0.5 duty cycle 120 VGS=15&10V ID, Drain Current (A) ID, Drain Current (A) 200 1.2 1.1 1.0 0.9 25 50 75 100 125 150 ON resistance vs Temperature 3.0 2.0 1.5 1.0 0.5 25 75 100 125 150 Maximum Safe Operating Area Threshold Voltage vs Temperature 1.1 1000 1.0 ID, Drain Current (A) VGS (TH), Threshold Voltage (Normalized) 50 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 0.9 0.8 0.7 100 50 75 100 125 10 150 Coss 1000 Crss 10 10 20 30 10 ms 1 10 100 1000 40 Gate Charge vs Gate to Source Voltage VGS , Gate to Source Voltage (V) Ciss 0 1 ms VDS, Drain to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 100 Single pulse TJ =150°C TC=25°C 1 TC, Case Temperature (°C) 10000 limited by RDSon 100µs 0.6 25 C, Capacitance (pF) VGS=10V I D= 39A 2.5 12 VDS=120V ID=39A TJ =25°C 10 VDS=300V 8 VDS=480V 6 4 2 0 50 0 50 100 150 200 250 300 Gate Charge (nC) VDS , Drain to Source Voltage (V) www.microsemi.com 6–9 APTC60HM70SCTG – Rev 6 September, 2014 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature RDS (on), Drain to Source ON resistance (Normalized) APTC60HM70SCTG APTC60HM70SCTG Delay Times vs Current 350 td(off) 300 250 VDS=400V RG=5Ω TJ=125°C L=100µH 200 150 100 50 VDS=400V RG=5Ω TJ=125°C L=100µH 100 tr and tf (ns) 80 60 40 tr 20 td(on) 0 0 0 10 20 30 40 50 60 70 0 10 20 ID, Drain Current (A) 2 40 50 60 70 Switching Energy vs Gate Resistance 5 Switching Energy (mJ) Switching Energy (mJ) VDS=400V RG=5Ω TJ=125°C L=100µH 30 ID, Drain Current (A) Switching Energy vs Current 2.5 Eoff 1.5 1 Eon 0.5 VDS=400V ID=39A TJ=125°C L=100µH 4 3 Eoff 2 Eon 1 0 0 0 10 20 30 40 50 ID, Drain Current (A) 60 70 0 Source to Drain Diode Forward Voltage 1000 Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 120 ZCS 100 80 VDS=400V D=50% RG=5Ω TJ=125°C TC=75°C 60 40 20 ZVS Hard switching 0 5 10 15 20 25 30 ID, Drain Current (A) 5 10 15 20 25 30 35 40 45 50 Gate Resistance (Ohms) 140 Frequency (kHz) tf TJ=150°C 100 TJ=25°C 10 35 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) www.microsemi.com 7–9 APTC60HM70SCTG – Rev 6 September, 2014 td(on) and td(off) (ns) Rise and Fall times vs Current 120 APTC60HM70SCTG Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.6 0.9 1.4 1.2 0.7 1 0.5 0.8 0.6 0.3 0.4 0.1 0.2 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) 400 TJ=25°C 35 30 TJ=75°C 25 IR Reverse Current (µA) IF Forward Current (A) Reverse Characteristics Forward Characteristics 40 TJ=175°C 20 TJ=125°C 15 10 5 300 0.5 1 1.5 2 2.5 3 TJ=125°C 250 200 TJ=75°C 150 100 0 0 TJ=175°C 350 3.5 VF Forward Voltage (V) TJ=25°C 50 0 200 300 400 500 600 700 VR Reverse Voltage (V) 800 Capacitance vs.Reverse Voltage 800 C, Capacitance (pF) 700 600 500 400 300 200 0 1 10 100 VR Reverse Voltage 1000 “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. www.microsemi.com 8–9 APTC60HM70SCTG – Rev 6 September, 2014 100 APTC60HM70SCTG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi. Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers final application. User or customer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp Life Support Application Seller's Products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the Seller's Product could create a situation where personal injury, death or property damage or loss may occur (collectively "Life Support Applications"). Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations that Seller was negligent regarding the design or manufacture of the goods. www.microsemi.com 9–9 APTC60HM70SCTG – Rev 6 September, 2014 Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the new proposed specific part.